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Number of items: 2.
Shen, ZJ, Zhao, C, Zhao, CZ, Mitrovic, IZ 
ORCID: 0000-0003-4816-8905, Yang, L, Xu, WY, Lim, EG ORCID: 0000-0003-0199-7386, Luo, T, Huang, YB and IEEE,
(2019)
Al/GO/Si/Al RRAM with Solution-processed GO dielectric at Low Fabrication Temperature.
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Qi, YF, Shen, ZJ, Zhao, Chun, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Xu, WY, Lim, EG ORCID: 0000-0003-0199-7386, Yang, L, He, JH, Luo, T, Huang, YB et al (show 1 more authors)
(2020)
Resistive switching behavior of solution-processed AlOx and GO based RRAM at low temperature.
SOLID-STATE ELECTRONICS, 168.