Edge-TCT evaluation of high voltage-CMOS test structures with unprecedented breakdown voltage for high radiation tolerance



Wade, B ORCID: 0000-0001-9287-7368, Franks, M, Hammerich, J, Karim, N, Powell, S, Vilella, E and Zhang, C ORCID: 0000-0001-6135-3131
(2022) Edge-TCT evaluation of high voltage-CMOS test structures with unprecedented breakdown voltage for high radiation tolerance. .

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Abstract

<jats:title>Abstract</jats:title> <jats:p>This paper presents the edge Transient Current Technique (eTCT) measurements of passive test-structures on the UKRI-MPW0 pixel chip, a 280 µm thick proof-of-concept High Voltage-CMOS (HV-CMOS) device designed and fabricated in the LFoundry 150 nm technology node with a nominal substrate resistivity of 1.9 kΩ cm. Samples were irradiated up to 1 × 10<jats:sup>16</jats:sup> 1 MeV n<jats:sub>eq</jats:sub> cm<jats:sup>−2</jats:sup> with neutrons to observe the change in depletion depth and effective doping concentration with irradiation. A depletion depth of the sensor was found to be ≈50 µm at ≈−400 V at 1 × 10<jats:sup>16</jats:sup> 1 MeV n<jats:sub>eq</jats:sub> cm<jats:sup>−2</jats:sup>. A stable damage introduction rate (<jats:italic>g</jats:italic> <jats:sub> <jats:italic>c</jats:italic> </jats:sub>) was also calculated to be 0.011 ± 0.002 cm<jats:sup>−1</jats:sup>.</jats:p>

Item Type: Conference or Workshop Item (Unspecified)
Uncontrolled Keywords: Particle tracking detectors (Solid-state detectors), Photon detectors for UV, visibleand IR photons (solid-state) (PIN diodes, APDs, Si-PMTs, G-APDs, CCDs, EBCCDs, EMCCDs,CMOS imagers, etc.), Radiation-hard detectors, Solid state detectors
Divisions: Faculty of Science and Engineering > School of Physical Sciences
Depositing User: Symplectic Admin
Date Deposited: 10 Jan 2023 16:16
Last Modified: 01 Feb 2023 00:41
DOI: 10.1088/1748-0221/17/12/C12017
Related URLs:
URI: https://livrepository.liverpool.ac.uk/id/eprint/3166976