Improved resistive switching performance of graphene oxide-based flexible ReRAM with HfOx buffer layer



Maji, S, Paul, AD, Das, P, Chatterjee, S, Chatterjee, P, Dhanak, VR, Chakraborty, AK and Mahapatra, R
(2021) Improved resistive switching performance of graphene oxide-based flexible ReRAM with HfOx buffer layer. Journal of Materials Science: Materials in Electronics, 32 (3). pp. 2936-2945.

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Abstract

Flexible electronic devices have generated large research interest in recent years. Herein, we demonstrate a resistive random access memory (ReRAM) device fabricated on a flexible polyethylene terepthalate (PET) substrate using a bilayer of graphene oxide (GO) and HfOx films. The physical properties of GO and HfOx were characterized by a number of techniques such as X-ray diffraction (XRD), UV–Visible absorption spectroscopy, scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). The GO/HfOx-bilayered ReRAM devices exhibited good switching behavior at low SET/RESET voltages and showed improved cell-to-cell uniformity of switching parameters compared to the devices without HfOx layer, due to the oxygen vacancies within the HfOx film as confirmed by XPS. The switching mechanism was explained by the formation/rupture of the conductive filament through the migration-induced oxidation/reduction reaction of the oxygen vacancies at the interface of GO/HfOx. From the I–V curve fitting, the conduction in low resistance state (LRS) was found to be governed by the Ohmic mechanism and the trap-controlled space charge limited current (SCLC) in high resistance state (HRS) was observed for both the cycles.

Item Type: Article
Uncontrolled Keywords: 40 Engineering, 4016 Materials Engineering, 4018 Nanotechnology
Divisions: Faculty of Science and Engineering > School of Electrical Engineering, Electronics and Computer Science
Faculty of Science and Engineering > School of Physical Sciences
Depositing User: Symplectic Admin
Date Deposited: 12 Apr 2021 10:43
Last Modified: 22 Jun 2024 13:44
DOI: 10.1007/s10854-020-05045-4
Related URLs:
URI: https://livrepository.liverpool.ac.uk/id/eprint/3119047