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Jones, L ORCID: 0000-0002-4654-3882, Gibbon, JT ORCID: 0000-0003-1548-0791, Roberts, JW, Cho, SJ, Thayne, IG, Chalker, PR ORCID: 0000-0002-2295-6332, Dhanak, VR and Mitrovic, IZ ORCID: 0000-0003-4816-8905
(2018)
Aluminium doped Ga2O3 for GaN MIS-HEMTs.
In: 20th Workshop on Dielectrics in Microelectronics – WODIM 2018, 2018-6-11 - 2018-6-14, Berlin, Germany.
Shaw, A, Wrench, JS, Jin, JD, Whittles, TJ ORCID: 0000-0002-5154-7511, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Raja, M, Dhanak, VR ORCID: 0000-0001-8053-654X, Chalker, PR ORCID: 0000-0002-2295-6332 and Hall, S ORCID: 0000-0001-8387-1036
(2016)
Atomic layer deposition of Nb-doped ZnO for thin film transistors.
APPLIED PHYSICS LETTERS, 109 (22).
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Birkett, M ORCID: 0000-0002-6076-6820, Savory, CN, Fioretti, AN, Thompson, P ORCID: 0000-0002-9697-6141, Muryn, CA, Weerakkody, AD, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Hall, S ORCID: 0000-0001-8387-1036, Treharne, R, Dhanak, VR ORCID: 0000-0001-8053-654X et al (show 3 more authors)
(2017)
Atypically small temperature-dependence of the direct band gap in the metastable semiconductor copper nitride Cu3N.
Physical Review B - Condensed Matter and Materials Physics, 95 (11).
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Whittles, T ORCID: 0000-0002-5154-7511, Burton, L, Skelton, J, Walsh, A, Veal, TD ORCID: 0000-0002-0610-5626 and Dhanak, VR
(2016)
Band Alignments, Valence Bands and Core Levels in the Tin Sulphides SnS, SnS2 and Sn2S3: Experiment and theory.
Chemistry of Materials, 28 (11).
pp. 3718-3726.
Supardan, SN, Das, P, Shaw, AP, Major, JD, Valizadeh, R, Hannah, A, Chakraborty, AK, Mahapatra, R, Dhanak, VR and Mitrovic, IZ ORCID: 0000-0003-4816-8905
(2018)
Band alignment of sputtered Al2O3, MgO and ZrO2 on GaN for MIS-HEMTs.
In: UK Nitrides Consortium (UKNC) Winter Conference, 2018-1-10 - 2018-1-11, University of Manchester.
Gibbon, JT ORCID: 0000-0003-1548-0791, Jones, L ORCID: 0000-0002-4654-3882, Roberts, JW, Althobaiti, M, Chalker, PR ORCID: 0000-0002-2295-6332, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905 and Dhanak, VR ORCID: 0000-0001-8053-654X
(2018)
Band alignments at Ga2O3 heterojunction interfaces with Si and Ge.
AIP Advances, 8 (6).
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Gibbon, JT ORCID: 0000-0003-1548-0791, Jones, L ORCID: 0000-0002-4654-3882, Roberts, JW, Althobaiti, M, Chalker, PR ORCID: 0000-0002-2295-6332, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905 and Dhanak, VR ORCID: 0000-0001-8053-654X
(2018)
Band alignments at Ga<sub>2</sub>O<sub>3</sub> heterojunction interfaces with Si and Ge.
AIP ADVANCES, 8 (6).
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Supardan, SN, Das, P ORCID: 0000-0003-1147-6541, Major, JD ORCID: 0000-0002-5554-1985, Hannah, A, Zaidi, ZH, Mahapatra, R, Lee, KB, Valizadeh, R, Houston, PA, Hall, S ORCID: 0000-0001-8387-1036 et al (show 2 more authors)
(2020)
Band alignments of sputtered dielectrics on GaN.
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 53 (7).
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Gibson, QD, Dyer, MS ORCID: 0000-0002-4923-3003, Whitehead, GFS, Alaria, J ORCID: 0000-0001-5868-0318, Pitcher, MJ ORCID: 0000-0003-2044-6774, Edwards, HJ, Claridge, JB ORCID: 0000-0003-4849-6714, Zanella, M ORCID: 0000-0002-6164-6169, Dawson, K ORCID: 0000-0003-3249-8328, Manning, TD ORCID: 0000-0002-7624-4306 et al (show 2 more authors)
(2017)
Bi4O4Cu1.7Se2.7Cl0.3: an intergrowth of BiOCuSe and Bi2O2Se stabilized by the addition of a third anion.
