GaAsSbN for Multi-Junction Solar Cells



Mumtaz, Asim ORCID: 0000-0002-8982-5206, Milanova, Malina, Sandall, Ian ORCID: 0000-0003-3532-0373, Cheetham, Kieran, Cao, Zhongming, Bilton, Matthew ORCID: 0000-0002-0475-2942, Piana, Giacomo, Fleck, Nicole ORCID: 0000-0001-7800-056X, Phillips, Laurie ORCID: 0000-0001-5181-1565, Hutter, Oliver
et al (show 2 more authors) (2020) GaAsSbN for Multi-Junction Solar Cells. In: 2020 IEEE 47th Photovoltaic Specialists Conference (PVSC), 2020-6-15 - 2020-8-21.

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Abstract

Multi-junction solar cells, according to the detailed balance limit, should be able to achieve efficiencies above 50 percent. Work on new materials is necessary for improvements beyond the current state of the art. In this work, we evaluate the use of GaAsSbN, which has shown promise for multi-junction solar cells, particularly targeting the 1eV cell. Epitaxial growth of this material in this work has been achieved via liquid phase epitaxy, as it can produce high quality crystalline layers. We present our initial growth and characterization results of a GaAsSbN layer. Also presented are results showing the incorporation of this material in a solar cell.

Item Type: Conference or Workshop Item (Unspecified)
Uncontrolled Keywords: GaAsSbN, III-V, liquid phase epitaxy, multi-junction solar cells
Divisions: Faculty of Science and Engineering > School of Electrical Engineering, Electronics and Computer Science
Faculty of Science and Engineering > School of Engineering
Faculty of Science and Engineering > School of Physical Sciences
Depositing User: Symplectic Admin
Date Deposited: 07 Jun 2021 15:14
Last Modified: 18 Jan 2023 22:35
DOI: 10.1109/pvsc45281.2020.9300524
Related URLs:
URI: https://livrepository.liverpool.ac.uk/id/eprint/3125478