E-TCT characterization of a thinned, backside biased, irradiated HV-CMOS pixel test structure



Franks, M, Casse, G ORCID: 0000-0002-8516-237X, Mandic, I, Powell, S, Vilella, E, Vossebeld, J and Wonsak, S ORCID: 0000-0001-6122-2086
(2021) E-TCT characterization of a thinned, backside biased, irradiated HV-CMOS pixel test structure. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 991. p. 164949.

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Abstract

This paper presents the results of edge-Transient Current Technique (e-TCT) measurements of a test structure of a High Voltage CMOS (HV-CMOS) pixel demonstrator, the H35DEMO. Several high resistivity (1000 Ω⋅cm) samples of the device were thinned to 100μm, processed for backside biasing, and irradiated with neutrons to fluences up to 2⋅1016neq⋅cm−2. The evolution of effective doping concentration with respect to fluence is studied. Samples irradiated to a fluence of 5⋅1014neq⋅cm−2 are fully depleted beyond −50V substrate bias voltage while samples irradiated to the highest fluence reach 30 μm depletion at −200V.

Item Type: Article
Uncontrolled Keywords: Particle detector, CMOS, HV-CMOS, e-TCT
Divisions: Faculty of Science and Engineering > School of Physical Sciences
Depositing User: Symplectic Admin
Date Deposited: 04 Feb 2022 10:16
Last Modified: 18 Jan 2023 21:14
DOI: 10.1016/j.nima.2020.164949
Related URLs:
URI: https://livrepository.liverpool.ac.uk/id/eprint/3148193