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Shen, Zongjie, Zhao, Chun, Qi, Yanfei, Xu, Wangying, Liu, Yina, Mitrovic, Ivona Z 
ORCID: 0000-0003-4816-8905, Yang, Li and Zhao, Cezhou
(2020)
Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application.
NANOMATERIALS, 10 (8).
E1437-.
Shen, Zongjie, Zhao, Chun, Zhao, Tianshi, Xu, Wangying, Liu, Yina, Qi, Yanfei, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Yang, Li ORCID: 0000-0002-1040-4223 and Zhao, Ce Zhou
(2021)
Artificial Synaptic Performance with Learning Behavior for Memristor Fabricated with Stacked Solution-Processed Switching Layers.
ACS Applied Electronic Materials, 3 (3).
pp. 1288-1300.
Shen, Zongjie, Qi, Yanfei, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Zhao, Cezhou, Hall, Steve ORCID: 0000-0001-8387-1036, Yang, Li, Luo, Tian, Huang, Yanbo and Zhao, Chun
(2019)
Effect of Annealing Temperature for Ni/AlO<sub>x</sub>/Pt RRAM Devices Fabricated with Solution-Based Dielectric.
MICROMACHINES, 10 (7).
E446-.
Shen, Zongjie, Qi, Yanfei, Mitrovic, Ivona Z, Zhao, Cezhou ORCID: 0000-0002-4783-960X, Hall, Steve, Yang, Li, Luo, Tian, Huang, Yanbo and Zhao, Chun ORCID: 0000-0002-4783-960X
(2019)
Effect of Annealing Temperature for Ni/AlOx/Pt RRAM Devices Fabricated with Solution-Based Dielectric.
Micromachines, 10 (7).
Shen, Zongjie, Zhao, Chun, Qi, Yanfei, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Yang, Li, Wen, Jiacheng, Huang, Yanbo, Li, Puzhuo and Zhao, Cezhou
(2020)
Memristive Non-Volatile Memory Based on Graphene Materials.
MICROMACHINES, 11 (4).
E341-.
Shen, Zongjie, Zhao, Chun, Liu, Yina, Qi, Yanfei, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Yang, Li ORCID: 0000-0002-1040-4223 and Zhao, Cezhou
(2021)
Performance variation of solution-processed memristor induced by different top electrode.
SOLID-STATE ELECTRONICS, 186.
p. 108132.
Mu, Yifei, Zhao, Ce Zhou, Qi, Yanfei, Lam, Sang, Zhao, Chun, Lu, Qifeng, Cai, Yutao, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Taylor, Stephen ORCID: 0000-0002-2144-8459 and Chalker, Paul R ORCID: 0000-0002-2295-6332
(2016)
Real-time and on-site γ-ray radiation response testing system for semiconductor devices and its applications.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 372.
pp. 14-28.
Mu, Yifei, Fang, Yuxiao, Zhao, Ce Zhou, Zhao, Chun, Lu, Qifeng, Qi, Yanfei, Yi, Ruowei, Yang, Li, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Taylor, Stephen ORCID: 0000-0002-2144-8459 et al (show 1 more authors)
(2017)
Total Dose Effects and Bias Instabilities of (NH<sub>4</sub>)<sub>2</sub>S Passivated Ge MOS Capacitors With Hf<i><sub>x</sub></i>Zr<sub>1-<i>x</i></sub>O<i><sub>y</sub></i> Thin Films.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 64 (12).
pp. 2913-2921.
Mu, Yifei, Zhao, Ce Zhou, Lu, Qifeng, Zhao, Chun, Qi, Yanfei, Lam, Sang, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Taylor, Stephen ORCID: 0000-0002-2144-8459 and Chalker, Paul R ORCID: 0000-0002-2295-6332
(2017)
Total Ionizing Dose Response of Hafnium-Oxide Based MOS Devices to Low-Dose-Rate Gamma Ray Radiation Observed by Pulse CV and On-Site Measurements.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 64 (1).
pp. 673-682.