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Shen, ZJ, Zhao, C, Zhao, CZ, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Yang, L, Xu, WY, Lim, EG ORCID: 0000-0003-0199-7386, Luo, T and Huang, YB (2019) Al/GO/Si/Al RRAM with Solution-processed GO dielectric at Low Fabrication Temperature. In: 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2019-4-1 - 2019-4-3, Grenoble, France.

Jones, L ORCID: 0000-0002-4654-3882, Gibbon, JT ORCID: 0000-0003-1548-0791, Roberts, JW, Cho, SJ, Thayne, IG, Chalker, PR ORCID: 0000-0002-2295-6332, Dhanak, VR and Mitrovic, IZ ORCID: 0000-0003-4816-8905 (2018) Aluminium doped Ga2O3 for GaN MIS-HEMTs. In: 20th Workshop on Dielectrics in Microelectronics – WODIM 2018, 2018-6-11 - 2018-6-14, Berlin, Germany.

Almalki, S, Tekin, SB, Sedghi, N ORCID: 0000-0002-2004-6159, Hall, S ORCID: 0000-0001-8387-1036 and Mitrovic, IZ ORCID: 0000-0003-4816-8905 (2021) Applicability of Sc₂O₃ versus Al₂O₃ in MIM rectifiers for IR rectenna. SOLID-STATE ELECTRONICS, 184. p. 108082.

Fang, Y, Zhao, C, Hall, S ORCID: 0000-0001-8387-1036, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Xu, W, Yang, L, Zhao, T, Liu, Q and Zhao, Cezhou (2019) Aqueous solution-processed AlOx dielectrics and their biased radiation response investigated by an on-site technique. Radiation Physics and Chemistry, 170. p. 108644.

Shaw, A, Wrench, JS, Jin, JD, Whittles, TJ ORCID: 0000-0002-5154-7511, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Raja, M, Dhanak, VR ORCID: 0000-0001-8053-654X, Chalker, PR ORCID: 0000-0002-2295-6332 and Hall, S ORCID: 0000-0001-8387-1036 (2016) Atomic layer deposition of Nb-doped ZnO for thin film transistors. APPLIED PHYSICS LETTERS, 109 (22). 222103-.

Shaw, AP and Mitrovic, IZ ORCID: 0000-0003-4816-8905 (2018) Atomic layer deposition zinc oxide devices for transparent electronics. PhD thesis, University of Liverpool.

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Mitrovic, IZ ORCID: 0000-0003-4816-8905, Hall, S ORCID: 0000-0001-8387-1036, Althobaiti, M, Hesp, D, Dhanak, V ORCID: 0000-0001-8053-654X, Santoni, A, Weerakkody, D, Sedghi, N ORCID: 0000-0002-2004-6159, Chalker, P ORCID: 0000-0002-2295-6332, Henkel, C et al (show 5 more authors) , Dentoni Litta, E, Hellstrom, P-E, Ostling, M, Tan, H and Schamm-Chardon, S (2015) Atomic-layer deposited thulium oxide as a passivation layer on germanium. Journal of Applied Physics, 117 (21). 214104-.

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Birkett, M ORCID: 0000-0002-6076-6820, Savory, CN, Fioretti, AN, Thompson, P ORCID: 0000-0002-9697-6141, Muryn, CA, Weerakkody, AD, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Hall, S ORCID: 0000-0001-8387-1036, Treharne, R, Dhanak, VR ORCID: 0000-0001-8053-654X et al (show 3 more authors) , Scanlon, DO, Zakutayev, A and Veal, TD ORCID: 0000-0002-0610-5626 (2017) Atypically small temperature-dependence of the direct band gap in the metastable semiconductor copper nitride Cu3N. Physical Review B - Condensed Matter and Materials Physics, 95 (11). 115201-.

Supardan, SN, Das, P, Shaw, AP, Major, JD, Valizadeh, R, Hannah, A, Chakraborty, AK, Mahapatra, R, Dhanak, VR and Mitrovic, IZ ORCID: 0000-0003-4816-8905 (2018) Band alignment of sputtered Al2O3, MgO and ZrO2 on GaN for MIS-HEMTs. In: UK Nitrides Consortium (UKNC) Winter Conference, 2018-1-10 - 2018-1-11, University of Manchester.

