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Number of items: 32.


Jones, L ORCID: 0000-0002-4654-3882, Gibbon, JT ORCID: 0000-0003-1548-0791, Roberts, JW, Cho, SJ, Thayne, IG, Chalker, PR ORCID: 0000-0002-2295-6332, Dhanak, VR and Mitrovic, IZ ORCID: 0000-0003-4816-8905
(2018) Aluminium doped Ga2O3 for GaN MIS-HEMTs. In: 20th Workshop on Dielectrics in Microelectronics – WODIM 2018, 2018-06-11 - 2018-06-14, Berlin, Germany.


Shaw, A, Wrench, JS, Jin, JD, Whittles, TJ ORCID: 0000-0002-5154-7511, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Raja, M, Dhanak, VR, Chalker, PR ORCID: 0000-0002-2295-6332 and Hall, S ORCID: 0000-0001-8387-1036
(2016) Atomic layer deposition of Nb-doped ZnO for thin film transistors. APPLIED PHYSICS LETTERS, 109 (22).


Birkett, M ORCID: 0000-0002-6076-6820, Savory, CN, Fioretti, AN, Thompson, P ORCID: 0000-0002-9697-6141, Muryn, CA, Weerakkody, AD, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Hall, S ORCID: 0000-0001-8387-1036, Treharne, R, Dhanak, VR
et al (show 3 more authors) (2017) Atypically small temperature-dependence of the direct band gap in the metastable semiconductor copper nitride Cu3N. Physical Review B - Condensed Matter and Materials Physics, 95.


Whittles, T ORCID: 0000-0002-5154-7511, Burton, L, Skelton, J, Walsh, A, Veal, TD ORCID: 0000-0002-0610-5626 and Dhanak, VR
(2016) Band Alignments, Valence Bands and Core Levels in the Tin Sulphides SnS, SnS2 and Sn2S3: Experiment and theory. Chemistry of Materials, 28 (11). 3718 - 3726.


Supardan, SN, Das, P, Shaw, AP, Major, JD, Valizadeh, R, Hannah, A, Chakraborty, AK, Mahapatra, R, Dhanak, VR and Mitrovic, IZ ORCID: 0000-0003-4816-8905
(2018) Band alignment of sputtered Al2O3, MgO and ZrO2 on GaN for MIS-HEMTs. In: UK Nitrides Consortium (UKNC) Winter Conference, 2018-01-10 - 2018-01-11, University of Manchester.


Gibbon, JT ORCID: 0000-0003-1548-0791, Jones, L ORCID: 0000-0002-4654-3882, Roberts, JW, Althobaiti, M, Chalker, PR ORCID: 0000-0002-2295-6332, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905 and Dhanak, VR
(2018) Band alignments at Ga2O3 heterojunction interfaces with Si and Ge. AIP ADVANCES, 8 (6).


Gibbon, JT, Jones, L ORCID: 0000-0002-4654-3882, Roberts, JW, Althobaiti, M, Chalker, PR, Mitrovic, Ivona Z and Dhanak, VR
(2018) Band alignments at Ga2O3 heterojunction interfaces with Si and Ge. AIP Advances, 8 (6). 065011 - 065011.


Supardan, SN, Das, P ORCID: 0000-0003-1147-6541, Major, JD ORCID: 0000-0002-5554-1985, Hannah, A, Zaidi, ZH, Mahapatra, R, Lee, KB, Valizadeh, R, Houston, PA, Hall, S ORCID: 0000-0001-8387-1036
et al (show 2 more authors) (2020) Band alignments of sputtered dielectrics on GaN. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 53 (7).


Gibson, QD, Dyer, MS ORCID: 0000-0002-4923-3003, Whitehead, GFS, Alaria, J ORCID: 0000-0001-5868-0318, Pitcher, MJ ORCID: 0000-0003-2044-6774, Edwards, HJ, Claridge, JB ORCID: 0000-0003-4849-6714, Zanella, M ORCID: 0000-0002-6164-6169, Dawson, K ORCID: 0000-0003-3249-8328, Manning, TD ORCID: 0000-0002-7624-4306
et al (show 2 more authors) (2017) Bi4O4Cu1.7Se2.7Cl0.3: an intergrowth of BiOCuSe and Bi2O2Se stabilized by the addition of a third anion. Journal of the American Chemical Society, 139 (44). 15568 - 15571.


Mitrovic, IZ ORCID: 0000-0003-4816-8905, Weerakkody, DADC, Sedghi, N ORCID: 0000-0002-2004-6159, Ralph, Jason F ORCID: 0000-0002-4946-9948, Hall, S ORCID: 0000-0001-8387-1036, Dhanak, VR, Luo, Z and Beeby, S
(2018) Controlled modification of resonant tunneling in metal-insulator-insulator-metal structures. Applied Physics Letters, 112.


