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Zurauskaite, L, Jones, L 
ORCID: 0000-0002-4654-3882, Dhanak, VR ORCID: 0000-0001-8053-654X, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Hellstrom, PE and Ostling, M
(2018)
Investigation of Tm<sub>2</sub>O<sub>3</sub><SUP> </SUP>as a Gate Dielectric for Ge MOS Devices.
SIGE, GE, AND RELATED COMPOUNDS: MATERIALS, PROCESSING, AND DEVICES 8, 86 (7).
pp. 67-73.