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Sedghi, N ORCID: 0000-0002-2004-6159, Brunell, I, Potter, R ORCID: 0000-0003-0896-4536, Hall, S ORCID: 0000-0001-8387-1036, Dawson, K ORCID: 0000-0003-3249-8328 and Chalker, PR ORCID: 0000-0002-2295-6332 (2016) 3-bit Multilevel cell switching in nitrogen doped Ta2O5 RRAM. In: 19th Workshop on Dielectrics in Microelectronics –WODIM, 2016-6-27 - 2016-6-30, Catania,Italy.

Jones, L ORCID: 0000-0002-4654-3882, Gibbon, JT ORCID: 0000-0003-1548-0791, Roberts, JW, Cho, SJ, Thayne, IG, Chalker, PR ORCID: 0000-0002-2295-6332, Dhanak, VR and Mitrovic, IZ ORCID: 0000-0003-4816-8905 (2018) Aluminium doped Ga2O3 for GaN MIS-HEMTs. In: 20th Workshop on Dielectrics in Microelectronics – WODIM 2018, 2018-6-11 - 2018-6-14, Berlin, Germany.

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Moloney, J, Tesh, O, Singh, M, Roberts, JW, Jarman, JC, Lee, LC, Huq, TN, Brister, J, Karboyan, S, Kuball, M et al (show 3 more authors) , Chalker, PR ORCID: 0000-0002-2295-6332, Oliver, RA and Massabuau, FC-P (2019) Atomic layer deposited α-Ga₂O₃ solar-blind photodetectors. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 52 (47). p. 475101.

Shaw, A, Wrench, JS, Jin, JD, Whittles, TJ ORCID: 0000-0002-5154-7511, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Raja, M, Dhanak, VR, Chalker, PR ORCID: 0000-0002-2295-6332 and Hall, S ORCID: 0000-0001-8387-1036 (2016) Atomic layer deposition of Nb-doped ZnO for thin film transistors. APPLIED PHYSICS LETTERS, 109 (22). p. 222103.

Gibbon, JT ORCID: 0000-0003-1548-0791, Jones, L ORCID: 0000-0002-4654-3882, Roberts, JW, Althobaiti, M, Chalker, PR ORCID: 0000-0002-2295-6332, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905 and Dhanak, VR ORCID: 0000-0001-8053-654X (2018) Band alignments at Ga2O3 heterojunction interfaces with Si and Ge. AIP Advances, 8 (6). 065011-065011.

Gibbon, JT ORCID: 0000-0003-1548-0791, Jones, L ORCID: 0000-0002-4654-3882, Roberts, JW, Althobaiti, M, Chalker, PR ORCID: 0000-0002-2295-6332, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905 and Dhanak, VR ORCID: 0000-0001-8053-654X (2018) Band alignments at Ga₂O₃ heterojunction interfaces with Si and Ge. AIP ADVANCES, 8 (6).

Partida-Manzanera, T, Zaidi, ZH, Roberts, JW, Dolmanan, SB, Lee, KB, Houston, PA, Chalker, PR ORCID: 0000-0002-2295-6332, Tripathy, S and Potter, RJ ORCID: 0000-0003-0896-4536 (2019) Comparison of atomic layer deposited Al₂O₃ and (Ta₂O₅)_0.12(Al₂O₃)_0.88 gate dielectrics on the characteristics of GaN-capped AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors. JOURNAL OF APPLIED PHYSICS, 126 (3). 034102-034102.

Wrench, JS, Brunell, IF, Chalker, PR ORCID: 0000-0002-2295-6332, Jin, JD, Shaw, A, Mitrovic, IZ ORCID: 0000-0003-4816-8905 and Hall, S ORCID: 0000-0001-8387-1036 (2014) Compositional tuning of atomic layer deposited MgZnO for thin film transistors. APPLIED PHYSICS LETTERS, 105 (20). pp. 1-202109.