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Supardan, SN, Das, P ORCID: 0000-0003-1147-6541, Major, JD ORCID: 0000-0002-5554-1985, Hannah, A, Zaidi, ZH, Mahapatra, R, Lee, KB, Valizadeh, R, Houston, PA, Hall, S ORCID: 0000-0001-8387-1036 et al (show 2 more authors) , Dhanak, VR and Mitrovic, IZ ORCID: 0000-0003-4816-8905 (2020) Band alignments of sputtered dielectrics on GaN. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 53 (7). 075303-075303.

Nemr Noureddine, I, Sedghi, N ORCID: 0000-0002-2004-6159, Mitrovic, IZ ORCID: 0000-0003-4816-8905 and Hall, S ORCID: 0000-0001-8387-1036 (2016) Barrier tuning of atomic layer deposited Ta2O5 and Al2O3 in resonant tunnelling diodes for terahertz applications. In: 19th Workshop on Dielectrics in Microelectronics –WODIM, 2016-6-27 - 2016-6-30, Catania, Italy.

Fang, YX, Zhao, C, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Hall, S ORCID: 0000-0001-8387-1036, Yang, L and Zhao, CZ (2019) Bias-stress stability and radiation response of solution-processed AlO_x dielectrics investigated by on-site measurements. In: Insulating Films on Semiconductors, INFOS 2019, 2019-6-30 - 2019-7-3, Clare College, University of Cambridge, UK.

Fang, YX, Zhao, C, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Hall, S ORCID: 0000-0001-8387-1036, Yang, L and Zhao, CC (2019) Bias-stress stability and radiation response of solution-processed AlOx dielectrics investigated by on-site measurements. Microelectronic Engineering.

Cao, YX, Zhao, C, Liu, ZJ, Chen, XP, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Liu, YN, Yang, L, van Zalinge, H ORCID: 0000-0003-0996-1281 and Zhao, CZ (2022) Bionic artificial synaptic floating gate transistor based on MXene. SOLID-STATE ELECTRONICS, 192. p. 108257.

Shaw, A, Gao, C, Jin, JD, Mitrovic, IZ ORCID: 0000-0003-4816-8905 and Hall, S ORCID: 0000-0001-8387-1036 (2015) Characterisation and Modelling of Mg Doped ZnO TFTs. In: 2015 11th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), 2015-6-29 - 2015-7-2.

Wrench, JS, Brunell, IF, Chalker, PR ORCID: 0000-0002-2295-6332, Jin, JD, Shaw, A, Mitrovic, IZ ORCID: 0000-0003-4816-8905 and Hall, S ORCID: 0000-0001-8387-1036 (2014) Compositional tuning of atomic layer deposited MgZnO for thin film transistors. APPLIED PHYSICS LETTERS, 105 (20). pp. 1-202109.

Weerakkody, AD, Sedghi, N ORCID: 0000-0002-2004-6159, Zhan, X, Mitrovic, IZ ORCID: 0000-0003-4816-8905 and Hall, S ORCID: 0000-0001-8387-1036 (2015) Conduction mechanisms in Al-Ta₂O₅-Al₂O₃-Al rectifiers. In: 2015 11th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), 2015-6-29 - 2015-7-2, University of Glasgow.

Mitrovic, IZ ORCID: 0000-0003-4816-8905, Weerakkody, DADC, Sedghi, N ORCID: 0000-0002-2004-6159, Ralph, Jason F ORCID: 0000-0002-4946-9948, Hall, S ORCID: 0000-0001-8387-1036, Dhanak, VR, Luo, Z and Beeby, S (2018) Controlled modification of resonant tunneling in metal-insulator-insulator-metal structures. Applied Physics Letters, 112 (1).

Shaw, A, Jin, JD, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Hall, S ORCID: 0000-0001-8387-1036, Wrench, JS and Chalker, PR ORCID: 0000-0002-2295-6332 (2016) Controlling the physical and electrical properties of ALD grown ZnO using Nb as a dopant. In: 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2016-1-25 - 2016-1-27.

Sedghi, N ORCID: 0000-0002-2004-6159, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Ralph, JF ORCID: 0000-0002-4946-9948, Chalker, PR ORCID: 0000-0002-2295-6332 and Hall, S ORCID: 0000-0001-8387-1036 (2016) Design of an All-Dielectric Double Barrier Resonant Tunneling Diode for THz Energy Harvesting. In: 3rd International Conference on Nanotechnology, Nanomaterials & Thin Films for Energy Applications - Nanoenergy 2016, 2016-7-27 - 2016-7-29, Liverpool, UK.

