 | Up a level |
Number of items: 2.
Qi, YF, Zhao, CZ, Zhao, C, Mitrovic, IZ 
ORCID: 0000-0003-4816-8905, Xu, WY, Yang, L, Shen, ZJ and He, JH
(2019)
Improved resistive switching behavior in solution-processed AlOx based RRAM.
In: EUROSOI-ULIS 2019, 2019-04-01 - 2019-04-03, Grenoble, France.
Qi, YF, Shen, ZJ, Zhao, Chun, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Xu, WY, Lim, EG, Yang, L, He, JH, Luo, T, Huang, YB et al (show 1 more authors)
(2019)
Resistive switching behavior of solution-processed AlOx and GO based RRAM at low temperature.
Solid-State Electronics.
107735 - 107735.