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Amano, H, Baines, Y, Beam, E, Borga, Matteo, Bouchet, T, Chalker, Paul R ORCID: 0000-0002-2295-6332, Charles, M, Chen, Kevin J, Chowdhury, Nadim, Chu, Rongming et al (show 55 more authors)
(2018)
The 2018 GaN power electronics roadmap.
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 51 (16).
p. 163001.
Das, Partha ORCID: 0000-0003-1147-6541, Jones, Leanne AH, Gibbon, James T, Dhanak, Vinod R, Partida-Manzanera, Teresa, Roberts, Joseph W, Potter, Richard ORCID: 0000-0003-0896-4536, Chalker, Paul R ORCID: 0000-0002-2295-6332, Cho, Sung-Jin, Thayne, Iain G et al (show 2 more authors)
(2020)
Band Line-up Investigation of Atomic Layer Deposited TiAlO and GaAlO on GaN.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 9 (6).
063003-063003.
Cui, Miao, Cai, Yutao, Lam, Sang, Liu, Wen, Zhao, Chun, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Taylor, Stephen ORCID: 0000-0002-2144-8459, Chalker, Paul R ORCID: 0000-0002-2295-6332 and Zhao, Cezhou
(2018)
Characterization of Transient Threshold Voltage Shifts in Enhancement- and Depletion-mode AlGaN/GaN Metal-Insulator-Semiconductor (MIS)-HEMTs.
In: 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC), 2018-6-6 - 2018-6-8.
Nicol, David, Reynolds, Stephen, Barr, Kristopher, Roberts, Joseph W, Jarman, John J, Chalker, Paul R ORCID: 0000-0002-2295-6332 and Massabuau, Fabien C‐P
(2024)
Constant Photocurrent Method to Probe the Sub‐Bandgap Absorption in Wide Bandgap Semiconductor Films: The Case of α‐Ga<sub>2</sub>O<sub>3</sub>.
physica status solidi (b).
Tekin, Serdar B, Almalki, Saeed, Vezzoli, Andrea ORCID: 0000-0002-8059-0113, O’Brien, Liam, Hall, Steve ORCID: 0000-0001-8387-1036, Chalker, Paul R ORCID: 0000-0002-2295-6332 and Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905
(2022)
(Digital Presentation) Optimization of MIM Rectifiers for Terahertz Rectennas.
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Vavasour, Oliver J, Jefferies, Richard, Walker, Marc, Roberts, Joseph W, Meakin, Naomi R, Gammon, Peter M, Chalker, Paul R ORCID: 0000-0002-2295-6332 and Ashley, Tim
(2019)
Effect of HCl cleaning on InSb-Al2O3 MOS capacitors.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 34 (3).
035032-035032.
Cai, Yutao, Liu, Wen, Cui, Miao, Sun, Ruize, Liang, Yung C, Wen, Huiqing, Yang, Li, Supardan, Siti N, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Taylor, Stephen ORCID: 0000-0002-2144-8459 et al (show 2 more authors)
(2020)
Effect of surface treatment on electrical properties of GaN metal-insulator-semiconductor devices with Al2O3 gate dielectric.
JAPANESE JOURNAL OF APPLIED PHYSICS, 59 (4).
041001-041001.
Lu, Qifeng, Mu, Yifei, Roberts, Joseph W, Althobaiti, Mohammed, Dhanak, Vinod R ORCID: 0000-0001-8053-654X, Wu, Jingjin, Zhao, Chun, Zhao, Ce Zhou, Zhang, Qian, Yang, Li et al (show 3 more authors)
(2015)
Electrical Properties and Interfacial Studies of Hf<i><sub>x</sub></i>Ti<sub>1-<i>x</i></sub>O<sub>2</sub> High Permittivity Gate Insulators Deposited on Germanium Substrates.
MATERIALS, 8 (12).
pp. 8169-8182.
Werner, Matthew, Roberts, Joseph W, Potter, Richard J ORCID: 0000-0003-0896-4536, Dawson, Karl ORCID: 0000-0003-3249-8328 and Chalker, Paul R ORCID: 0000-0002-2295-6332
(2018)
Elucidation of ALD MgZnO deposition processes using low energy ion scattering.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 36 (2).
02D406-02D406.
Swallow, Jack EN, Vorwerk, Christian, Mazzolini, Piero, Vogt, Patrick, Bierwagen, Oliver, Karg, Alexander, Eickhoff, Martin, Schoermann, Joerg, Wagner, Markus R, Roberts, Joseph W et al (show 14 more authors)
(2020)
Influence of Polymorphism on the Electronic Structure of Ga<sub>2</sub>O<sub>3</sub>.
CHEMISTRY OF MATERIALS, 32 (19).
pp. 8460-8470.
Lu, Qifeng, Zhao, Ce Zhou, Zhao, Chun, Taylor, Steve and Chalker, Paul R ORCID: 0000-0002-2295-6332
(2017)
Investigation of Anomalous Capacitance-Voltage Behavior Caused by Interface Dipoles and the Effect of Post-Metal-Annealing.
