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Number of items: 5.


Shen, Zongjie, Qi, Yanfei, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Zhao, Cezhou, Hall, Steve ORCID: 0000-0001-8387-1036, Yang, Li, Luo, Tian, Huang, Yanbo and Zhao, Chun
(2019) Effect of Annealing Temperature for Ni/AlOx/Pt RRAM Devices Fabricated with Solution-Based Dielectric. MICROMACHINES, 10 (7).


Shen, Zongjie, Qi, Yanfei, Mitrovic, Ivona Z, Zhao, Cezhou ORCID: 0000-0002-4783-960X, Hall, Steve, Yang, Li, Luo, Tian, Huang, Yanbo and Zhao, Chun ORCID: 0000-0002-4783-960X
(2019) Effect of Annealing Temperature for Ni/AlOx/Pt RRAM Devices Fabricated with Solution-Based Dielectric. Micromachines, 10 (7).


Mu, Yifei, Zhao, Ce Zhou, Qi, Yanfei, Lam, Sang, Zhao, Chun, Lu, Qifeng, Cai, Yutao, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Taylor, Stephen ORCID: 0000-0002-2144-8459 and Chalker, Paul R ORCID: 0000-0002-2295-6332
(2016) Real-time and on-site gamma-ray radiation response testing system for semiconductor devices and its applications. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 372. 14 - 28.


Mu, Yifei, Fang, Yuxiao, Zhao, Ce Zhou, Zhao, Chun, Lu, Qifeng, Qi, Yanfei, Yi, Ruowei, Yang, Li, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Taylor, Stephen ORCID: 0000-0002-2144-8459
et al (show 1 more authors) (2017) Total Dose Effects and Bias Instabilities of (NH4)(2)S Passivated Ge MOS Capacitors With HfxZr1-xOy Thin Films. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 64 (12). 2913 - 2921.


Mu, Yifei, Zhao, Ce Zhou, Lu, Qifeng, Zhao, Chun, Qi, Yanfei, Lam, Sang, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Taylor, Stephen ORCID: 0000-0002-2144-8459 and Chalker, Paul R ORCID: 0000-0002-2295-6332
(2017) Total Ionizing Dose Response of Hafnium-Oxide Based MOS Devices to Low-Dose-Rate Gamma Ray Radiation Observed by Pulse CV and On-Site Measurements. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 64 (1). 673 - 682.

This list was generated on Tue Feb 25 01:21:01 2020 GMT.