Journal of the American Chemical Society, 139 (44).
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Mitrovic, IZ ORCID: 0000-0003-4816-8905, Weerakkody, DADC, Sedghi, N ORCID: 0000-0002-2004-6159, Ralph, Jason F ORCID: 0000-0002-4946-9948, Hall, S ORCID: 0000-0001-8387-1036, Dhanak, VR, Luo, Z and Beeby, S
(2018)
Controlled modification of resonant tunneling in metal-insulator-insulator-metal structures.
Applied Physics Letters, 112 (1).
Alsawi, A, Sait, CRJ, Hesp, D, Unsworth, P, Ashwin, MJ ORCID: 0000-0001-8657-8097, Dhanak, VR ORCID: 0000-0001-8053-654X, Veal, TD ORCID: 0000-0002-0610-5626 and Weightman, P
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Core hole electron screening in InSb.
Journal of Electron Spectroscopy and Related Phenomena, 269.
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Speckbacher, M, Treu, J, Whittles, TJ ORCID: 0000-0002-5154-7511, Linhart, WM, Xu, X, Saller, K, Dhanak, VR, Abstreiter, G, Finley, JJ, Veal, TD ORCID: 0000-0002-0610-5626 et al (show 1 more authors)
(2016)
Direct Measurements of Fermi Level Pinning at the Surface of Intrinsically n-Type InGaAs Nanowires.
Nano Letters: a journal dedicated to nanoscience and nanotechnology, 16 (8).
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Paul, AD, Biswas, S, Das, P ORCID: 0000-0003-1147-6541, Edwards, HJ, Dhanak, VR ORCID: 0000-0001-8053-654X and Mahapatra, R
(2020)
Effect of Aluminum Doping on Performance of HfO<i><sub>x</sub></i>-Based Flexible Resistive Memory Devices.
IEEE TRANSACTIONS ON ELECTRON DEVICES, 67 (10).
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Coca Clemente, J
(2019)
Electrochemical and surface study of lithium-rich transition metal oxides used as cathodes in lithium-ion batteries.
PhD thesis, University of Liverpool.
Tekin, SB, Almalki, S, Finch, H, Vezzoli, A ORCID: 0000-0002-8059-0113, O'Brien, L ORCID: 0000-0002-0136-8603, Dhanak, VR ORCID: 0000-0001-8053-654X, Hall, S ORCID: 0000-0001-8387-1036 and Mitrovic, IZ ORCID: 0000-0003-4816-8905
(2023)
Electron affinity of metal oxide thin films of TiO<sub>2</sub>, ZnO, and NiO and their applicability in 28.3 THz rectenna devices.
JOURNAL OF APPLIED PHYSICS, 134 (8).
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Bromley, D, Wright, AJ, Jones, LAH, Swallow, JEN, Beesley, T, Batty, R, Weatherup, RS, Dhanak, VR and O'Brien, L ORCID: 0000-0002-0136-8603
(2022)
Electron beam evaporation of superconductor-ferromagnet heterostructures.
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(2018)
Electronic and transport properties of Li-doped NiO epitaxial thin films.
Journal of Materials Chemistry C, 6 (9).
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Zhang, JY, Li, WW, Hoye, RLZ, MacManus-Driscoll, JL, Budde, M, Bierwagen, O, Wang, L, Du, Y, Wahila, MJ, Piper, LFJ et al (show 4 more authors)
(2018)
Electronic and transport properties of Li-doped NiO epitaxial thin films (vol 6, pg 2275, 2018).
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Sedghi, N ORCID: 0000-0002-2004-6159, Li, H, Brunell, IF, Dawson, K ORCID: 0000-0003-3249-8328, Guo, Y, Potter, RJ ORCID: 0000-0003-0896-4536, Gibbon, JT ORCID: 0000-0003-1548-0791, Dhanak, VR ORCID: 0000-0001-8053-654X, Zhang, WD, Zhang, JF et al (show 3 more authors)
(2017)
Enhanced Switching Stability in Ta2O5 Resistive RAM by Fluorine Doping.
Applied Physics Letters, 111 (9).
