GeSe photovoltaics: doping, interfacial layer and devices

Smiles, Matthew ORCID: 0000-0003-2530-5647, Shalvey, Thomas, Thomas, Luke, Hobson, Theodore DC, Jones, Leanne AH ORCID: 0000-0002-4654-3882, Phillips, Laurie ORCID: 0000-0001-5181-1565, Don, Christopher, Beesley, Thomas, Thakur, Pardeep Kumar, Lee, Tien-Lin
et al (show 3 more authors) (2022) GeSe photovoltaics: doping, interfacial layer and devices. Faraday Discussions, 239. pp. 250-262.

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<jats:p>Germanium selenide (GeSe) bulk crystals, thin films and solar cells are investigated with a focus on acceptor-doping with silver (Ag) and the use of an Sb<jats:sub />2Se<jats:sub />3 interfacial layer. The Ag-doping...</jats:p>

Item Type: Article
Divisions: Faculty of Science and Engineering > School of Physical Sciences
Depositing User: Symplectic Admin
Date Deposited: 19 Apr 2022 09:55
Last Modified: 18 Jan 2023 21:05
DOI: 10.1039/d2fd00048b
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