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Number of items: 2.
Qi, YF, Zhao, CZ, Zhao, C, Mitrovic, IZ 
ORCID: 0000-0003-4816-8905, Xu, WY, Yang, L, Shen, ZJ and He, JH
(2019)
Improved Resistive Switching Behavior in Solution-processed AlOx based RRAM.
In: 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2019-4-1 - 2019-4-3, Grenoble, France.
Qi, YF, Shen, ZJ, Zhao, Chun, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Xu, WY, Lim, EG ORCID: 0000-0003-0199-7386, Yang, L, He, JH, Luo, T, Huang, YB et al (show 1 more authors)
(2020)
Resistive switching behavior of solution-processed AlOx and GO based RRAM at low temperature.
SOLID-STATE ELECTRONICS, 168.
p. 107735.