In: INTERNATIONAL CONFERENCE “FUNCTIONAL ANALYSIS IN INTERDISCIPLINARY APPLICATIONS” (FAIA2017).
Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Das, Partha ORCID: 0000-0003-1147-6541, Jones, Leanne, Gibbon, James, Dhanak, Vinod R, Mahapatra, Rajat, Partida Manzanera, Teresa ORCID: 0000-0002-2834-6340, Roberts, Joseph W, Potter, Richard J ORCID: 0000-0003-0896-4536, Chalker, Paul R ORCID: 0000-0002-2295-6332 et al (show 2 more authors)
(2020)
(Invited) Band Line-up of High-k Oxides on GaN.
ECS Transactions, 97 (1).
pp. 67-81.
Kulczyk-Malecka, Justyna, Donaghy, David, Delfour-Peyrethon, Brice, Werner, Matthew, Chalker, Paul R ORCID: 0000-0002-2295-6332, Bradley, James W and Kelly, Peter J
(2020)
Nb-doped TiO2 coatings developed by high power impulse magnetron sputtering-chemical vapor deposition hybrid deposition process.
Journal of Vacuum Science & Technology A, 38 (3).
033410-033410.
Massabuau, Fabien C-P, Adams, Francesca, Nicol, David, Jarman, John C, Frentrup, Martin, Roberts, Joseph W, O'Hanlon, Thomas J, Kovacs, Andras, Chalker, Paul R ORCID: 0000-0002-2295-6332 and Oliver, RA
(2023)
Ni/Au contacts to corundum <i>α</i>-Ga<sub>2</sub>O<sub>3</sub>.
JAPANESE JOURNAL OF APPLIED PHYSICS, 62 (SF).
SF1008-SF1008.
Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Almalki, Saeed, Tekin, Serdar B, Sedghi, Naser ORCID: 0000-0002-2004-6159, Chalker, Paul R ORCID: 0000-0002-2295-6332 and Hall, Stephen ORCID: 0000-0001-8387-1036
(2021)
Oxides for Rectenna Technology.
Materials, 14 (18).
p. 5218.
Mu, Yifei, Zhao, Ce Zhou, Qi, Yanfei, Lam, Sang, Zhao, Chun, Lu, Qifeng, Cai, Yutao, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Taylor, Stephen ORCID: 0000-0002-2144-8459 and Chalker, Paul R ORCID: 0000-0002-2295-6332
(2016)
Real-time and on-site γ-ray radiation response testing system for semiconductor devices and its applications.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 372.
pp. 14-28.
Black, Kate ORCID: 0000-0003-3638-6518, Singh, Jetinder, Mehta, Danielle, Sung, Sarah, Sutcliffe, Christopher J and Chalker, Paul R ORCID: 0000-0002-2295-6332
(2016)
Silver ink formulations for sinter-free printing of conductive films.
Scientific Reports, 6 (1).
20814-.
Massabuau, Fabien, Nicol, D, Adams, F, Jarman, John, Roberts, Joseph, Kovacs, Andras, Chalker, Paul R ORCID: 0000-0002-2295-6332 and Oliver, Rachel
(2021)
Study of Ti contacts to corundum α-Ga2O3.
Journal of Physics D: Applied Physics, 54 (38).
p. 384001.
Mu, Yifei, Fang, Yuxiao, Zhao, Ce Zhou, Zhao, Chun, Lu, Qifeng, Qi, Yanfei, Yi, Ruowei, Yang, Li, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Taylor, Stephen ORCID: 0000-0002-2144-8459 et al (show 1 more authors)
(2017)
Total Dose Effects and Bias Instabilities of (NH<sub>4</sub>)<sub>2</sub>S Passivated Ge MOS Capacitors With Hf<i><sub>x</sub></i>Zr<sub>1-<i>x</i></sub>O<i><sub>y</sub></i> Thin Films.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 64 (12).
pp. 2913-2921.
Mu, Yifei, Zhao, Ce Zhou, Lu, Qifeng, Zhao, Chun, Qi, Yanfei, Lam, Sang, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Taylor, Stephen ORCID: 0000-0002-2144-8459 and Chalker, Paul R ORCID: 0000-0002-2295-6332
(2017)
Total Ionizing Dose Response of Hafnium-Oxide Based MOS Devices to Low-Dose-Rate Gamma Ray Radiation Observed by Pulse CV and On-Site Measurements.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 64 (1).
pp. 673-682.
Hall, Steve ORCID: 0000-0001-8387-1036, Chalker, Paul R ORCID: 0000-0002-2295-6332 and Mitrovic, Ivona ORCID: 0000-0003-4816-8905
(2016)
ZnO MESFETS for application to Intelligent Windows.
Impact, 2016 (2).
pp. 49-51.