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Sedghi, N ORCID: 0000-0002-2004-6159, Brunell, I, Potter, R ORCID: 0000-0003-0896-4536, Hall, S ORCID: 0000-0001-8387-1036, Dawson, K ORCID: 0000-0003-3249-8328 and Chalker, PR ORCID: 0000-0002-2295-6332
(2016)
3-bit Multilevel cell switching in nitrogen doped Ta2O5 RRAM.
In: 19th Workshop on Dielectrics in Microelectronics –WODIM, 2016-6-27 - 2016-6-30, Catania,Italy.
Brunell, I, Sedghi, N ORCID: 0000-0002-2004-6159, Dawson, K ORCID: 0000-0003-3249-8328, Hall, S ORCID: 0000-0001-8387-1036 and Chalker, PR ORCID: 0000-0002-2295-6332
(2016)
Enhanced resistive switching of ALD Ta2O5 films via vacancy engineering using fluorine doping.
In: 16th International Atomic Layer Deposition Conference, 2016-7-24 - 2016-7-27, Dublin, Ireland.
Sedghi, N ORCID: 0000-0002-2004-6159, Brunell, I, Potter, R ORCID: 0000-0003-0896-4536, Hall, S ORCID: 0000-0001-8387-1036, Dawson, K ORCID: 0000-0003-3249-8328 and Chalker, PR ORCID: 0000-0002-2295-6332
(2016)
Enhanced switching in Ta2O5 RRAM by fluorine doping.
In: 19th Workshop on Dielectrics in Microelectronics –WODIM, 2016-6-27 - 2016-6-30, Catania, Italk.