Monolithic Comparator and Sawtooth Generator of AlGaN/GaN MIS-HEMTs With Threshold Voltage Modulation for High-Temperature Applications



Li, Ang ORCID: 0000-0002-1872-5005, Cui, Miao, Shen, Yi, Li, Ziqian, Liu, Wen, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Wen, Huiqing and Zhao, Cezhou
(2021) Monolithic Comparator and Sawtooth Generator of AlGaN/GaN MIS-HEMTs With Threshold Voltage Modulation for High-Temperature Applications. IEEE TRANSACTIONS ON ELECTRON DEVICES, 68 (6). pp. 2673-2679.

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Abstract

This article demonstrates the integrated comparators, hysteresis comparators, and sawtooth generators based on aluminum-gallium-nitride/gallium-nitride (AlGaN/GaN) metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs). The integrated circuits (ICs) exhibit thermal stability from 25 °C to 250 °C in both static and transient performances. The threshold voltage ( ${V}{_{\text {th}}}$ ) in depletion (D)-mode MIS-HEMT is modulated from -8.9 to -2.4 V to optimize the performance of integrated comparator circuits. The comparator can realize a large and stable comparison range of 3-9 V and a high voltage swing of 9.1 V, while the hysteresis comparator exhibits a good noise-immunity ability and stable hysteresis output. The sawtooth generator with the hysteresis comparator features a high amplitude (6.1 V) sawtooth signal at 500 kHz to realize a compact structure applicable to the high-voltage mixed-signal circuits. These results show the feasibility of MIS-HEMT monolithic comparator circuits in conversion systems.

Item Type: Article
Uncontrolled Keywords: All-GaN circuit, comparator, gallium nitride (GaN), metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs), sawtooth generator, threshold voltage modulation
Divisions: Faculty of Science and Engineering > School of Electrical Engineering, Electronics and Computer Science
Faculty of Science and Engineering > School of Physical Sciences
Depositing User: Symplectic Admin
Date Deposited: 02 Jun 2021 15:09
Last Modified: 15 Mar 2024 03:07
DOI: 10.1109/TED.2021.3075425
Related URLs:
URI: https://livrepository.liverpool.ac.uk/id/eprint/3124904