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Sawangsri, K, Das, P ORCID: 0000-0003-1147-6541, Supardan, SN, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Hall, S ORCID: 0000-0001-8387-1036, Mahapatra, R, Chakraborty, AK, Treharne, R, Gibbon, J ORCID: 0000-0003-1548-0791, Dhanak, VR et al (show 2 more authors)
(2017)
Experimental band alignment of Ta2O5/GaN for MIS-HEMT applications.
Microelectronic Engineering, 178.
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Sawangsri, K, Das, P ORCID: 0000-0003-1147-6541, Supardan, SN, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Hall, S ORCID: 0000-0001-8387-1036, Mahapatra, R, Chakraborty, AK, Treharne, R, Gibbon, J ORCID: 0000-0003-1548-0791, Dhanak, VR ORCID: 0000-0001-8053-654X et al (show 2 more authors)
(2017)
Experimental band alignment of Ta<sub>2</sub>O<sub>5</sub>/GaN for MIS-HEMT applications.
In: 20th Conference on "Insulating Films on Semiconductors", 2017-6-27 - 2017-6-30, Potsdam, Germany.
Mitrovic, IZ ORCID: 0000-0003-4816-8905, Althobaiti, M, Weerakkody, AD, Dhanak, VR ORCID: 0000-0001-8053-654X, Linhart, WM, Veal, TD ORCID: 0000-0002-0610-5626, Sedghi, N ORCID: 0000-0002-2004-6159, Hall, S ORCID: 0000-0001-8387-1036, Chalker, PR ORCID: 0000-0002-2295-6332, Tsoutsou, D et al (show 1 more authors)
(2014)
Ge interface engineering using ultra-thin La2O3 and Y2O3 films: A study into the effect of deposition temperature.
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Althobaiti, M ORCID: 0000-0003-4779-0057, Mather, S, Sedghi, N ORCID: 0000-0002-2004-6159, Dhanak, VR, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Hall, S ORCID: 0000-0001-8387-1036 and Chalker, PR ORCID: 0000-0002-2295-6332
(2015)
Hafnia and alumina on sulphur passivated germanium.
Vacuum, 122.
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Biswas, S, Paul, AD, Das, P ORCID: 0000-0003-1147-6541, Tiwary, P, Edwards, HJ, Dhanak, VR ORCID: 0000-0001-8053-654X, Mitrovic, IZ ORCID: 0000-0003-4816-8905 and Mahapatra, R
(2021)
Impact of AlO<i><sub>y</sub></i> Interfacial Layer on Resistive Switching Performance of Flexible HfO<i><sub>x</sub></i>/AlO<i><sub>y</sub></i> ReRAMs.
IEEE TRANSACTIONS ON ELECTRON DEVICES, 68 (8).
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Maji, S, Paul, AD, Das, P ORCID: 0000-0003-1147-6541, Chatterjee, S, Chatterjee, P, Dhanak, VR, Chakraborty, AK and Mahapatra, R
(2021)
Improved resistive switching performance of graphene oxide-based flexible ReRAM with HfOx buffer layer.
Journal of Materials Science: Materials in Electronics, 32 (3).
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Mitrovic, IZ ORCID: 0000-0003-4816-8905, Althobaiti, M, Weerakkody, AD, Sedghi, N ORCID: 0000-0002-2004-6159, Hall, S ORCID: 0000-0001-8387-1036, Dhanak, VR, Mather, S, Chalker, PR ORCID: 0000-0002-2295-6332, Tsoutsou, D, Dimoulas, A et al (show 4 more authors)
(2014)
Interface Engineering Routes for a Future CMOS Ge-based Technology.
DIELECTRICS FOR NANOSYSTEMS 6: MATERIALS SCIENCE, PROCESSING, RELIABILITY, AND MANUFACTURING, 61 (2).
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Zurauskaite, L, Jones, L ORCID: 0000-0002-4654-3882, Dhanak, VR ORCID: 0000-0001-8053-654X, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Hellstrom, PE and Ostling, M
(2018)
Investigation of Tm<sub>2</sub>O<sub>3</sub><SUP> </SUP>as a Gate Dielectric for Ge MOS Devices.
SIGE, GE, AND RELATED COMPOUNDS: MATERIALS, PROCESSING, AND DEVICES 8, 86 (7).