Zhao, TS, Zhao, C, Zhao, CZ, Xu, WY, Yang, L, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Hall, S ORCID: 0000-0001-8387-1036, Lim, EG ORCID: 0000-0003-0199-7386 and Yu, SC (2019) Eco-Friendly, Low-temperature Solution-processed InO/AlO Thin-film Transistor with Li-incorporation. In: 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2019-4-1 - 2019-4-3, Grenoble, France.

Mu, Y, Zhao, CZ, Lu, Q, Zhao, C, Qi, Y, Lam, S, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Taylor, S ORCID: 0000-0002-2144-8459 and Chalker, PR ORCID: 0000-0002-2295-6332 (2017) Effects of biased irradiation on charge trapping in HfO<inf>2</inf> dielectric thin films. In: INTERNATIONAL CONFERENCE “FUNCTIONAL ANALYSIS IN INTERDISCIPLINARY APPLICATIONS” (FAIA2017).

Tekin, SB, Almalki, S, Finch, H, Vezzoli, A ORCID: 0000-0002-8059-0113, O'Brien, L ORCID: 0000-0002-0136-8603, Dhanak, VR ORCID: 0000-0001-8053-654X, Hall, S ORCID: 0000-0001-8387-1036 and Mitrovic, IZ ORCID: 0000-0003-4816-8905 (2023) Electron affinity of metal oxide thin films of TiO₂, ZnO, and NiO and their applicability in 28.3 THz rectenna devices. JOURNAL OF APPLIED PHYSICS, 134 (8). 084503-.

Weerakkody, DA (2016) Engineered High-k Oxides. Doctor of Philosophy thesis, University of Liverpool.

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Weerakkody, AD, Sedghi, N ORCID: 0000-0002-2004-6159, Mitrovic, IZ ORCID: 0000-0003-4816-8905, van Zalinge, H ORCID: 0000-0003-0996-1281, Noureddine, I Nemr, Hall, S ORCID: 0000-0001-8387-1036, Wrench, JS, Chalker, PR, Phillips, LJ ORCID: 0000-0001-5181-1565, Treharne, R et al (show 1 more authors) and Durose, K ORCID: 0000-0003-1183-3211 (2015) Enhanced low voltage nonlinearity in resonant tunneling metal-insulator-insulator-metal nanostructures. MICROELECTRONIC ENGINEERING, 147. pp. 298-301.

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Weerakkody, AD, Sedghi, N ORCID: 0000-0002-2004-6159, Mitrovic, IZ ORCID: 0000-0003-4816-8905, van Zalinge, H ORCID: 0000-0003-0996-1281, Nemr Noureddine, I, Hall, S ORCID: 0000-0001-8387-1036, Wrench, JS, Chalker, PR ORCID: 0000-0002-2295-6332, Phillips, LJ ORCID: 0000-0001-5181-1565, Treharne, R et al (show 1 more authors) and Durose, K ORCID: 0000-0003-1183-3211 (2015) Enhanced low voltage nonlinearity in resonant tunneling metal–insulator–insulator–metal nanostructures. , University of Leeds, Leeds, UK.

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Sawangsri, K, Das, P ORCID: 0000-0003-1147-6541, Supardan, SN, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Hall, S ORCID: 0000-0001-8387-1036, Mahapatra, R, Chakraborty, AK, Treharne, R, Gibbon, J ORCID: 0000-0003-1548-0791, Dhanak, VR et al (show 2 more authors) , Durose, K ORCID: 0000-0003-1183-3211 and Chalker, PR ORCID: 0000-0002-2295-6332 (2017) Experimental band alignment of Ta2O5/GaN for MIS-HEMT applications. Microelectronic Engineering, 178. pp. 178-181.

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Sawangsri, K, Das, P ORCID: 0000-0003-1147-6541, Supardan, SN, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Hall, S ORCID: 0000-0001-8387-1036, Mahapatra, R, Chakraborty, AK, Treharne, R, Gibbon, J ORCID: 0000-0003-1548-0791, Dhanak, VR ORCID: 0000-0001-8053-654X et al (show 2 more authors) , Durose, K ORCID: 0000-0003-1183-3211 and Chalker, PR ORCID: 0000-0002-2295-6332 (2017) Experimental band alignment of Ta₂O₅/GaN for MIS-HEMT applications. In: 20th Conference on "Insulating Films on Semiconductors", 2017-6-27 - 2017-6-30, Potsdam, Germany.

