Up a level |
Wu, Jingjin, Zhao, Yinchao, Zhao, Ce Zhou, Yang, Li, Lu, Qifeng, Zhang, Qian, Smith, Jeremy ORCID: 0000-0002-0212-2365 and Zhao, Yongming
(2016)
Effects of Rapid Thermal Annealing on the Structural, Electrical, and Optical Properties of Zr-Doped ZnO Thin Films Grown by Atomic Layer Deposition.
MATERIALS, 9 (8).
E695-.
Lu, Qifeng, Mu, Yifei, Roberts, Joseph W, Althobaiti, Mohammed, Dhanak, Vinod R ORCID: 0000-0001-8053-654X, Wu, Jingjin, Zhao, Chun, Zhao, Ce Zhou, Zhang, Qian, Yang, Li et al (show 3 more authors)
(2015)
Electrical Properties and Interfacial Studies of Hf<i><sub>x</sub></i>Ti<sub>1-<i>x</i></sub>O<sub>2</sub> High Permittivity Gate Insulators Deposited on Germanium Substrates.
MATERIALS, 8 (12).
pp. 8169-8182.
Wang, Yingyi, Liu, Lin, Shi, Yixiang, Li, Shengzhao, Sun, Fuqin, Lu, Qifeng, Shen, Yaochun ORCID: 0000-0002-8915-1993, Feng, Simin and Qin, Sujie
(2023)
Fast and High-Performance Self-Powered Photodetector Based on the ZnO/Metal-Organic Framework Heterojunction.
ACS applied materials & interfaces, 15 (14).
pp. 18236-18243.
Lu, Qifeng, Zhao, Ce Zhou, Zhao, Chun, Taylor, Steve and Chalker, Paul R ORCID: 0000-0002-2295-6332
(2017)
Investigation of Anomalous Capacitance-Voltage Behavior Caused by Interface Dipoles and the Effect of Post-Metal-Annealing.
In: INTERNATIONAL CONFERENCE “FUNCTIONAL ANALYSIS IN INTERDISCIPLINARY APPLICATIONS” (FAIA2017).
Mu, Yifei, Zhao, Ce Zhou, Qi, Yanfei, Lam, Sang, Zhao, Chun, Lu, Qifeng, Cai, Yutao, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Taylor, Stephen ORCID: 0000-0002-2144-8459 and Chalker, Paul R ORCID: 0000-0002-2295-6332
(2016)
Real-time and on-site γ-ray radiation response testing system for semiconductor devices and its applications.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 372.
pp. 14-28.
Mu, Yifei, Fang, Yuxiao, Zhao, Ce Zhou, Zhao, Chun, Lu, Qifeng, Qi, Yanfei, Yi, Ruowei, Yang, Li, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Taylor, Stephen ORCID: 0000-0002-2144-8459 et al (show 1 more authors)
(2017)
Total Dose Effects and Bias Instabilities of (NH<sub>4</sub>)<sub>2</sub>S Passivated Ge MOS Capacitors With Hf<i><sub>x</sub></i>Zr<sub>1-<i>x</i></sub>O<i><sub>y</sub></i> Thin Films.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 64 (12).
pp. 2913-2921.
Mu, Yifei, Zhao, Ce Zhou, Lu, Qifeng, Zhao, Chun, Qi, Yanfei, Lam, Sang, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Taylor, Stephen ORCID: 0000-0002-2144-8459 and Chalker, Paul R ORCID: 0000-0002-2295-6332
(2017)
Total Ionizing Dose Response of Hafnium-Oxide Based MOS Devices to Low-Dose-Rate Gamma Ray Radiation Observed by Pulse CV and On-Site Measurements.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 64 (1).
pp. 673-682.