Shaw, A, Jin, JD, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Hall, S ORCID: 0000-0001-8387-1036, Wrench, JS and Chalker, PR ORCID: 0000-0002-2295-6332 (2016) Controlling the physical and electrical properties of ALD grown ZnO using Nb as a dopant. In: 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2016-1-25 - 2016-1-27.

Sedghi, N ORCID: 0000-0002-2004-6159, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Ralph, JF ORCID: 0000-0002-4946-9948, Chalker, PR ORCID: 0000-0002-2295-6332 and Hall, S ORCID: 0000-0001-8387-1036 (2016) Design of an All-Dielectric Double Barrier Resonant Tunneling Diode for THz Energy Harvesting. In: 3rd International Conference on Nanotechnology, Nanomaterials & Thin Films for Energy Applications - Nanoenergy 2016, 2016-7-27 - 2016-7-29, Liverpool, UK.

Mu, Y, Zhao, CZ, Lu, Q, Zhao, C, Qi, Y, Lam, S, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Taylor, S ORCID: 0000-0002-2144-8459 and Chalker, PR ORCID: 0000-0002-2295-6332 (2017) Effects of biased irradiation on charge trapping in HfO<inf>2</inf> dielectric thin films. In: INTERNATIONAL CONFERENCE “FUNCTIONAL ANALYSIS IN INTERDISCIPLINARY APPLICATIONS” (FAIA2017).

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Zaidi, ZH, Lee, KB, Roberts, JW, Guiney, I, Qian, H, Jiang, S, Cheong, JS, Li, P, Wallis, DJ, Humphreys, CJ et al (show 2 more authors) , Chalker, PR ORCID: 0000-0002-2295-6332 and Houston, PA (2018) Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs. JOURNAL OF APPLIED PHYSICS, 123 (18). p. 184503.

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Sedghi, N ORCID: 0000-0002-2004-6159, Li, H, Brunell, IF, Dawson, K ORCID: 0000-0003-3249-8328, Guo, Y, Potter, RJ ORCID: 0000-0003-0896-4536, Gibbon, JT ORCID: 0000-0003-1548-0791, Dhanak, VR, Zhang, WD, Zhang, JF et al (show 3 more authors) , Hall, S ORCID: 0000-0001-8387-1036, Robertson, J and Chalker, PR ORCID: 0000-0002-2295-6332 (2017) Enhanced Switching Stability in Ta2O5 Resistive RAM by Fluorine Doping. Applied Physics Letters, 111 (9). 092904-092904.

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Weerakkody, AD, Sedghi, N ORCID: 0000-0002-2004-6159, Mitrovic, IZ ORCID: 0000-0003-4816-8905, van Zalinge, H ORCID: 0000-0003-0996-1281, Noureddine, I Nemr, Hall, S ORCID: 0000-0001-8387-1036, Wrench, JS, Chalker, PR, Phillips, LJ ORCID: 0000-0001-5181-1565, Treharne, R et al (show 1 more authors) and Durose, K ORCID: 0000-0003-1183-3211 (2015) Enhanced low voltage nonlinearity in resonant tunneling metal-insulator-insulator-metal nanostructures. MICROELECTRONIC ENGINEERING, 147. pp. 298-301.

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Weerakkody, AD, Sedghi, N ORCID: 0000-0002-2004-6159, Mitrovic, IZ ORCID: 0000-0003-4816-8905, van Zalinge, H ORCID: 0000-0003-0996-1281, Nemr Noureddine, I, Hall, S ORCID: 0000-0001-8387-1036, Wrench, JS, Chalker, PR ORCID: 0000-0002-2295-6332, Phillips, LJ ORCID: 0000-0001-5181-1565, Treharne, R et al (show 1 more authors) and Durose, K ORCID: 0000-0003-1183-3211 (2015) Enhanced low voltage nonlinearity in resonant tunneling metal–insulator–insulator–metal nanostructures. , University of Leeds, Leeds, UK.

