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Number of items: 10.


Linhart, WM, Rajpalke, MK, Buckeridge, J, Murgatroyd, PAE, Bomphrey, JJ, Alaria, J ORCID: 0000-0001-5868-0318, Catlow, CRA, Scanlon, DO, Ashwin, MJ ORCID: 0000-0001-8657-8097 and Veal, TD ORCID: 0000-0002-0610-5626
(2016) Band gap reduction in InN<i><sub>x</sub></i>Sb<sub>1-<i>x</i></sub> alloys: Optical absorption, k . P modeling, and density functional theory. APPLIED PHYSICS LETTERS, 109 (13). p. 132104.


Rajpalke, Mohana, Linhart, Wojciech, Yu, KM, Birkett, Max ORCID: 0000-0002-6076-6820, Alaria, Jonathan ORCID: 0000-0001-5868-0318, Bomphrey, JJ, Sallis, S, Piper, LFJ, Jones, TS, Ashwin, MJ ORCID: 0000-0001-8657-8097
et al (show 1 more authors) (2014) Bi-induced band gap reduction in epitaxial InSbBi alloys. Applied Physics Letters, 105 (21). p. 212101.


Alsawi, A, Sait, CRJ, Hesp, D, Unsworth, P, Ashwin, MJ ORCID: 0000-0001-8657-8097, Dhanak, VR ORCID: 0000-0001-8053-654X, Veal, TD ORCID: 0000-0002-0610-5626 and Weightman, P
(2023) Core hole electron screening in InSb. Journal of Electron Spectroscopy and Related Phenomena, 269. p. 147402.


Rajpalke, MK, Linhart, WM, Birkett, M ORCID: 0000-0002-6076-6820, Yu, KM, Scanlon, DO, Buckeridge, J, Jones, TS, Ashwin, MJ ORCID: 0000-0001-8657-8097 and Veal, TD ORCID: 0000-0002-0610-5626
(2013) Growth and properties of GaSbBi alloys. APPLIED PHYSICS LETTERS, 103 (14). p. 142106.


Segercrantz, N, Slotte, J, Makonnen, I, Tuomisto, F, Sandall, IC ORCID: 0000-0003-3532-0373, Ashwin, MJ ORCID: 0000-0001-8657-8097 and Veal, TD ORCID: 0000-0002-0610-5626
(2017) Hole density and acceptor-type defects in MBE-grown GaSb1-x  Bi x. Journal of Physics D: Applied Physics, 50 (29).


Linhart, WM, Gladysiewicz, M, Kopaczek, J, Rajpalke, MK, Ashwin, MJ ORCID: 0000-0001-8657-8097, Veal, TD ORCID: 0000-0002-0610-5626 and Kudrawiec, R
(2017) Indium-incorporation enhancement of photoluminescence properties of Ga(In) SbBi alloys. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 50 (37). p. 375102.


Linhart, WM, Rajpalke, MK, Birkett, M ORCID: 0000-0002-6076-6820, Walker, D, Ashwin, MJ ORCID: 0000-0001-8657-8097 and Veal, TD ORCID: 0000-0002-0610-5626
(2019) Nitrogen pair-induced temperature insensitivity of the band gap of GaNSb alloys. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 52 (4). 045105-045105.


Kopaczek, J, Rajpalke, MK, Linhart, WM, Jones, TS, Ashwin, MJ ORCID: 0000-0001-8657-8097, Kudrawiec, R and Veal, TD ORCID: 0000-0002-0610-5626
(2014) Photoreflectance spectroscopy of GaInSbBi and AlGaSbBi quaternary alloys. APPLIED PHYSICS LETTERS, 105 (11). 112102-.


Kopaczek, J, Kudrawiec, R, Linhart, WM, Rajpalke, MK, Yu, KM, Jones, TS, Ashwin, MJ ORCID: 0000-0001-8657-8097, Misiewicz, J and Veal, TD ORCID: 0000-0002-0610-5626
(2013) Temperature dependence of the band gap of GaSb<sub>1-x</sub>Bi<sub>x</sub> alloys with 0 &lt; x ≤ 0.042 determined by photoreflectance. APPLIED PHYSICS LETTERS, 103 (26). p. 261907.


Polak, MP, Scharoch, P, Kudrawiec, R, Kopaczek, J, Winiarski, MJ, Linhart, WM, Rajpalke, MK, Yu, KM, Jones, TS, Ashwin, MJ ORCID: 0000-0001-8657-8097
et al (show 1 more authors) (2014) Theoretical and experimental studies of electronic band structure for GaSb<sub>1-x</sub>Bi<sub>x</sub> in the dilute Bi regime. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 47 (35). p. 355107.

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