Effect of Aluminum Doping on Performance of HfO<i><sub>x</sub></i>-Based Flexible Resistive Memory Devices



Paul, AD, Biswas, S, Das, P ORCID: 0000-0003-1147-6541, Edwards, HJ, Dhanak, VR ORCID: 0000-0001-8053-654X and Mahapatra, R
(2020) Effect of Aluminum Doping on Performance of HfO<i><sub>x</sub></i>-Based Flexible Resistive Memory Devices. IEEE TRANSACTIONS ON ELECTRON DEVICES, 67 (10). pp. 4222-4227.

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Abstract

The Al-doped HfOx-based resistive memory devices have been fabricated on indium tin oxide (ITO)-coated polyethylene terephthalate (PET) flexible substrate at room temperature. X-ray photoelectron spectroscopy is used to extract the different doping percentage of Al which allows optimizing the switching performance. It improves the cycle-To-cycle and cell-To-cell uniformity of switching parameters by tuning the oxygen vacancies in HfOx layers. The 7.5% Al-doped HfOx-based flexible resistive memory device shows excellent switching characteristics such as resistance ratio (103) and retention (104 s). There is no degradation of memory window under the mechanical strain with bending radius ranging from 25 to 5 mm. The temperature-dependent resistive switching characteristics have also been studied. There is sufficient memory window (102) till 104 s at elevated temperature. The I -V curve fitting shows the ohmic (hopping) conduction in low resistance state (LRS) and the trap-controlled space charge limited conduction (SCLC) in high resistance state (HRS), supported by Arrhenius plot.

Item Type: Article
Uncontrolled Keywords: Al doping, flexible, HfOx, resistive random access memory (ReRAM)
Depositing User: Symplectic Admin
Date Deposited: 22 Oct 2020 12:38
Last Modified: 10 Oct 2023 13:22
DOI: 10.1109/TED.2020.3015824
Related URLs:
URI: https://livrepository.liverpool.ac.uk/id/eprint/3104888