A promising method to improve the bias-stress and biased-radiation-stress stabilities of solution-processed AlOx thin films



Fang, Yuxiao, Xu, Wangying, Zhao, Tianshi, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Yang, Li ORCID: 0000-0002-1040-4223, Zhao, Chun and Zhao, Cezhou
(2022) A promising method to improve the bias-stress and biased-radiation-stress stabilities of solution-processed AlOx thin films. Radiation Physics and Chemistry, 192. p. 109899.

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Abstract

The effects of hydrogen peroxide (H2O2) on the device properties and stabilities of solution-processed AlOx metal-oxide-semiconductor capacitors (MOSCAPs) were investigated. It is demonstrated that H2O2 is a strong oxidizer to decompose precursor residuals, reduce oxygen vacancy (Vo) and defects density of solution-processed AlOx thin films. The interface quality and the bias-stress (BS) stability of AlOx MOSCAPs were improved by employing H2O2. Furthermore, through carrying out on-site measurements, 7.5 M H2O2 AlOx MOSCAPs exhibited ignorable radiation-induced oxide traps and interface traps under biased-radiation-stress (BRS) with a total dose up to 42 Gy (SiO2). The 7.5 M H2O2 AlOx MOSCAPs also demonstrate the ability to recover under radiation after the bias was interrupted. The reduced number of Vo and high AlOx concentration of 7.5 M H2O2 AlOx could suppress the radiation-induced trapping/de-trapping behavior among the AlOx bulk and the breaking of Si–H bonds at the AlOx/Si interface. Besides, through biased-illumination-stress (BIS) measurements, the breaking of Si–H bonds under negative biased-radiation-stress (NBRS) was further proved. The results demonstrate that employing H2O2 in the solution-process is simple and effective; it has significant potential to improve the stabilities of large-area electronics for nuclear and aerospace applications.

Item Type: Article
Uncontrolled Keywords: Solution-process, H2O2, High-k gate dielectric, AlOx capacitor, Gamma irradiation, On-site radiation measurements
Divisions: Faculty of Science and Engineering > School of Electrical Engineering, Electronics and Computer Science
Faculty of Science and Engineering > School of Physical Sciences
Depositing User: Symplectic Admin
Date Deposited: 31 Jan 2022 08:24
Last Modified: 18 Jan 2023 21:14
DOI: 10.1016/j.radphyschem.2021.109899
Related URLs:
URI: https://livrepository.liverpool.ac.uk/id/eprint/3147813