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Number of items: 19.


Li, Ang, Shen, Yi, Li, Ziqian, Li, Fan, Sun, Ruize, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Wen, Huiqing, Lam, Sang and Liu, Wen
(2022) A 4-Transistor Monolithic Solution to Highly Linear On-Chip Temperature Sensing in GaN Power Integrated Circuits. IEEE Electron Device Letters, 44 (2). pp. 333-336.


Zhu, Yinxiao
(2023) Advances in Flexible Power Point Tracking Control and Differential Power Processing Technology for Photovoltaic Systems. PhD thesis, University of Liverpool.


Wang, Qinan
(2023) Application of advanced material in flexible fully solution processed thin film transistor. PhD thesis, University of Liverpool.


Cui, Miao, Cai, Yutao, Lam, Sang, Liu, Wen, Zhao, Chun, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Taylor, Stephen ORCID: 0000-0002-2144-8459, Chalker, Paul R ORCID: 0000-0002-2295-6332 and Zhao, Cezhou
(2018) Characterization of Transient Threshold Voltage Shifts in Enhancement- and Depletion-mode AlGaN/GaN Metal-Insulator-Semiconductor (MIS)-HEMTs. In: 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC), 2018-6-6 - 2018-6-8.


Wang, Qinan, Duan, Sixuan, Qin, Jiahao, Sun, Yi, Wei, Shihang, Song, Pengfei, Liu, Wen, Gu, Jiangmin, Yang, Li, Tu, Xin ORCID: 0000-0002-6376-0897
et al (show 2 more authors) (2023) Dynamic residual deep learning with photoelectrically regulated neurons for immunological classification. CELL REPORTS PHYSICAL SCIENCE, 4 (7). p. 101481.


Cai, Yutao, Wang, Yang, Liang, Ye, Zhang, Yuanlei, Liu, Wen, Wen, Huiqing, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905 and Zhao, Cezhou
(2020) Effect of High-k Passivation Layer on High Voltage Properties of GaN Metal-Insulator-Semiconductor Devices. IEEE Access, 8. pp. 95642-95649.


Cai, Yutao, Liu, Wen, Cui, Miao, Sun, Ruize, Liang, Yung C, Wen, Huiqing, Yang, Li, Supardan, Siti N, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Taylor, Stephen ORCID: 0000-0002-2144-8459
et al (show 2 more authors) (2020) Effect of surface treatment on electrical properties of GaN metal-insulator-semiconductor devices with Al2O3 gate dielectric. JAPANESE JOURNAL OF APPLIED PHYSICS, 59 (4). 041001-041001.


Feng, Zhichen, Wen, Huiqing, Bu, Qinglei, Zhu, Yinxiao ORCID: 0000-0003-0192-5286, Han, Xu, Zhou, Jiafeng ORCID: 0000-0001-5829-3932, Lim, Eng Gee ORCID: 0000-0003-0199-7386, Liu, Wen and Hu, Yihua
(2023) Loss Balance and Transient DC-Bias Suppression Strategies in Three-Level DAB Converters Modulated With Five DoFs. IEEE Transactions on Power Electronics, 38 (7). pp. 1-14.


Cai, Yutao, Zhang, Yuanlei, Liang, Ye, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Wen, Huiqing, Liu, Wen and Zhao, Cezhou
(2021) Low ON-State Resistance Normally-OFF AlGaN/GaN MIS-HEMTs With Partially Recessed Gate and ZrO<i><sub>x</sub></i> Charge Trapping Layer. IEEE TRANSACTIONS ON ELECTRON DEVICES, 68 (9). pp. 4310-4316.


Li, Ang, Cui, Miao, Shen, Yi, Li, Ziqian, Liu, Wen, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Wen, Huiqing and Zhao, Cezhou
(2021) Monolithic Comparator and Sawtooth Generator of AlGaN/GaN MIS-HEMTs With Threshold Voltage Modulation for High-Temperature Applications. IEEE TRANSACTIONS ON ELECTRON DEVICES, 68 (6). pp. 2673-2679.


