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Supardan, SN, Das, P, Shaw, AP, Major, JD, Valizadeh, R, Hannah, A, Chakraborty, AK, Mahapatra, R, Dhanak, VR and Mitrovic, IZ ORCID: 0000-0003-4816-8905 (2018) Band alignment of sputtered Al2O3, MgO and ZrO2 on GaN for MIS-HEMTs. In: UK Nitrides Consortium (UKNC) Winter Conference, 2018-1-10 - 2018-1-11, University of Manchester.

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Supardan, SN, Das, P ORCID: 0000-0003-1147-6541, Major, JD ORCID: 0000-0002-5554-1985, Hannah, A, Zaidi, ZH, Mahapatra, R, Lee, KB, Valizadeh, R, Houston, PA, Hall, S ORCID: 0000-0001-8387-1036 et al (show 2 more authors) , Dhanak, VR and Mitrovic, IZ ORCID: 0000-0003-4816-8905 (2020) Band alignments of sputtered dielectrics on GaN. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 53 (7). 075303-075303.

Paul, AD, Biswas, S, Das, P ORCID: 0000-0003-1147-6541, Edwards, HJ, Dhanak, VR and Mahapatra, R (2020) Effect of Aluminum Doping on Performance of HfOx-Based Flexible Resistive Memory Devices. IEEE TRANSACTIONS ON ELECTRON DEVICES, 67 (10). pp. 4222-4227.

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Sawangsri, K, Das, P ORCID: 0000-0003-1147-6541, Supardan, SN, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Hall, S ORCID: 0000-0001-8387-1036, Mahapatra, R, Chakraborty, AK, Treharne, R, Gibbon, J ORCID: 0000-0003-1548-0791, Dhanak, VR et al (show 2 more authors) , Durose, K ORCID: 0000-0003-1183-3211 and Chalker, PR ORCID: 0000-0002-2295-6332 (2017) Experimental band alignment of Ta2O5/GaN for MIS-HEMT applications. Microelectronic Engineering, 178. pp. 178-181.

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Sawangsri, K, Das, P ORCID: 0000-0003-1147-6541, Supardan, SN, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Hall, S ORCID: 0000-0001-8387-1036, Mahapatra, R, Chakraborty, AK, Treharne, R, Gibbon, J ORCID: 0000-0003-1548-0791, Dhanak, VR et al (show 2 more authors) , Durose, K ORCID: 0000-0003-1183-3211 and Chalker, PR ORCID: 0000-0002-2295-6332 (2017) Experimental band alignment of Ta2O5/GaN for MIS-HEMT applications. In: 20th Conference on "Insulating Films on Semiconductors", 2017-6-27 - 2017-6-30, Potsdam, Germany.

Biswas, S, Paul, AD, Das, P ORCID: 0000-0003-1147-6541, Tiwary, P, Edwards, HJ, Dhanak, VR, Mitrovic, IZ ORCID: 0000-0003-4816-8905 and Mahapatra, R (2021) Impact of AlOy Interfacial Layer on Resistive Switching Performance of Flexible HfOx/AlOy ReRAMs. IEEE TRANSACTIONS ON ELECTRON DEVICES, 68 (8). pp. 3787-3793.

Maji, S, Paul, AD, Das, P ORCID: 0000-0003-1147-6541, Chatterjee, S, Chatterjee, P, Dhanak, VR, Chakraborty, AK and Mahapatra, R (2021) Improved resistive switching performance of graphene oxide-based flexible ReRAM with HfOx buffer layer. Journal of Materials Science: Materials in Electronics, 32 (3). pp. 2936-2945.

Maji, S, Samanta, S, Das, P ORCID: 0000-0003-1147-6541, Maikap, S, Dhanak, VR ORCID: 0000-0001-8053-654X, Mitrovic, IZ ORCID: 0000-0003-4816-8905 and Mahapatra, R (2019) Set compliance current induced resistive memory characteristics of W/Hf/HfOx/TiN devices. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 37 (2). 021204-1-021204-7.

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Supardan, SN, Das, P, Shaw, AP, Major, JD ORCID: 0000-0002-5554-1985, Valizadeh, R, Hannah, A, Chakraborty, AK, Mahapatra, R, Hall, S ORCID: 0000-0001-8387-1036, Dhanak, VR et al (show 1 more authors) and Mitrovic, IZ ORCID: 0000-0003-4816-8905 (2018) Sputtered ZrO2, Al2O3 and MgO on GaN: band alignment and interface study. In: 20th Workshop on Dielectrics in Microelectronics - Wodim 2018, 2018-6-11 - 2018-6-14, Berlin, Germany.