Voyce, Olivia K, Isaacs, Mark A, Harkness-Brennan, Laura J, Veal, Tim D 
ORCID: 0000-0002-0610-5626, Judson, Dan S, Motakef, Shariar and Datta, Amlan
(2021)
Band offsets of metal oxide contacts on TlBr radiation detectors.
JOURNAL OF APPLIED PHYSICS, 130 (17).
175305-.
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Abstract
<jats:p>Metal oxides are investigated as an alternative to metal contacts on thallium bromide (TlBr) radiation detectors. X-ray photoelectron spectroscopy studies of SnO2/TlBr and ITO/TlBr devices indicate that a type-II staggered heterojunction forms between TlBr and metal oxides upon contacting. By using the Kraut method of valence band offset (VBO) determination, the VBOs of SnO2/TlBr and ITO/TlBr heterojunctions are determined to be 1.05±0.17 and 0.70±0.17 eV, respectively. The corresponding conduction band offsets are then found to be 0.13±0.17 and 0.45±0.17 eV, respectively. The I–V response of symmetric In/SnO2/TlBr and In/ITO/TlBr planar devices is almost Ohmic with a leakage current of less than 2.5 nA at 100 V.</jats:p>
| Item Type: | Article |
|---|---|
| Divisions: | Faculty of Science and Engineering > School of Physical Sciences |
| Depositing User: | Symplectic Admin |
| Date Deposited: | 18 Oct 2021 07:12 |
| Last Modified: | 15 Mar 2024 04:49 |
| DOI: | 10.1063/5.0063365 |
| Open Access URL: | https://aip.scitation.org/doi/10.1063/5.0063365 |
| Related URLs: | |
| URI: | https://livrepository.liverpool.ac.uk/id/eprint/3140747 |
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