Cui, Miao, Sun, Ruize, Bu, Qinglei, Liu, Wen, Wen, Huiqing, Li, Ang, Liang, Yung C and Zhao, Cezhou
(2019) Monolithic GaN Half-Bridge Stages With Integrated Gate Drivers for High Temperature DC-DC Buck Converters. IEEE ACCESS, 7. pp. 184375-184384.


Cui, Miao, Bu, Qinglei, Cai, Yutao, Sun, Ruize, Liu, Wen, Wen, Huiqing, Lam, Sang, Liang, Yung C, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Taylor, Stephen ORCID: 0000-0002-2144-8459
et al (show 2 more authors) (2019) Monolithic Integration Design of GaN-based Power Chip Including Gate Driver for High-Temperature DC-DC Converters. Japanese Journal of Applied Physics, 58 (5). 056505-056505.


Li, Ang, Shen, Yi, Li, Ziqian, Zhao, Yinchao, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Wen, Huiqing, Lam, Sang and Liu, Wen
(2022) A Monolithically Integrated 2-Transistor Voltage Reference with a Wide Temperature Range Based on AlGaN/GaN Technology. IEEE Electron Device Letters, 43 (3). p. 1.


Li, Ang
(2023) Monolithically Integrated GaN MIS-HEMT Blocks for Power Conversion System. PhD thesis, University of Liverpool.


Wang, Qinan, Zhao, Tianshi, Zhao, Chun, Liu, Wen, Yang, Li, Liu, Yina, Sheng, Dian, Xu, Rongxuan, Ge, Yutong, Tu, Xin ORCID: 0000-0002-6376-0897
et al (show 2 more authors) (2022) Solid‐State Electrolyte Gate Transistor with Ion Doping for Biosignal Classification of Neuromorphic Computing. Advanced Electronic Materials, 8 (7). p. 2101260.


Li, Ang ORCID: 0000-0002-1872-5005, Li, Fan, Chen, Kaiwen, Zhu, Yuhao, Wang, Weisheng, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Wen, Huiqing and Liu, Wen
(2023) A Supply Voltage Insensitive Two-Transistor Temperature Sensor with PTAT/CTAT Outputs based on Monolithic GaN Integrated Circuits. IEEE Transactions on Power Electronics, 38 (9). pp. 1-5.


Wang, Qinan, Zhao, Chun, Sun, Yi, Xu, Rongxuan, Li, Chenran, Wang, Chengbo, Liu, Wen, Gu, Jiangmin, Shi, Yingli, Yang, Li
et al (show 3 more authors) (2023) Synaptic transistor with multiple biological functions based on metal-organic frameworks combined with the LIF model of a spiking neural network to recognize temporal information. MICROSYSTEMS & NANOENGINEERING, 9 (1). 96-.


Wu, Chunfei, Huang, Qi, Xu, Zhicheng, Sipra, Ayesha Tariq, Gao, Ningbo, Vandenberghe, Luciana Porto de Souza, Vieira, Sabrina, Soccol, Carlos Ricardo, Zhao, Ruikai, Deng, Shuai
et al (show 85 more authors) (2023) A comprehensive review of carbon capture science and technologies. Carbon Capture Science &amp; Technology. p. 100178.


Cui, Miao, Zhu, Yuhao, Cao, Pingyu, Li, Ang ORCID: 0000-0002-1872-5005, Bu, Qinglei, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Su, Xujun, Zhao, Yinchao, Wen, Huiqing, Liu, Wen
et al (show 1 more authors) (2023) A monolithic GaN driver with a deadtime generator (DTG) for high‐temperature (HT) GaN DC‐DC buck converters. IET Power Electronics, 16 (9). pp. 1582-1594.

This list was generated on Sun Dec 24 00:45:45 2023 GMT.