Browse by People

Qi, YF, Zhao, CZ, Zhao, C, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Xu, WY, Yang, L, Shen, ZJ, He, JH and IEEE, (2019) Improved Resistive Switching Behavior in Solution-processed AlOx based RRAM. .

Collapse authors list.
Qi, YF, Shen, ZJ, Zhao, Chun, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Xu, WY, Lim, EG ORCID: 0000-0003-0199-7386, Yang, L, He, JH, Luo, T, Huang, YB et al (show 1 more authors) and Zhao, Ce Zhou (2020) Resistive switching behavior of solution-processed AlOx and GO based RRAM at low temperature. SOLID-STATE ELECTRONICS, 168.