Speckbacher, M, Treu, J, Whittles, TJ ORCID: 0000-0002-5154-7511, Linhart, WM, Xu, X, Saller, K, Dhanak, VR, Abstreiter, G, Finley, JJ, Veal, TD ORCID: 0000-0002-0610-5626
et al (show 1 more authors) (2016) Direct Measurements of Fermi Level Pinning at the Surface of Intrinsically n-Type InGaAs Nanowires. Nano Letters: a journal dedicated to nanoscience and nanotechnology, 16 (8). 5135 - 5142.


Paul, AD, Biswas, S, Das, P ORCID: 0000-0003-1147-6541, Edwards, HJ, Dhanak, VR and Mahapatra, R
(2020) Effect of Aluminum Doping on Performance of HfOx-Based Flexible Resistive Memory Devices. IEEE TRANSACTIONS ON ELECTRON DEVICES, 67 (10). 4222 - 4227.


Coca Clemente, J
(2019) Electrochemical and surface study of lithium-rich transition metal oxides used as cathodes in lithium-ion batteries. PhD thesis, University of Liverpool.


Zhang, JY, Li, WW, Hoye, RLZ, MacManus-Driscoll, JL, Budde, M, Bierwagen, O, Wang, L, Du, Y, Wahila, MJ, Piper, LFJ
et al (show 4 more authors) (2018) Electronic and transport properties of Li-doped NiO epitaxial thin films. Journal of Materials Chemistry C, 6 (9). 2275 - 2282.


Zhang, JY, Li, WW, Hoye, RLZ, MacManus-Driscoll, JL, Budde, M, Bierwagen, O, Wang, L, Du, Y, Wahila, MJ, Piper, LFJ
et al (show 4 more authors) (2018) Electronic and transport properties of Li-doped NiO epitaxial thin films (vol 6, pg 2275, 2018). JOURNAL OF MATERIALS CHEMISTRY C, 6 (15). 4326 - 4326.


Sedghi, N ORCID: 0000-0002-2004-6159, Li, H, Brunell, IF, Dawson, K ORCID: 0000-0003-3249-8328, Guo, Y, Potter, RJ ORCID: 0000-0003-0896-4536, Gibbon, JT ORCID: 0000-0003-1548-0791, Dhanak, VR, Zhang, WD, Zhang, JF
et al (show 3 more authors) (2017) Enhanced Switching Stability in Ta2O5 Resistive RAM by Fluorine Doping. Applied Physics Letters, 111 (9).


Sawangsri, K, Das, P ORCID: 0000-0003-1147-6541, Supardan, SN, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Hall, S ORCID: 0000-0001-8387-1036, Mahapatra, R, Chakraborty, AK, Treharne, R, Gibbon, J ORCID: 0000-0003-1548-0791, Dhanak, VR
et al (show 2 more authors) (2017) Experimental band alignment of Ta2O5/GaN for MIS-HEMT applications. .


Sawangsri, K, Das, P ORCID: 0000-0003-1147-6541, Supardan, SN, Mitrovic, IZ, Hall, S ORCID: 0000-0001-8387-1036, Mahapatra, R, Chakraborty, AK, Treharne, R, Gibbon, J ORCID: 0000-0003-1548-0791, Dhanak, VR
et al (show 2 more authors) (2017) Experimental band alignment of Ta2O5/GaN for MIS-HEMT applications. Microelectronic Engineering, 178. 178 - 181.


Mitrovic, IZ ORCID: 0000-0003-4816-8905, Althobaiti, M, Weerakkody, AD, Dhanak, VR, Linhart, WM, Veal, TD ORCID: 0000-0002-0610-5626, Sedghi, N ORCID: 0000-0002-2004-6159, Hall, S ORCID: 0000-0001-8387-1036, Chalker, PR ORCID: 0000-0002-2295-6332, Tsoutsou, D
et al (show 1 more authors) (2014) Ge interface engineering using ultra-thin La2O3 and Y2O3 films: A study into the effect of deposition temperature. Journal of Applied Physics, 115 (11).


Althobaiti, M ORCID: 0000-0003-4779-0057, Mather, S, Sedghi, N ORCID: 0000-0002-2004-6159, Dhanak, VR, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Hall, S ORCID: 0000-0001-8387-1036 and Chalker, PR ORCID: 0000-0002-2295-6332
(2015) Hafnia and alumina on sulphur passivated germanium. Vacuum, 122. 306 - 309.


Mitrovic, IZ ORCID: 0000-0003-4816-8905, Althobaiti, M, Weerakkody, AD, Sedghi, N ORCID: 0000-0002-2004-6159, Hall, S ORCID: 0000-0001-8387-1036, Dhanak, VR, Mather, S, Chalker, PR ORCID: 0000-0002-2295-6332, Tsoutsou, D, Dimoulas, A
et al (show 4 more authors) (2014) Interface Engineering Routes for a Future CMOS Ge-based Technology. DIELECTRICS FOR NANOSYSTEMS 6: MATERIALS SCIENCE, PROCESSING, RELIABILITY, AND MANUFACTURING, 61 (2). 73 - 88.