Brunell, I, Sedghi, N ORCID: 0000-0002-2004-6159, Dawson, K ORCID: 0000-0003-3249-8328, Hall, S ORCID: 0000-0001-8387-1036 and Chalker, PR ORCID: 0000-0002-2295-6332 (2016) Enhanced resistive switching of ALD Ta2O5 films via vacancy engineering using fluorine doping. In: 16th International Atomic Layer Deposition Conference, 2016-7-24 - 2016-7-27, Dublin, Ireland.

Sedghi, N ORCID: 0000-0002-2004-6159, Brunell, I, Potter, R ORCID: 0000-0003-0896-4536, Hall, S ORCID: 0000-0001-8387-1036, Dawson, K ORCID: 0000-0003-3249-8328 and Chalker, PR ORCID: 0000-0002-2295-6332 (2016) Enhanced switching in Ta2O5 RRAM by fluorine doping. In: 19th Workshop on Dielectrics in Microelectronics –WODIM, 2016-6-27 - 2016-6-30, Catania, Italk.

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Sawangsri, K, Das, P ORCID: 0000-0003-1147-6541, Supardan, SN, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Hall, S ORCID: 0000-0001-8387-1036, Mahapatra, R, Chakraborty, AK, Treharne, R, Gibbon, J ORCID: 0000-0003-1548-0791, Dhanak, VR et al (show 2 more authors) , Durose, K ORCID: 0000-0003-1183-3211 and Chalker, PR ORCID: 0000-0002-2295-6332 (2017) Experimental band alignment of Ta2O5/GaN for MIS-HEMT applications. Microelectronic Engineering, 178. pp. 178-181.

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Sawangsri, K, Das, P ORCID: 0000-0003-1147-6541, Supardan, SN, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Hall, S ORCID: 0000-0001-8387-1036, Mahapatra, R, Chakraborty, AK, Treharne, R, Gibbon, J ORCID: 0000-0003-1548-0791, Dhanak, VR ORCID: 0000-0001-8053-654X et al (show 2 more authors) , Durose, K ORCID: 0000-0003-1183-3211 and Chalker, PR ORCID: 0000-0002-2295-6332 (2017) Experimental band alignment of Ta₂O₅/GaN for MIS-HEMT applications. In: 20th Conference on "Insulating Films on Semiconductors", 2017-6-27 - 2017-6-30, Potsdam, Germany.

Weerakkody, DAD, Sedghi, N ORCID: 0000-0002-2004-6159, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Hall, S ORCID: 0000-0001-8387-1036, Wrench, J, Chalker, PR ORCID: 0000-0002-2295-6332, Zhenhua, L and Beeby, S (2016) Experimental tunnel-barrier rectifiers for IR energy harvesting. In: 3rd International Conference on Nanotechnology, Nanomaterials & Thin Films for Energy Applications - NANOENERGY 2016, 2016-7-27 - 2016-7-29, University of Liverpool.

Shaw, A, Jin, JD, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Hall, S ORCID: 0000-0001-8387-1036, Wrench, JS and Chalker, PR ORCID: 0000-0002-2295-6332 (2017) Extraction of the sub-band gap density of states of Nb doped ZnO thin film transistors using <i>C</i>-<i>V</i> measurements. In: 20th Conference on "Insulating Films on Semiconductors", 2017-6-27 - 2017-6-30, Potsdam, Germany.

Shaw, A, Jin, JD, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Hall, S ORCID: 0000-0001-8387-1036, Wrench, JS and Chalker, PR ORCID: 0000-0002-2295-6332 (2017) Extraction of the sub-band gap density of states of Nb doped ZnO thin film transistors using C-V measurements. Microelectronic Engineering, 178. pp. 213-216.

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Mitrovic, IZ ORCID: 0000-0003-4816-8905, Althobaiti, M, Weerakkody, AD, Dhanak, VR ORCID: 0000-0001-8053-654X, Linhart, WM, Veal, TD ORCID: 0000-0002-0610-5626, Sedghi, N ORCID: 0000-0002-2004-6159, Hall, S ORCID: 0000-0001-8387-1036, Chalker, PR ORCID: 0000-0002-2295-6332, Tsoutsou, D et al (show 1 more authors) and Dimoulas, A (2014) Ge interface engineering using ultra-thin La2O3 and Y2O3 films: A study into the effect of deposition temperature. Journal of Applied Physics, 115 (11). 114102: 1-16.

