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Li, Ang, Shen, Yi, Li, Ziqian, Li, Fan, Sun, Ruize, Mitrovic, Ivona Z 
ORCID: 0000-0003-4816-8905, Wen, Huiqing, Lam, Sang and Liu, Wen
(2022)
A 4-Transistor Monolithic Solution to Highly Linear On-Chip Temperature Sensing in GaN Power Integrated Circuits.
IEEE Electron Device Letters, 44 (2).
pp. 333-336.
Cui, Miao, Cai, Yutao, Lam, Sang, Liu, Wen, Zhao, Chun, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Taylor, Stephen ORCID: 0000-0002-2144-8459, Chalker, Paul R ORCID: 0000-0002-2295-6332 and Zhao, Cezhou
(2018)
Characterization of Transient Threshold Voltage Shifts in Enhancement- and Depletion-mode AlGaN/GaN Metal-Insulator-Semiconductor (MIS)-HEMTs.
In: 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC), 2018-6-6 - 2018-6-8.
Cai, Yutao, Wang, Yang, Liang, Ye, Zhang, Yuanlei, Liu, Wen, Wen, Huiqing, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905 and Zhao, Cezhou
(2020)
Effect of High-k Passivation Layer on High Voltage Properties of GaN Metal-Insulator-Semiconductor Devices.
IEEE Access, 8.
pp. 95642-95649.
Cai, Yutao, Liu, Wen, Cui, Miao, Sun, Ruize, Liang, Yung C, Wen, Huiqing, Yang, Li, Supardan, Siti N, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Taylor, Stephen ORCID: 0000-0002-2144-8459 et al (show 2 more authors)
(2020)
Effect of surface treatment on electrical properties of GaN metal-insulator-semiconductor devices with Al2O3 gate dielectric.
JAPANESE JOURNAL OF APPLIED PHYSICS, 59 (4).
041001-041001.
Feng, Zhichen, Wen, Huiqing, Bu, Qinglei, Zhu, Yinxiao, Han, Xu, Zhou, Jiafeng ORCID: 0000-0001-5829-3932, Lim, Eng Gee ORCID: 0000-0003-0199-7386, Liu, Wen and Hu, Yihua
(2023)
Loss Balance and Transient DC-Bias Suppression Strategies in Three-Level DAB Converters Modulated With Five DoFs.
IEEE Transactions on Power Electronics.
pp. 1-14.
Cai, Yutao, Zhang, Yuanlei, Liang, Ye, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Wen, Huiqing, Liu, Wen and Zhao, Cezhou
(2021)
Low ON-State Resistance Normally-OFF AlGaN/GaN MIS-HEMTs With Partially Recessed Gate and ZrOx Charge Trapping Layer.
IEEE TRANSACTIONS ON ELECTRON DEVICES, 68 (9).
pp. 4310-4316.
Li, Ang, Cui, Miao, Shen, Yi, Li, Ziqian, Liu, Wen, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Wen, Huiqing and Zhao, Cezhou
(2021)
Monolithic Comparator and Sawtooth Generator of AlGaN/GaN MIS-HEMTs With Threshold Voltage Modulation for High-Temperature Applications.
IEEE TRANSACTIONS ON ELECTRON DEVICES, 68 (6).
pp. 2673-2679.
Cui, Miao, Sun, Ruize, Bu, Qinglei, Liu, Wen, Wen, Huiqing, Li, Ang, Liang, Yung C and Zhao, Cezhou
(2019)
Monolithic GaN Half-Bridge Stages With Integrated Gate Drivers for High Temperature DC-DC Buck Converters.
IEEE ACCESS, 7.
pp. 184375-184384.
Cui, Miao, Bu, Qinglei, Cai, Yutao, Sun, Ruize, Liu, Wen, Wen, Huiqing, Lam, Sang, Liang, Yung C, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Taylor, Stephen ORCID: 0000-0002-2144-8459 et al (show 2 more authors)
(2019)
Monolithic Integration Design of GaN-based Power Chip Including Gate Driver for High-Temperature DC-DC Converters.
Japanese Journal of Applied Physics, 58 (5).
056505-056505.
Li, Ang, Shen, Yi, Li, Ziqian, Zhao, Yinchao, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Wen, Huiqing, Lam, Sang and Liu, Wen
(2022)
A Monolithically Integrated 2-Transistor Voltage Reference with a Wide Temperature Range Based on AlGaN/GaN Technology.
IEEE Electron Device Letters, 43 (3).
p. 1.
Wang, Qinan, Zhao, Tianshi, Zhao, Chun, Liu, Wen, Yang, Li, Liu, Yina, Sheng, Dian, Xu, Rongxuan, Ge, Yutong, Tu, Xin ORCID: 0000-0002-6376-0897 et al (show 2 more authors)
(2022)
Solid‐State Electrolyte Gate Transistor with Ion Doping for Biosignal Classification of Neuromorphic Computing.
Advanced Electronic Materials, 8 (7).
p. 2101260.