Weerakkody, DAD, Sedghi, N ORCID: 0000-0002-2004-6159, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Hall, S ORCID: 0000-0001-8387-1036, Wrench, J, Chalker, PR ORCID: 0000-0002-2295-6332, Zhenhua, L and Beeby, S (2016) Experimental tunnel-barrier rectifiers for IR energy harvesting. In: 3rd International Conference on Nanotechnology, Nanomaterials & Thin Films for Energy Applications - NANOENERGY 2016, 2016-7-27 - 2016-7-29, University of Liverpool.

Shaw, A, Jin, JD, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Hall, S ORCID: 0000-0001-8387-1036, Wrench, JS and Chalker, PR ORCID: 0000-0002-2295-6332 (2017) Extraction of the sub-band gap density of states of Nb doped ZnO thin film transistors using <i>C</i>-<i>V</i> measurements. In: 20th Conference on "Insulating Films on Semiconductors", 2017-6-27 - 2017-6-30, Potsdam, Germany.

Shaw, A, Jin, JD, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Hall, S ORCID: 0000-0001-8387-1036, Wrench, JS and Chalker, PR ORCID: 0000-0002-2295-6332 (2017) Extraction of the sub-band gap density of states of Nb doped ZnO thin film transistors using C-V measurements. Microelectronic Engineering, 178. pp. 213-216.

Noureddine, I Nemr, Sedghi, N ORCID: 0000-0002-2004-6159, Wrench, J, Chalker, P ORCID: 0000-0002-2295-6332, Mitrovic, IZ ORCID: 0000-0003-4816-8905 and Hall, S ORCID: 0000-0001-8387-1036 (2021) Fabrication and modelling of MInM diodes with low turn-on voltage. SOLID-STATE ELECTRONICS, 184 (Oct.). p. 108053.

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Liu, QH, Zhao, C, Zhao, CZ, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Hall, S ORCID: 0000-0001-8387-1036, Xu, WY, Yang, L, Lim, EG ORCID: 0000-0003-0199-7386, Wang, QN, Wei, YL et al (show 1 more authors) and Cao, YX (2019) Fully Solution-Processed Sodium Doped ZnO Thin-Film Transistors via a Low-Temperature Aqueous Route. In: 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2019-4-1 - 2019-4-3, Grenoble, France.

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Mitrovic, IZ ORCID: 0000-0003-4816-8905, Althobaiti, M, Weerakkody, AD, Dhanak, VR ORCID: 0000-0001-8053-654X, Linhart, WM, Veal, TD ORCID: 0000-0002-0610-5626, Sedghi, N ORCID: 0000-0002-2004-6159, Hall, S ORCID: 0000-0001-8387-1036, Chalker, PR ORCID: 0000-0002-2295-6332, Tsoutsou, D et al (show 1 more authors) and Dimoulas, A (2014) Ge interface engineering using ultra-thin La2O3 and Y2O3 films: A study into the effect of deposition temperature. Journal of Applied Physics, 115 (11). 114102: 1-16.

Althobaiti, M ORCID: 0000-0003-4779-0057, Mather, S, Sedghi, N ORCID: 0000-0002-2004-6159, Dhanak, VR, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Hall, S ORCID: 0000-0001-8387-1036 and Chalker, PR ORCID: 0000-0002-2295-6332 (2015) Hafnia and alumina on sulphur passivated germanium. Vacuum, 122. pp. 306-309.

Nemr Noureddine, I, Sedghi, N ORCID: 0000-0002-2004-6159, Mitrovic, IZ ORCID: 0000-0003-4816-8905 and Hall, S ORCID: 0000-0001-8387-1036 (2016) High speed rectifiers for coupling efficiency enhancement in THz rectenna scavengers. In: 3rd International Conference on Nanotechnology, Nanomaterials & Thin Films for Energy Applications - Nanoenergy 2016, 2016-7-27 - 2016-7-29, University of Liverpool.

Biswas, S, Paul, AD, Das, P ORCID: 0000-0003-1147-6541, Tiwary, P, Edwards, HJ, Dhanak, VR ORCID: 0000-0001-8053-654X, Mitrovic, IZ ORCID: 0000-0003-4816-8905 and Mahapatra, R (2021) Impact of AlO<i>_y</i> Interfacial Layer on Resistive Switching Performance of Flexible HfO<i>_x</i>/AlO<i>_y</i> ReRAMs. IEEE TRANSACTIONS ON ELECTRON DEVICES, 68 (8). pp. 3787-3793.