Althobaiti, M ORCID: 0000-0003-4779-0057, Mather, S, Sedghi, N ORCID: 0000-0002-2004-6159, Dhanak, VR, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Hall, S ORCID: 0000-0001-8387-1036 and Chalker, PR ORCID: 0000-0002-2295-6332 (2015) Hafnia and alumina on sulphur passivated germanium. Vacuum, 122. pp. 306-309.

Mather, S (2017) Hafnium Oxide Based Gate Stacks on Germanium and Silicon. PhD thesis, University of Liverpool.

King, Peter Hafnium oxide-based dielectrics by atomic layer deposition. Doctor of Philosophy thesis, University of Liverpool.

Nicol, D, Oshima, Y, Roberts, JW, Penman, L, Cameron, D, Chalker, PR ORCID: 0000-0002-2295-6332, Martin, RW and Massabuau, FC-P (2023) Hydrogen-related 3.8 eV UV luminescence in <i>α</i>-Ga₂O₃. APPLIED PHYSICS LETTERS, 122 (6). 062102-062102.

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Mitrovic, IZ ORCID: 0000-0003-4816-8905, Althobaiti, M, Weerakkody, AD, Sedghi, N ORCID: 0000-0002-2004-6159, Hall, S ORCID: 0000-0001-8387-1036, Dhanak, VR, Mather, S, Chalker, PR ORCID: 0000-0002-2295-6332, Tsoutsou, D, Dimoulas, A et al (show 4 more authors) , Henkel, C, Litta, E Dentoni, Hellstrom, P-E and Ostling, M (2014) Interface Engineering Routes for a Future CMOS Ge-based Technology. DIELECTRICS FOR NANOSYSTEMS 6: MATERIALS SCIENCE, PROCESSING, RELIABILITY, AND MANUFACTURING, 61 (2). pp. 73-88.

Lu, Q, Mu, Y, Zhao, Y, Zhao, CZ, Taylor, S ORCID: 0000-0002-2144-8459 and Chalker, PR (2017) Investigation of the electrical performance of hfo₂ dielectrics deposited on passivated germanium substrates. .

Sedghi, N ORCID: 0000-0002-2004-6159, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Ralph, JF ORCID: 0000-0002-4946-9948, Chalker, PR ORCID: 0000-0002-2295-6332 and Hall, S ORCID: 0000-0001-8387-1036 (2016) Low Voltage Rectification in Resonant Tunneling Diodes for Use in THz Energy Harvesting. In: 3rd International Conference on Nanotechnology, Nanomaterials & Thin Films for Energy Applications - Nanoenergy 2016, 2016-7-27 - 2016-7-29, Liverpool University.

Roberts, JW, Chalker, PR ORCID: 0000-0002-2295-6332, Ding, B, Oliver, RA, Gibbon, JT, Jones, LAH ORCID: 0000-0002-4654-3882, Dhanak, VR, Phillips, LJ ORCID: 0000-0001-5181-1565, Major, JD ORCID: 0000-0002-5554-1985 and Massabuau, FC-P (2019) Low temperature growth and optical properties of alpha-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition. JOURNAL OF CRYSTAL GROWTH, 528. p. 125254.

Garmendia, X, Chalker, S ORCID: 0000-0002-8855-2680, Bilton, M ORCID: 0000-0002-0475-2942, Sutcliffe, CJ and Chalker, PR ORCID: 0000-0002-2295-6332 (2020) Microstructure and mechanical properties of Cu-modified AlSi10Mg fabricated by Laser-Powder Bed Fusion. Materialia, 9. p. 100590.

