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Qi, YF, Zhao, CZ, Zhao, C, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Xu, WY, Yang, L, Shen, ZJ and He, JH
(2019) Improved resistive switching behavior in solution-processed AlOx based RRAM. In: EUROSOI-ULIS 2019, 2019-04-01 - 2019-04-03, Grenoble, France.


Qi, YF, Shen, ZJ, Zhao, Chun, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Xu, WY, Lim, EG, Yang, L, He, JH, Luo, T, Huang, YB
et al (show 1 more authors) (2019) Resistive switching behavior of solution-processed AlOx and GO based RRAM at low temperature. Solid-State Electronics. 107735 - 107735.

This list was generated on Thu Apr 9 02:47:38 2020 BST.