Qi, YF, Zhao, CZ, Zhao, C, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Xu, WY, Yang, L, Shen, ZJ and He, JH (2019) Improved Resistive Switching Behavior in Solution-processed AlO_x based RRAM. In: 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2019-4-1 - 2019-4-3, Grenoble, France.

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Mitrovic, IZ ORCID: 0000-0003-4816-8905, Althobaiti, M, Weerakkody, AD, Sedghi, N ORCID: 0000-0002-2004-6159, Hall, S ORCID: 0000-0001-8387-1036, Dhanak, VR, Mather, S, Chalker, PR ORCID: 0000-0002-2295-6332, Tsoutsou, D, Dimoulas, A et al (show 4 more authors) , Henkel, C, Litta, E Dentoni, Hellstrom, P-E and Ostling, M (2014) Interface Engineering Routes for a Future CMOS Ge-based Technology. DIELECTRICS FOR NANOSYSTEMS 6: MATERIALS SCIENCE, PROCESSING, RELIABILITY, AND MANUFACTURING, 61 (2). pp. 73-88.

Zurauskaite, L, Jones, L ORCID: 0000-0002-4654-3882, Dhanak, VR ORCID: 0000-0001-8053-654X, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Hellstrom, PE and Ostling, M (2018) Investigation of Tm₂O₃<SUP> </SUP>as a Gate Dielectric for Ge MOS Devices. SIGE, GE, AND RELATED COMPOUNDS: MATERIALS, PROCESSING, AND DEVICES 8, 86 (7). pp. 67-73.

Sedghi, N ORCID: 0000-0002-2004-6159, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Ralph, JF ORCID: 0000-0002-4946-9948, Chalker, PR ORCID: 0000-0002-2295-6332 and Hall, S ORCID: 0000-0001-8387-1036 (2016) Low Voltage Rectification in Resonant Tunneling Diodes for Use in THz Energy Harvesting. In: 3rd International Conference on Nanotechnology, Nanomaterials & Thin Films for Energy Applications - Nanoenergy 2016, 2016-7-27 - 2016-7-29, Liverpool University.

Phillips, LJ ORCID: 0000-0001-5181-1565, Rashed, AM, Treharne, RE, Kay, J, Yates, P, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Weerakkody, A, Hall, S ORCID: 0000-0001-8387-1036 and Durose, K ORCID: 0000-0003-1183-3211 (2016) Maximizing the optical performance of planar CH3NH3PbI3 hybrid perovskite heterojunction stacks. Solar Energy Materials and Solar Cells, 147. pp. 327-333.

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Cui, Miao, Bu, Qinglei, Cai, Yutao, Sun, Ruize, Liu, Wen, Wen, Huiqing, Lam, Sang, Liang, Yung C, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Taylor, Stephen ORCID: 0000-0002-2144-8459 et al (show 2 more authors) , Chalker, PR ORCID: 0000-0002-2295-6332 and Zhao, Cezhou (2019) Monolithic Integration Design of GaN-based Power Chip Including Gate Driver for High-Temperature DC-DC Converters. Japanese Journal of Applied Physics, 58 (5). 056505-056505.

Wrench, JS, Chalker, PR ORCID: 0000-0002-2295-6332, Jin, J, Shaw, AS, Mitrovic, IZ ORCID: 0000-0003-4816-8905 and Hall, S ORCID: 0000-0001-8387-1036 (2016) Nb doped ZnO with enhanced physical and electrical properties for TFTs. In: 16th International Atomic Layer Deposition Conference, 2016-7-24 - 2016-7-27, Dublin, Ireland.

Shaw, A, Whittles, TJ ORCID: 0000-0002-5154-7511, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Jin, JD, Wrench, JS, Hesp, D, Dhanak, VR, Chalker, PR ORCID: 0000-0002-2295-6332 and Hall, S ORCID: 0000-0001-8387-1036 (2015) Physical and Electrical Characterization of Mg-Doped ZnO Thin-Film Transistors. In: ESSDERC 2015 - 45th European Solid-State Device Research Conference, 2015-9-14 - 2015-9-18, Graz, Austria.

Supardan, S, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Hesp, D, Dhanak, VR, Hall, S ORCID: 0000-0001-8387-1036, Schamm-Chardon, S, Dentoni Litta, E, Hellstrom, P-E and Ostling, M (2016) Rare-earth oxide interfacial layer for sub-nm EOT CMOS technology. In: 3rd International Conference on Nanotechnology, Nanomaterials and Thin Films for Energy Applications, 2016-7-27 - 2016-7-29, University of Liverpool.

