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Number of items: 8.


Partida-Manzanera, T, Zaidi, ZH, Roberts, JW, Dolmanan, SB, Lee, KB, Houston, PA, Chalker, PR ORCID: 0000-0002-2295-6332, Tripathy, S and Potter, RJ ORCID: 0000-0003-0896-4536
(2019) Comparison of atomic layer deposited Al<sub>2</sub>O<sub>3</sub> and (Ta<sub>2</sub>O<sub>5</sub>)<sub>0.12</sub>(Al<sub>2</sub>O<sub>3</sub>)<sub>0.88</sub> gate dielectrics on the characteristics of GaN-capped AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors. JOURNAL OF APPLIED PHYSICS, 126 (3). 034102-034102.


Sedghi, N ORCID: 0000-0002-2004-6159, Li, H, Brunell, IF, Dawson, K ORCID: 0000-0003-3249-8328, Guo, Y, Potter, RJ ORCID: 0000-0003-0896-4536, Gibbon, JT ORCID: 0000-0003-1548-0791, Dhanak, VR, Zhang, WD, Zhang, JF
et al (show 3 more authors) (2017) Enhanced Switching Stability in Ta2O5 Resistive RAM by Fluorine Doping. Applied Physics Letters, 111 (9). 092904-092904.


King, Peter
Hafnium oxide-based dielectrics by atomic layer deposition. Doctor of Philosophy thesis, University of Liverpool.


Forster, M ORCID: 0000-0002-8077-7690, Potter, RJ ORCID: 0000-0003-0896-4536, Yang, Y, Li, Y and Cowan, AJ ORCID: 0000-0001-9032-3548
(2018) Stable Ta2O5 Overlayers on Hematite for Enhanced Photoelectrochemical Water Splitting Efficiencies. ChemPhotoChem, 2 (3). pp. 183-189.


Lane, D, Hodgson, PD, Potter, RJ ORCID: 0000-0003-0896-4536, Beanland, R and Hayne, M
(2021) ULTRARAM: Toward the Development of a III-V Semiconductor, Nonvolatile, Random Access Memory. IEEE Transactions on Electron Devices, 68 (5). pp. 1-4.


Chalker, PR ORCID: 0000-0002-2295-6332, Marshall, PA, Dawson, K ORCID: 0000-0003-3249-8328, Brunell, IF, Sutcliffe, CJ and Potter, RJ ORCID: 0000-0003-0896-4536
(2015) Vacuum ultraviolet photochemical selectivearea atomic layer deposition of Al2O3 dielectrics. AIP Advances, 5 (1). 017115-017115.


Golrokhi, Z, Marshall, PA, Romani, S, Rushworth, S, Chalker, PR ORCID: 0000-0002-2295-6332 and Potter, RJ ORCID: 0000-0003-0896-4536
(2017) The influence of tertiary butyl hydrazine as a co-reactant on the atomic layer deposition of silver. Applied Surface Science, 399. pp. 123-131.


Sedghi, N ORCID: 0000-0002-2004-6159, Li, H, Brunell, IF, Dawson, K ORCID: 0000-0003-3249-8328, Potter, RJ ORCID: 0000-0003-0896-4536, Guo, Y, Gibbon, JT ORCID: 0000-0003-1548-0791, Dhanak, VR, Zhang, WD, Zhang, JF
et al (show 3 more authors) (2017) The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM. Applied Physics Letters, 110 (10). 102902-1-102902-4.

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