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Number of items: 1.
Partida-Manzanera, T, Zaidi, ZH, Roberts, JW, Dolmanan, SB, Lee, KB, Houston, PA, Chalker, PR 
ORCID: 0000-0002-2295-6332, Tripathy, S and Potter, RJ ORCID: 0000-0003-0896-4536
(2019)
Comparison of atomic layer deposited Al<sub>2</sub>O<sub>3</sub> and (Ta<sub>2</sub>O<sub>5</sub>)<sub>0.12</sub>(Al<sub>2</sub>O<sub>3</sub>)<sub>0.88</sub> gate dielectrics on the characteristics of GaN-capped AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors.
JOURNAL OF APPLIED PHYSICS, 126 (3).
034102-034102.