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Cui, Miao, Bu, Qinglei, Cai, Yutao, Sun, Ruize, Liu, Wen, Wen, Huiqing, Lam, Sang, Liang, Yung C, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Taylor, Stephen ORCID: 0000-0002-2144-8459 et al (show 2 more authors) , Chalker, PR ORCID: 0000-0002-2295-6332 and Zhao, Cezhou (2019) Monolithic Integration Design of GaN-based Power Chip Including Gate Driver for High-Temperature DC-DC Converters. Japanese Journal of Applied Physics, 58 (5). 056505-056505.

Wrench, JS, Chalker, PR ORCID: 0000-0002-2295-6332, Jin, J, Shaw, AS, Mitrovic, IZ ORCID: 0000-0003-4816-8905 and Hall, S ORCID: 0000-0001-8387-1036 (2016) Nb doped ZnO with enhanced physical and electrical properties for TFTs. In: 16th International Atomic Layer Deposition Conference, 2016-7-24 - 2016-7-27, Dublin, Ireland.

Chalker, PR ORCID: 0000-0002-2295-6332 (2016) Photochemical atomic layer deposition and etching. SURFACE & COATINGS TECHNOLOGY, 291. pp. 258-263.

Shaw, A, Whittles, TJ ORCID: 0000-0002-5154-7511, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Jin, JD, Wrench, JS, Hesp, D, Dhanak, VR, Chalker, PR ORCID: 0000-0002-2295-6332 and Hall, S ORCID: 0000-0001-8387-1036 (2015) Physical and Electrical Characterization of Mg-Doped ZnO Thin-Film Transistors. In: ESSDERC 2015 - 45th European Solid-State Device Research Conference, 2015-9-14 - 2015-9-18, Graz, Austria.

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Massabuau, Fabien, Roberts, JW, Nicol, D, Edwards, PR, McLelland, M, Dallas, GL, Hunter, DA, Nicolson, EA, Jarman, JC, Kovacs, A et al (show 3 more authors) , Martin, RW, Oliver, RA and Chalker, PR ORCID: 0000-0002-2295-6332 (2021) Progress in atomic layer deposited [alpha]-Ga2O3 materials and solar-blind detectors. In: Oxide-based Materials and Devices XII, 2021-3-6 - 2021-3-12.

Mu, Y, Zhao, CZ, Qi, Y, Lam, S, Zhao, C, Lu, Q, Cai, Y, Mitrovic, IZ, Taylor, S and Chalker, PR (2016) Real-time and on-site γ-ray radiation response testing system for semiconductor devices and its applications. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 372. 14 - 28. ISSN 0168-583X

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Gottlob, HDB, Schmidt, M, Stefani, A, Lemme, MC, Kurz, H, Mitrovic, Ivona, Davey, WM, Hall, S, Wener, M, Chalker, PR et al (show 5 more authors) , Cherkaoui, K, Hurley, PK, Piscator, J, Engstrom, O and Newcomb, SB (2009) 'Scaling potential and MOSFET integration of thermally stable Gd silicate dielectrics'. In: INFOS, Clare College.

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Jin, J, Wrench, J, Gibbon, JT ORCID: 0000-0003-1548-0791, Hesp, D, Shaw, AP, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Sedghi, N ORCID: 0000-0002-2004-6159, Phillips, LJ ORCID: 0000-0001-5181-1565, Zou, J, Dhanak, VR et al (show 2 more authors) , Chalker, PR ORCID: 0000-0002-2295-6332 and Hall, S ORCID: 0000-0001-8387-1036 (2017) Schottky Diodes on ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition. IEEE Transactions on Electron Devices, 64 (3). pp. 1225-1230.

Tekin, Serdar, Das, P, Weerakkody, AD, Sedghi, Naser ORCID: 0000-0002-2004-6159, Hall, S ORCID: 0000-0001-8387-1036, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Werner, M, Wrench, JS and Chalker, PR ORCID: 0000-0002-2295-6332 (2021) Single and Triple Insulator Metal-Insulator-Metal Diodes for Infrared Rectennas. Solid-State Electronics, 185. p. 108096.

