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Roberts, JW, Chalker, PR ORCID: 0000-0002-2295-6332, Lee, KB, Houston, PA, Cho, SJ, Thayne, IG, Guiney, I, Wallis, D and Humphreys, CJ
(2016) Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectrics. APPLIED PHYSICS LETTERS, 108 (7).

Zaidi, ZH, Lee, KB, Roberts, JW, Guiney, I, Qian, H, Jiang, S, Cheong, JS, Li, P, Wallis, DJ, Humphreys, CJ
et al (show 2 more authors) (2018) Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs. JOURNAL OF APPLIED PHYSICS, 123 (18).

This list was generated on Wed Nov 20 06:17:36 2019 GMT.