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Cai, Yutao, Liu, Wen, Cui, Miao, Sun, Ruize, Liang, Yung C, Wen, Huiqing, Yang, Li, Supardan, Siti N, Mitrovic, Ivona Z 
ORCID: 0000-0003-4816-8905, Taylor, Stephen ORCID: 0000-0002-2144-8459 et al (show 2 more authors)
(2020)
Effect of surface treatment on electrical properties of GaN metal-insulator-semiconductor devices with Al2O3 gate dielectric.
JAPANESE JOURNAL OF APPLIED PHYSICS, 59 (4).
041001-041001.
Wen, Huiqing ORCID: 0000-0002-0169-488X, Liang, Yung C, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Li, Depeng, Tayahi, Moncef, Lu, Fei and Ye, Xianming
(2020)
IEEE Access Special Section: Emerging Technologies for Energy Internet.
IEEE Access, 8.
pp. 213340-213344.
Cui, Miao, Sun, Ruize, Bu, Qinglei, Liu, Wen, Wen, Huiqing, Li, Ang, Liang, Yung C and Zhao, Cezhou
(2019)
Monolithic GaN Half-Bridge Stages With Integrated Gate Drivers for High Temperature DC-DC Buck Converters.
IEEE ACCESS, 7.
pp. 184375-184384.
Cui, Miao, Bu, Qinglei, Cai, Yutao, Sun, Ruize, Liu, Wen, Wen, Huiqing, Lam, Sang, Liang, Yung C, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Taylor, Stephen ORCID: 0000-0002-2144-8459 et al (show 2 more authors)
(2019)
Monolithic Integration Design of GaN-based Power Chip Including Gate Driver for High-Temperature DC-DC Converters.
Japanese Journal of Applied Physics, 58 (5).
056505-056505.
Sun, Zhonghao, Huang, Huolin, Sun, Nan, Tao, Pengcheng, Zhao, Cezhou ORCID: 0000-0002-4933-9692 and Liang, Yung C ORCID: 0000-0002-5716-0713
(2019)
A Novel GaN Metal-Insulator-Semiconductor High Electron Mobility Transistor Featuring Vertical Gate Structure.
Micromachines, 10 (12).
E848-.