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Supardan, SN, Das, P, Shaw, AP, Major, JD, Valizadeh, R, Hannah, A, Chakraborty, AK, Mahapatra, R, Dhanak, VR and Mitrovic, IZ ORCID: 0000-0003-4816-8905
(2018)
Band alignment of sputtered Al2O3, MgO and ZrO2 on GaN for MIS-HEMTs.
In: UK Nitrides Consortium (UKNC) Winter Conference, 2018-1-10 - 2018-1-11, University of Manchester.
Sawangsri, K, Das, P ORCID: 0000-0003-1147-6541, Supardan, SN, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Hall, S ORCID: 0000-0001-8387-1036, Mahapatra, R, Chakraborty, AK, Treharne, R, Gibbon, J ORCID: 0000-0003-1548-0791, Dhanak, VR et al (show 2 more authors)
(2017)
Experimental band alignment of Ta2O5/GaN for MIS-HEMT applications.
In: 20th Conference on "Insulating Films on Semiconductors", 2017-6-27 - 2017-6-30, Potsdam, Germany.
Sawangsri, K, Das, P ORCID: 0000-0003-1147-6541, Supardan, SN, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Hall, S ORCID: 0000-0001-8387-1036, Mahapatra, R, Chakraborty, AK, Treharne, R, Gibbon, J ORCID: 0000-0003-1548-0791, Dhanak, VR et al (show 2 more authors)
(2017)
Experimental band alignment of Ta2O5/GaN for MIS-HEMT applications.
Microelectronic Engineering, 178.
pp. 178-181.
Maji, S, Paul, AD, Das, P ORCID: 0000-0003-1147-6541, Chatterjee, S, Chatterjee, P, Dhanak, VR, Chakraborty, AK and Mahapatra, R
(2021)
Improved resistive switching performance of graphene oxide-based flexible ReRAM with HfOx buffer layer.
Journal of Materials Science: Materials in Electronics, 32 (3).
pp. 2936-2945.
Supardan, SN, Das, P, Shaw, AP, Major, JD ORCID: 0000-0002-5554-1985, Valizadeh, R, Hannah, A, Chakraborty, AK, Mahapatra, R, Hall, S ORCID: 0000-0001-8387-1036, Dhanak, VR et al (show 1 more authors)
(2018)
Sputtered ZrO2, Al2O3 and MgO on GaN: band alignment and interface study.
In: 20th Workshop on Dielectrics in Microelectronics - Wodim 2018, 2018-6-11 - 2018-6-14, Berlin, Germany.