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Number of items: 2.
Cai, Yutao, Wang, Yang, Liang, Ye, Zhang, Yuanlei, Liu, Wen, Wen, Huiqing, Mitrovic, Ivona Z 
ORCID: 0000-0003-4816-8905 and Zhao, Cezhou
(2020)
Effect of High-k Passivation Layer on High Voltage Properties of GaN Metal-Insulator-Semiconductor Devices.
IEEE Access, 8.
pp. 95642-95649.
Cai, Yutao, Zhang, Yuanlei, Liang, Ye, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Wen, Huiqing, Liu, Wen and Zhao, Cezhou
(2021)
Low ON-State Resistance Normally-OFF AlGaN/GaN MIS-HEMTs With Partially Recessed Gate and ZrO<i><sub>x</sub></i> Charge Trapping Layer.
IEEE TRANSACTIONS ON ELECTRON DEVICES, 68 (9).
pp. 4310-4316.