Temperature dependence of the band gap of GaSb_1-xBi_x alloys with 0 < x ≤ 0.042 determined by photoreflectance

Kopaczek, J, Kudrawiec, R, Linhart, WM, Rajpalke, MK, Yu, KM, Jones, TS, Ashwin, MJ ORCID: 0000-0001-8657-8097, Misiewicz, J and Veal, TD ORCID: 0000-0002-0610-5626 (2013) Temperature dependence of the band gap of GaSb_1-xBi_x alloys with 0 < x ≤ 0.042 determined by photoreflectance. APPLIED PHYSICS LETTERS, 103 (26). 261907-.

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Abstract

<jats:p>GaSb1−xBix layers with 0 &amp;lt; x ≤ 0.042 have been studied by photoreflectance in 15–290 K temperature range. We found that due to the incorporation of Bi atoms into the GaSb host, the E0 band gap-related transition redshifts (∼30 meV per 1% Bi) and significantly broadens. The shift of the E0 transition in the temperature range 10–270 K has been found to be ∼70 meV, very similar to the energy shift in GaSb over the same temperature range. We analyzed the energy and broadening of the E0 transition using the Varshni and Bose-Einstein formulas and found that the Varshni and Bose-Einstein parameters of GaSb1−xBix are similar to those of GaSb. Moreover we concluded that the inhomogeneities in GaSb1−xBix alloys is less important than in dilute bismide arsenides since Bi atoms are more similar to Sb atoms (in electronegativities and ionic sizes).</jats:p>

Item Type:	Article
Divisions:	Faculty of Science and Engineering > School of Physical Sciences
Depositing User:	Symplectic Admin
Date Deposited:	26 Mar 2021 16:42
Last Modified:	15 Mar 2024 09:14
DOI:	10.1063/1.4858967
Related URLs:	Author Publisher
URI:	https://livrepository.liverpool.ac.uk/id/eprint/3118182