Tekin, SB, Das, P, Weerakkody, AD, Sedghi, N ORCID: 0000-0002-2004-6159, Hall, S ORCID: 0000-0001-8387-1036, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Werner, M, Wrench, JS and Chalker, PR ORCID: 0000-0002-2295-6332 (2020) Single and Triple Insulator Tunnel Rectifiers for Infrared Energy Harvesting. In: 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2020-9-1 - 2020-9-30, Caen, Normandy, France.

Mitrovic, IZ ORCID: 0000-0003-4816-8905, Weerakkody, AD, Sedghi, N ORCID: 0000-0002-2004-6159, Hall, S ORCID: 0000-0001-8387-1036, Ralph, JF ORCID: 0000-0002-4946-9948, Wrench, JS, Chalker, PR ORCID: 0000-0002-2295-6332, Luo, Z and Beeby, S (2016) Tunnel-Barrier Rectifiers for Optical Nantennas. DIELECTRICS FOR NANOSYSTEMS 7: MATERIALS SCIENCE, PROCESSING, RELIABILITY, AND MANUFACTURING, 72 (2). pp. 287-299.

Chalker, PR ORCID: 0000-0002-2295-6332, Marshall, PA, Dawson, K ORCID: 0000-0003-3249-8328, Brunell, IF, Sutcliffe, CJ and Potter, RJ ORCID: 0000-0003-0896-4536 (2015) Vacuum ultraviolet photochemical selectivearea atomic layer deposition of Al2O3 dielectrics. AIP Advances, 5 (1). 017115-017115.

Roberts, JW, Jarman, JC, Johnstone, DN, Midgley, PA, Chalker, PR ORCID: 0000-0002-2295-6332, Oliver, RA and Massabuau, FC-P (2018) alpha-Ga2O3 grown by low temperature atomic layer deposition on sapphire. JOURNAL OF CRYSTAL GROWTH, 487. pp. 23-27.

Jin, Jidong, Zhang, Jiawei, Shaw, Andrew, Kudina, Valeriya, Mitrovic, I ORCID: 0000-0003-4816-8905, Wrench, JS, Chalker, PR ORCID: 0000-0002-2295-6332, Balocco, Claudio, Song, Aimin and Hall, S ORCID: 0000-0001-8387-1036 (2018) A high speed PE-ALD ZnO Schottky diode rectifier with low interface-state density. Journal of Physics D: Applied Physics, 51 (6). 065102-065102.

Golrokhi, Z, Marshall, PA, Romani, S, Rushworth, S, Chalker, PR ORCID: 0000-0002-2295-6332 and Potter, RJ ORCID: 0000-0003-0896-4536 (2017) The influence of tertiary butyl hydrazine as a co-reactant on the atomic layer deposition of silver. Applied Surface Science, 399. pp. 123-131.

Noureddine, I Nemr, Sedghi, N ORCID: 0000-0002-2004-6159, Wrench, JS, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Chalker, PR ORCID: 0000-0002-2295-6332 and Hall, S ORCID: 0000-0001-8387-1036 (2022) <p>Structural and electrical investigation of MI₂M and MI₃M diodes for improved non-linear, low bias rectification</p>. SOLID-STATE ELECTRONICS, 194. p. 108349.

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Sedghi, N ORCID: 0000-0002-2004-6159, Li, H, Brunell, IF, Dawson, K ORCID: 0000-0003-3249-8328, Potter, RJ ORCID: 0000-0003-0896-4536, Guo, Y, Gibbon, JT ORCID: 0000-0003-1548-0791, Dhanak, VR, Zhang, WD, Zhang, JF et al (show 3 more authors) , Robertson, J, Hall, S ORCID: 0000-0001-8387-1036 and Chalker, PR ORCID: 0000-0002-2295-6332 (2017) The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM. Applied Physics Letters, 110 (10). 102902-1-102902-4.