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Number of items: 6.


Partida-Manzanera, T, Zaidi, ZH, Roberts, JW, Dolmanan, SB, Lee, KB, Houston, PA, Chalker, PR ORCID: 0000-0002-2295-6332, Tripathy, S and Potter, RJ ORCID: 0000-0003-0896-4536
(2019) Comparison of atomic layer deposited Al2O3 and (Ta2O5)(0.12)(Al2O3)(0.88) gate dielectrics on the characteristics of GaN-capped AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors. JOURNAL OF APPLIED PHYSICS, 126 (3).


Sedghi, N ORCID: 0000-0002-2004-6159, Li, H, Brunell, IF, Dawson, K ORCID: 0000-0003-3249-8328, Guo, Y, Potter, RJ ORCID: 0000-0003-0896-4536, Gibbon, JT ORCID: 0000-0003-1548-0791, Dhanak, VR, Zhang, WD, Zhang, JF
et al (show 3 more authors) (2017) Enhanced switching stability in Ta2O5 resistive RAM by fluorine doping. APPLIED PHYSICS LETTERS, 111 (9).


King, P
(2000) Hafnium oxide-based dielectrics by atomic layer deposition. [Unspecified]


Chalker, PR ORCID: 0000-0002-2295-6332, Marshall, PA, Dawson, K ORCID: 0000-0003-3249-8328, Sutcliffe, CJ, Brunell, IF, Sedghi, N ORCID: 0000-0002-2004-6159, Hall, S ORCID: 0000-0001-8387-1036 and Potter, RJ ORCID: 0000-0003-0896-4536
(2015) (Invited) Vacuum Ultraviolet Photochemical Atomic Layer Deposition of Alumina and Titania Films. ECS Transactions, 69 (7). 139 - 145.


Chalker, PR ORCID: 0000-0002-2295-6332, Marshall, PA, Dawson, K ORCID: 0000-0003-3249-8328, Brunell, IF, Sutcliffe, CJ and Potter, RJ ORCID: 0000-0003-0896-4536
(2015) Vacuum ultraviolet photochemical selective area atomic layer deposition of Al2O3 dielectrics. AIP ADVANCES, 5 (1).


Sedghi, N ORCID: 0000-0002-2004-6159, Li, H, Brunell, IF, Dawson, K ORCID: 0000-0003-3249-8328, Potter, RJ ORCID: 0000-0003-0896-4536, Guo, Y, Gibbon, JT ORCID: 0000-0003-1548-0791, Dhanak, VR, Zhang, WD, Zhang, JF
et al (show 3 more authors) (2017) The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM. APPLIED PHYSICS LETTERS, 110 (10).

This list was generated on Tue Nov 5 13:12:04 2019 GMT.