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Number of items: 7.


Partida-Manzanera, T, Zaidi, ZH, Roberts, JW, Dolmanan, SB, Lee, KB, Houston, PA, Chalker, PR ORCID: 0000-0002-2295-6332, Tripathy, S and Potter, RJ ORCID: 0000-0003-0896-4536
(2019) Comparison of atomic layer deposited Al2O3 and (Ta2O5)(0.12)(Al2O3)(0.88) gate dielectrics on the characteristics of GaN-capped AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors. JOURNAL OF APPLIED PHYSICS, 126 (3).


Whittles, TJ ORCID: 0000-0002-5154-7511, Veal, TD ORCID: 0000-0002-0610-5626, Savory, CN, Welch, AW, de Souza Lucas, FW, Gibbon, JT ORCID: 0000-0003-1548-0791, Birkett, M ORCID: 0000-0002-6076-6820, Potter, RJ ORCID: 0000-0003-0896-4536, Scanlon, DO, Zakutayev, A
et al (show 1 more authors) (2017) Core-Levels, Band Alignments, and Valence Band States in CuSbS2 for Solar Cell Applications. ACS Applied Materials and Interfaces, 9 (48). 41916 - 41926.


Sedghi, N ORCID: 0000-0002-2004-6159, Li, H, Brunell, IF, Dawson, K ORCID: 0000-0003-3249-8328, Guo, Y, Potter, RJ ORCID: 0000-0003-0896-4536, Gibbon, JT ORCID: 0000-0003-1548-0791, Dhanak, VR, Zhang, WD, Zhang, JF
et al (show 3 more authors) (2017) Enhanced switching stability in Ta2O5 resistive RAM by fluorine doping. APPLIED PHYSICS LETTERS, 111 (9).


King, Peter
Hafnium oxide-based dielectrics by atomic layer deposition. [Unspecified]


Chalker, PR ORCID: 0000-0002-2295-6332, Marshall, PA, Dawson, K ORCID: 0000-0003-3249-8328, Sutcliffe, CJ, Brunell, IF, Sedghi, N ORCID: 0000-0002-2004-6159, Hall, S ORCID: 0000-0001-8387-1036 and Potter, RJ ORCID: 0000-0003-0896-4536
(2015) (Invited) Vacuum Ultraviolet Photochemical Atomic Layer Deposition of Alumina and Titania Films. ECS Transactions, 69 (7). 139 - 145.


Chalker, PR ORCID: 0000-0002-2295-6332, Marshall, PA, Dawson, K ORCID: 0000-0003-3249-8328, Brunell, IF, Sutcliffe, CJ and Potter, RJ ORCID: 0000-0003-0896-4536
(2015) Vacuum ultraviolet photochemical selectivearea atomic layer deposition of Al2O3 dielectrics. AIP Advances, 5 (1).


Sedghi, N ORCID: 0000-0002-2004-6159, Li, H, Brunell, IF, Dawson, K ORCID: 0000-0003-3249-8328, Potter, RJ ORCID: 0000-0003-0896-4536, Guo, Y, Gibbon, JT ORCID: 0000-0003-1548-0791, Dhanak, VR, Zhang, WD, Zhang, JF
et al (show 3 more authors) (2017) The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM. Applied Physics Letters, 110 (10). 102902-1 - 102902-4.

This list was generated on Wed May 13 03:28:55 2020 BST.