Mu, Y, Zhao, CZ, Qi, Y, Lam, S, Zhao, C, Lu, Q, Cai, Y, Mitrovic, IZ, Taylor, S and Chalker, PR (2016) Real-time and on-site γ-ray radiation response testing system for semiconductor devices and its applications. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 372. 14 - 28. ISSN 0168-583X

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Qi, YF, Shen, ZJ, Zhao, Chun, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Xu, WY, Lim, EG ORCID: 0000-0003-0199-7386, Yang, L, He, JH, Luo, T, Huang, YB et al (show 1 more authors) and Zhao, Ce Zhou (2020) Resistive switching behavior of solution-processed AlO_x and GO based RRAM at low temperature. SOLID-STATE ELECTRONICS, 168. p. 107735.

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Jin, J, Wrench, J, Gibbon, JT ORCID: 0000-0003-1548-0791, Hesp, D, Shaw, AP, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Sedghi, N ORCID: 0000-0002-2004-6159, Phillips, LJ ORCID: 0000-0001-5181-1565, Zou, J, Dhanak, VR ORCID: 0000-0001-8053-654X et al (show 2 more authors) , Chalker, PR ORCID: 0000-0002-2295-6332 and Hall, S ORCID: 0000-0001-8387-1036 (2017) Schottky Diodes on ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition. IEEE Transactions on Electron Devices, 64 (3). pp. 1225-1230.

Maji, S, Samanta, S, Das, P ORCID: 0000-0003-1147-6541, Maikap, S, Dhanak, VR ORCID: 0000-0001-8053-654X, Mitrovic, IZ ORCID: 0000-0003-4816-8905 and Mahapatra, R (2019) Set compliance current induced resistive memory characteristics of W/Hf/HfOx/TiN devices. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 37 (2). 021204-1-021204-7.

Tekin, Serdar, Das, P, Weerakkody, AD, Sedghi, Naser ORCID: 0000-0002-2004-6159, Hall, S ORCID: 0000-0001-8387-1036, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Werner, M, Wrench, JS and Chalker, PR ORCID: 0000-0002-2295-6332 (2021) Single and Triple Insulator Metal-Insulator-Metal Diodes for Infrared Rectennas. Solid-State Electronics, 185. p. 108096.

Tekin, SB, Das, P, Weerakkody, AD, Sedghi, N ORCID: 0000-0002-2004-6159, Hall, S ORCID: 0000-0001-8387-1036, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Werner, M, Wrench, JS and Chalker, PR ORCID: 0000-0002-2295-6332 (2020) Single and Triple Insulator Tunnel Rectifiers for Infrared Energy Harvesting. In: 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2020-9-1 - 2020-9-30, Caen, Normandy, France.

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Supardan, SN, Das, P, Shaw, AP, Major, JD ORCID: 0000-0002-5554-1985, Valizadeh, R, Hannah, A, Chakraborty, AK, Mahapatra, R, Hall, S ORCID: 0000-0001-8387-1036, Dhanak, VR et al (show 1 more authors) and Mitrovic, IZ ORCID: 0000-0003-4816-8905 (2018) Sputtered ZrO2, Al2O3 and MgO on GaN: band alignment and interface study. In: 20th Workshop on Dielectrics in Microelectronics - Wodim 2018, 2018-6-11 - 2018-6-14, Berlin, Germany.

Mitrovic, IZ ORCID: 0000-0003-4816-8905, Supardan, SN, Hesp, D, Dhanak, VR, Hall, S ORCID: 0000-0001-8387-1036, Schamm-Chardon, S, Dentoni Litta, E, Hellstrom, P-E and Ostling, M (2016) Structure of the interface in sub-nm EOT TmSiO/HfO2 gate stack. In: 19th Workshop on Dielectrics in Microelectronics –WODIM 2016, 2016-6-27 - 2016-6-30, Catania, Italy.

Wang, QN, Zhao, C, Liu, W, Mitrovic, IZ ORCID: 0000-0003-4816-8905, van Zalinge, H ORCID: 0000-0003-0996-1281, Liu, YN and Zhao, CZ (2022) Synaptic transistors based on transparent oxide for neural image recognition. SOLID-STATE ELECTRONICS, 194. p. 108342.

Mu, Y (2017) Total Ionizing Dose Response of High-k Dielectrics on MOS Devices. Doctor of Philosophy thesis, University of Liverpool.

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