Impact of AlO<i><sub>y</sub></i> Interfacial Layer on Resistive Switching Performance of Flexible HfO<i><sub>x</sub></i>/AlO<i><sub>y</sub></i> ReRAMs



Biswas, S, Paul, AD, Das, P ORCID: 0000-0003-1147-6541, Tiwary, P, Edwards, HJ, Dhanak, VR ORCID: 0000-0001-8053-654X, Mitrovic, IZ ORCID: 0000-0003-4816-8905 and Mahapatra, R
(2021) Impact of AlO<i><sub>y</sub></i> Interfacial Layer on Resistive Switching Performance of Flexible HfO<i><sub>x</sub></i>/AlO<i><sub>y</sub></i> ReRAMs. IEEE TRANSACTIONS ON ELECTRON DEVICES, 68 (8). pp. 3787-3793.

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Abstract

The Al/HfOx/AlOy/indium tin oxide (ITO)/polyethylene terephthalate (PET) flexible resistive random access memory (ReRAM) device was fabricated at room temperature to study the effect of AlOy interfacial layer on resistive switching (RS). Incorporating the interfacial layer AlOy improves the cycle-to-cycle, cell-to-cell uniformity and switching resistance ratio (>103). It introduces the oxygen vacancies in HfOx which controls the formation and rupture of filament and plays an important role in improving RS characteristics. The device also maintains the stable switching operation under the flexible condition and at elevated temperature up to 100 °C. The device area and temperature-dependent switching characteristics confirm the Ohmic (hopping) conduction in low-resistance state (LRS) and the space charge-limited conduction (SCLC) in high-resistance state (HRS).

Item Type: Article
Uncontrolled Keywords: AlOx, flexible electronics, HfOx, resistive random access memory (ReRAM), resistive switching (RS)
Divisions: Faculty of Science and Engineering > School of Electrical Engineering, Electronics and Computer Science
Depositing User: Symplectic Admin
Date Deposited: 11 Jun 2021 08:32
Last Modified: 15 Mar 2024 03:07
DOI: 10.1109/TED.2021.3084554
Related URLs:
URI: https://livrepository.liverpool.ac.uk/id/eprint/3125961