Franks, M, Casse, G ORCID: 0000-0002-8516-237X, Mandic, I, Powell, S, Vilella, E, Vossebeld, J and Wonsak, S ORCID: 0000-0001-6122-2086
(2021)
E-TCT characterization of a thinned, backside biased, irradiated HV-CMOS pixel test structure.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 991.
p. 164949.
Text
mfranks2020-manuscript-final.pdf - Submitted version Download (7MB) | Preview |
Abstract
This paper presents the results of edge-Transient Current Technique (e-TCT) measurements of a test structure of a High Voltage CMOS (HV-CMOS) pixel demonstrator, the H35DEMO. Several high resistivity (1000 Ω⋅cm) samples of the device were thinned to 100μm, processed for backside biasing, and irradiated with neutrons to fluences up to 2⋅1016neq⋅cm−2. The evolution of effective doping concentration with respect to fluence is studied. Samples irradiated to a fluence of 5⋅1014neq⋅cm−2 are fully depleted beyond −50V substrate bias voltage while samples irradiated to the highest fluence reach 30 μm depletion at −200V.
Item Type: | Article |
---|---|
Uncontrolled Keywords: | Particle detector, CMOS, HV-CMOS, e-TCT |
Divisions: | Faculty of Science and Engineering > School of Physical Sciences |
Depositing User: | Symplectic Admin |
Date Deposited: | 04 Feb 2022 10:16 |
Last Modified: | 18 Jan 2023 21:14 |
DOI: | 10.1016/j.nima.2020.164949 |
Related URLs: | |
URI: | https://livrepository.liverpool.ac.uk/id/eprint/3148193 |