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Number of items: 9.


Shen, Zongjie, Zhao, Chun, Qi, Yanfei, Xu, Wangying, Liu, Yina, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Yang, Li and Zhao, Cezhou
(2020) Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application. NANOMATERIALS, 10 (8). E1437-.


Shen, Zongjie, Zhao, Chun, Zhao, Tianshi, Xu, Wangying, Liu, Yina, Qi, Yanfei, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Yang, Li ORCID: 0000-0002-1040-4223 and Zhao, Ce Zhou
(2021) Artificial Synaptic Performance with Learning Behavior for Memristor Fabricated with Stacked Solution-Processed Switching Layers. ACS Applied Electronic Materials, 3 (3). pp. 1288-1300.


Shen, Zongjie, Qi, Yanfei, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Zhao, Cezhou, Hall, Steve ORCID: 0000-0001-8387-1036, Yang, Li, Luo, Tian, Huang, Yanbo and Zhao, Chun
(2019) Effect of Annealing Temperature for Ni/AlO<sub>x</sub>/Pt RRAM Devices Fabricated with Solution-Based Dielectric. MICROMACHINES, 10 (7). E446-.


Shen, Zongjie, Qi, Yanfei, Mitrovic, Ivona Z, Zhao, Cezhou ORCID: 0000-0002-4783-960X, Hall, Steve, Yang, Li, Luo, Tian, Huang, Yanbo and Zhao, Chun ORCID: 0000-0002-4783-960X
(2019) Effect of Annealing Temperature for Ni/AlOx/Pt RRAM Devices Fabricated with Solution-Based Dielectric. Micromachines, 10 (7).


Shen, Zongjie, Zhao, Chun, Qi, Yanfei, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Yang, Li, Wen, Jiacheng, Huang, Yanbo, Li, Puzhuo and Zhao, Cezhou
(2020) Memristive Non-Volatile Memory Based on Graphene Materials. MICROMACHINES, 11 (4). E341-.


Shen, Zongjie, Zhao, Chun, Liu, Yina, Qi, Yanfei, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Yang, Li ORCID: 0000-0002-1040-4223 and Zhao, Cezhou
(2021) Performance variation of solution-processed memristor induced by different top electrode. SOLID-STATE ELECTRONICS, 186. p. 108132.


Mu, Yifei, Zhao, Ce Zhou, Qi, Yanfei, Lam, Sang, Zhao, Chun, Lu, Qifeng, Cai, Yutao, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Taylor, Stephen ORCID: 0000-0002-2144-8459 and Chalker, Paul R ORCID: 0000-0002-2295-6332
(2016) Real-time and on-site γ-ray radiation response testing system for semiconductor devices and its applications. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 372. pp. 14-28.


Mu, Yifei, Fang, Yuxiao, Zhao, Ce Zhou, Zhao, Chun, Lu, Qifeng, Qi, Yanfei, Yi, Ruowei, Yang, Li, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Taylor, Stephen ORCID: 0000-0002-2144-8459
et al (show 1 more authors) (2017) Total Dose Effects and Bias Instabilities of (NH<sub>4</sub>)<sub>2</sub>S Passivated Ge MOS Capacitors With Hf<i><sub>x</sub></i>Zr<sub>1-<i>x</i></sub>O<i><sub>y</sub></i> Thin Films. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 64 (12). pp. 2913-2921.


Mu, Yifei, Zhao, Ce Zhou, Lu, Qifeng, Zhao, Chun, Qi, Yanfei, Lam, Sang, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Taylor, Stephen ORCID: 0000-0002-2144-8459 and Chalker, Paul R ORCID: 0000-0002-2295-6332
(2017) Total Ionizing Dose Response of Hafnium-Oxide Based MOS Devices to Low-Dose-Rate Gamma Ray Radiation Observed by Pulse CV and On-Site Measurements. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 64 (1). pp. 673-682.

This list was generated on Sat May 4 07:11:33 2024 BST.