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Number of items: 6.


Mitrovic, IZ, Hall, S, Althobaiti, M, Hesp, D, Dhanak, VR, Santoni, A, Weerakkody, AD, Sedghi, N, Chalker, PR, Henkel, C ORCID: 0000-0002-1295-7489
et al (show 5 more authors) (2015) Atomic-layer deposited thulium oxide as a passivation layer on germanium. JOURNAL OF APPLIED PHYSICS, 117 (21).


Gibbon, JT, Jones, L, Roberts, JW, Althobaiti, M, Chalker, PR, Mitrovic, Ivona Z and Dhanak, VR
(2018) Band alignments at Ga 2 O 3 heterojunction interfaces with Si and Ge. AIP Advances, 8 (6). 065011 - 065011.


Gibbon, JT, Jones, L, Roberts, JW, Althobaiti, M, Chalker, PR, Mitrovic, Ivona Z and Dhanak, VR
(2018) Band alignments at Ga2O3 heterojunction interfaces with Si and Ge. AIP ADVANCES, 8 (6).


Mitrovic, IZ, Althobaiti, M, Weerakkody, AD, Dhanak, VR, Linhart, WM, Veal, TD, Sedghi, N, Hall, S, Chalker, PR, Tsoutsou, D
et al (show 1 more authors) (2014) Ge interface engineering using ultra-thin La2O3 and Y2O3 films: A study into the effect of deposition temperature. JOURNAL OF APPLIED PHYSICS, 115 (11).


Althobaiti, M ORCID: 0000-0003-4779-0057, Mather, S, Sedghi, N, Dhanak, VR, Mitrovic, IZ, Hall, S and Chalker, PR
(2015) Hafnia and alumina on sulphur passivated germanium. Vacuum, 122. 306 - 309.


Mitrovic, IZ, Althobaiti, M, Weerakkody, AD, Sedghi, N, Hall, S, Dhanak, VR, Mather, S, Chalker, PR, Tsoutsou, D, Dimoulas, A
et al (show 4 more authors) (2014) Interface Engineering Routes for a Future CMOS Ge-based Technology. DIELECTRICS FOR NANOSYSTEMS 6: MATERIALS SCIENCE, PROCESSING, RELIABILITY, AND MANUFACTURING, 61 (2). 73 - 88.

This list was generated on Sat Dec 8 11:10:56 2018 GMT.