Zurauskaite, L, Jones, L ORCID: 0000-0002-4654-3882, Dhanak, VR, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Hellstrom, PE and Ostling, M
(2018) Investigation of Tm(2)O(3)( )as a Gate Dielectric for Ge MOS Devices. SIGE, GE, AND RELATED COMPOUNDS: MATERIALS, PROCESSING, AND DEVICES 8, 86 (7). 67 - 73.


Roberts, JW, Chalker, PR ORCID: 0000-0002-2295-6332, Ding, B, Oliver, RA, Gibbon, JT, Jones, LAH ORCID: 0000-0002-4654-3882, Dhanak, VR, Phillips, LJ ORCID: 0000-0001-5181-1565, Major, JD ORCID: 0000-0002-5554-1985 and Massabuau, FC-P
(2019) Low temperature growth and optical properties of alpha-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition. JOURNAL OF CRYSTAL GROWTH, 528.


Major, JD ORCID: 0000-0002-5554-1985, Phillips, LJ ORCID: 0000-0001-5181-1565, Al Turkestani, M, Bowen, L, Whittles, TJ ORCID: 0000-0002-5154-7511, Dhanak, VR and Durose, K ORCID: 0000-0003-1183-3211
(2017) P3HT as a pinhole blocking back contact for CdTe thin film solar cells. Solar Energy Materials and Solar Cells, 172. 1 - 10.


Shaw, A, Whittles, TJ ORCID: 0000-0002-5154-7511, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Jin, JD, Wrench, JS, Hesp, D, Dhanak, VR, Chalker, PR ORCID: 0000-0002-2295-6332 and Hall, S ORCID: 0000-0001-8387-1036
(2015) Physical and Electrical Characterization of Mg-Doped ZnO Thin-Film Transistors. .


Supardan, S, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Hesp, D, Dhanak, VR, Hall, S ORCID: 0000-0001-8387-1036, Schamm-Chardon, S, Dentoni Litta, E, Hellstrom, P-E and Ostling, M
(2016) Rare-earth oxide interfacial layer for sub-nm EOT CMOS technology. In: 3rd International Conference on Nanotechnology, Nanomaterials and Thin Films for Energy Applications, 2016-07-27 - 2016-07-29, University of Liverpool.


Jin, J, Wrench, J, Gibbon, JT ORCID: 0000-0003-1548-0791, Hesp, D, Shaw, AP, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Sedghi, N ORCID: 0000-0002-2004-6159, Phillips, LJ ORCID: 0000-0001-5181-1565, Zou, J, Dhanak, VR
et al (show 2 more authors) (2017) Schottky Diodes on ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition. IEEE Transactions on Electron Devices, 64 (3). 1225 - 1230.


Maji, S, Samanta, S, Das, P ORCID: 0000-0003-1147-6541, Maikap, S, Dhanak, VR, Mitrovic, IZ ORCID: 0000-0003-4816-8905 and Mahapatra, R
(2019) Set compliance current induced resistive memory characteristics of W/Hf/HfOx/TiN devices. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 37 (2).


Supardan, SN, Das, P, Shaw, AP, Major, JD ORCID: 0000-0002-5554-1985, Valizadeh, R, Hannah, A, Chakraborty, AK, Mahapatra, R, Hall, S ORCID: 0000-0001-8387-1036, Dhanak, VR
et al (show 1 more authors) (2018) Sputtered ZrO2, Al2O3 and MgO on GaN: band alignment and interface study. In: 20th Workshop on Dielectrics in Microelectronics - Wodim 2018, 2018-06-11 - 2018-06-14, Berlin, Germany.


Mitrovic, IZ ORCID: 0000-0003-4816-8905, Supardan, SN, Hesp, D, Dhanak, VR, Hall, S ORCID: 0000-0001-8387-1036, Schamm-Chardon, S, Dentoni Litta, E, Hellstrom, P-E and Ostling, M
(2016) Structure of the interface in sub-nm EOT TmSiO/HfO2 gate stack. In: 19th Workshop on Dielectrics in Microelectronics –WODIM 2016, 2016-06-27 - 2016-06-30, Catania, Italy.


Smerdon, A, Young, KM, Lowe, M, Hars, SS, Yadav, TP, Hesp, D, Dhanak, VR, Tsai, AP, Sharma, HR ORCID: 0000-0003-0456-6258 and McGrath, R ORCID: 0000-0002-9880-5741
(2014) Templated Quasicrystalline Molecular Ordering. Nano Letters: a journal dedicated to nanoscience and nanotechnology, 14 (3). 1184 - 1189.


Sedghi, N ORCID: 0000-0002-2004-6159, Li, H, Brunell, IF, Dawson, K ORCID: 0000-0003-3249-8328, Potter, RJ ORCID: 0000-0003-0896-4536, Guo, Y, Gibbon, JT ORCID: 0000-0003-1548-0791, Dhanak, VR, Zhang, WD, Zhang, JF
et al (show 3 more authors) (2017) The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM. Applied Physics Letters, 110 (10). 102902-1 - 102902-4.

This list was generated on Mon Nov 23 11:12:29 2020 GMT.