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Roberts, JW, Chalker, PR ORCID: 0000-0002-2295-6332, Ding, B, Oliver, RA, Gibbon, JT, Jones, LAH ORCID: 0000-0002-4654-3882, Dhanak, VR, Phillips, LJ ORCID: 0000-0001-5181-1565, Major, JD ORCID: 0000-0002-5554-1985 and Massabuau, FC-P
(2019)
Low temperature growth and optical properties of alpha-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition.
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Major, JD ORCID: 0000-0002-5554-1985, Phillips, LJ ORCID: 0000-0001-5181-1565, Al Turkestani, M, Bowen, L, Whittles, TJ ORCID: 0000-0002-5154-7511, Dhanak, VR and Durose, K ORCID: 0000-0003-1183-3211
(2017)
P3HT as a pinhole blocking back contact for CdTe thin film solar cells.
Solar Energy Materials and Solar Cells, 172.
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Shaw, A, Whittles, TJ ORCID: 0000-0002-5154-7511, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Jin, JD, Wrench, JS, Hesp, D, Dhanak, VR, Chalker, PR ORCID: 0000-0002-2295-6332 and Hall, S ORCID: 0000-0001-8387-1036
(2015)
Physical and Electrical Characterization of Mg-Doped ZnO Thin-Film Transistors.
In: ESSDERC 2015 - 45th European Solid-State Device Research Conference, 2015-9-14 - 2015-9-18, Graz, Austria.
Supardan, S, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Hesp, D, Dhanak, VR, Hall, S ORCID: 0000-0001-8387-1036, Schamm-Chardon, S, Dentoni Litta, E, Hellstrom, P-E and Ostling, M
(2016)
Rare-earth oxide interfacial layer for sub-nm EOT CMOS technology.
In: 3rd International Conference on Nanotechnology, Nanomaterials and Thin Films for Energy Applications, 2016-7-27 - 2016-7-29, University of Liverpool.
Jin, J, Wrench, J, Gibbon, JT ORCID: 0000-0003-1548-0791, Hesp, D, Shaw, AP, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Sedghi, N ORCID: 0000-0002-2004-6159, Phillips, LJ ORCID: 0000-0001-5181-1565, Zou, J, Dhanak, VR ORCID: 0000-0001-8053-654X et al (show 2 more authors)
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Schottky Diodes on ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition.
IEEE Transactions on Electron Devices, 64 (3).
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Maji, S, Samanta, S, Das, P ORCID: 0000-0003-1147-6541, Maikap, S, Dhanak, VR ORCID: 0000-0001-8053-654X, Mitrovic, IZ ORCID: 0000-0003-4816-8905 and Mahapatra, R
(2019)
Set compliance current induced resistive memory characteristics of W/Hf/HfOx/TiN devices.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 37 (2).
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Sodium Fluoride Doping Approach to CdTe Solar Cells.
ACS Applied Energy Materials, 5 (4).
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Supardan, SN, Das, P, Shaw, AP, Major, JD ORCID: 0000-0002-5554-1985, Valizadeh, R, Hannah, A, Chakraborty, AK, Mahapatra, R, Hall, S ORCID: 0000-0001-8387-1036, Dhanak, VR et al (show 1 more authors)
(2018)
Sputtered ZrO2, Al2O3 and MgO on GaN: band alignment and interface study.
In: 20th Workshop on Dielectrics in Microelectronics - Wodim 2018, 2018-6-11 - 2018-6-14, Berlin, Germany.
Mitrovic, IZ ORCID: 0000-0003-4816-8905, Supardan, SN, Hesp, D, Dhanak, VR, Hall, S ORCID: 0000-0001-8387-1036, Schamm-Chardon, S, Dentoni Litta, E, Hellstrom, P-E and Ostling, M
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Structure of the interface in sub-nm EOT TmSiO/HfO2 gate stack.
In: 19th Workshop on Dielectrics in Microelectronics –WODIM 2016, 2016-6-27 - 2016-6-30, Catania, Italy.
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Templated Quasicrystalline Molecular Ordering.
Nano Letters: a journal dedicated to nanoscience and nanotechnology, 14 (3).
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Tunable crystal structure of Cu<sub>2</sub>SnS<sub>3</sub> deposited by spray pyrolysis and its impact on the chemistry and electronic structure.
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The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM.
Applied Physics Letters, 110 (10).
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