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Number of items: 2.
Linhart, WM, Rajpalke, MK, Buckeridge, J, Murgatroyd, PAE, Bomphrey, JJ, Alaria, J 
ORCID: 0000-0001-5868-0318, Catlow, CRA, Scanlon, DO, Ashwin, MJ ORCID: 0000-0001-8657-8097 and Veal, TD ORCID: 0000-0002-0610-5626
(2016)
Band gap reduction in InN<i><sub>x</sub></i>Sb<sub>1-<i>x</i></sub> alloys: Optical absorption, k . P modeling, and density functional theory.
APPLIED PHYSICS LETTERS, 109 (13).
p. 132104.
Buckeridge, J, Veal, TD ORCID: 0000-0002-0610-5626, Catlow, CRA and Scanlon, DO
(2019)
Intrinsic point defects and the <i>n</i>- and <i>p</i>-type dopability of the narrow gap semiconductors GaSb and InSb.
PHYSICAL REVIEW B, 100 (3).