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Number of items: 10.


Jones, Leanne, Xing, Zongda, Swallow, Jack, Shiel, Huw, Featherstone, Thomas, Smiles, Matthew ORCID: 0000-0003-2530-5647, Fleck, Nicole, Thakur, Pardeep, Lee, Tien-Lin, Hardwick, Laurence ORCID: 0000-0001-8796-685X
et al (show 4 more authors) (2022) Band Alignments, Electronic Structure, and Core-Level Spectra of Bulk Molybdenum Dichalcogenides (MoS2, MoSe2, and MoTe2). The Journal of Physical Chemistry C: Energy Conversion and Storage, Optical and Electronic Devices, Interfaces, Nanomaterials, and Hard Matter, 126 (49). pp. 21022-21033.


Jackson, Adam J, Parrett, Benjamin J, Willis, Joe, Ganose, Alex M, Leung, WW Winnie, Liu, Yuhan, Williamson, Benjamin AD, Kim, Timur K, Hoesch, Moritz, Veiga, Larissa SI
et al (show 10 more authors) (2022) Computational Prediction and Experimental Realization of Earth-Abundant Transparent Conducting Oxide Ga-Doped ZnSb2O6. ACS ENERGY LETTERS, 7 (11). pp. 3807-3816.


Wahila, Matthew J, Paez, Galo, Singh, Christopher N, Regoutz, Anna, Sallis, Shawn, Zuba, Mateusz J, Rana, Jatinkumar, Tellekamp, M Brooks, Boschker, Jos E, Markurt, Toni
et al (show 11 more authors) (2019) Evidence of a second-order Peierls-driven metal-insulator transition in crystalline NbO2. Physical Review Materials, 3 (7).


Swallow, Jack EN, Palgrave, Robert G, Murgatroyd, Philip AE, Regoutz, Anna, Lorenz, Michael, Hassa, Anna, Grundmann, Marius, von Wenckstern, Holger, Varley, Joel B and Veal, Tim D ORCID: 0000-0002-0610-5626
(2021) Indium Gallium Oxide Alloys: Electronic Structure, Optical Gap, Surface Space Charge, and Chemical Trends within Common-Cation Semiconductors. ACS APPLIED MATERIALS & INTERFACES, 13 (2). pp. 2807-2819.


Swallow, Jack EN, Vorwerk, Christian, Mazzolini, Piero, Vogt, Patrick, Bierwagen, Oliver, Karg, Alexander, Eickhoff, Martin, Schoermann, Joerg, Wagner, Markus R, Roberts, Joseph W
et al (show 14 more authors) (2020) Influence of Polymorphism on the Electronic Structure of Ga<sub>2</sub>O<sub>3</sub>. CHEMISTRY OF MATERIALS, 32 (19). pp. 8460-8470.


Williamson, Benjamin AD, Featherstone, Thomas J, Sathasivam, Sanjayan S, Swallow, Jack EN, Shiel, Huw, Jones, Leanne AH ORCID: 0000-0002-4654-3882, Smiles, Matthew J ORCID: 0000-0003-2530-5647, Regoutz, Anna, Lee, Tien-Lin, Xia, Xueming
et al (show 6 more authors) (2020) Resonant Ta Doping for Enhanced Mobility in Transparent Conducting SnO2. Chemistry of Materials, 32 (5). pp. 1964-1973.


Williamson, Benjamin AD, Featherstone, Thomas J, Sathasivam, Sanjayan S, Swallow, Jack EN, Shiel, Huw, Jones, Leanne AH, Smiles, Matthew J, Regoutz, Anna, Lee, Tien-Lin, Xia, Xueming
et al (show 6 more authors) (2020) Resonant Ta Doping for Enhanced Mobility in Transparent Conducting SnO2. Chemistry of Materials, 32 (5). 1964 - 1973.


Swallow, Jack EN, Williamson, Benjamin AD, Sathasivam, Sanjayan, Birkett, Max ORCID: 0000-0002-6076-6820, Featherstone, Thomas J, Murgatroyd, Philip AE, Edwards, Holly J, Lebens-Higgins, Zachary W, Duncan, David A, Farnworth, Mark
et al (show 10 more authors) (2020) Resonant doping for high mobility transparent conductors: the case of Mo-doped In2O3. Materials Horizons, 7 (1). pp. 236-243.


Ratcliff, Laura E, Oshima, Takayoshi, Nippert, Felix, Janzen, Benjamin M, Kluth, Elias, Goldhahn, Rudiger, Feneberg, Martin, Mazzolini, Piero, Bierwagen, Oliver, Wouters, Charlotte
et al (show 12 more authors) (2022) Tackling Disorder in γ-Ga<sub>2</sub>O<sub>3</sub>. ADVANCED MATERIALS, 34 (37). e2204217-.


Swallow, Jack EN, Williamson, Benjamin AD, Birkett, Max ORCID: 0000-0002-6076-6820, Abbott, Alex, Farnworth, Mark, Featherstone, Thomas J, Peng, Nianhua, Cheetham, Kieran J ORCID: 0000-0002-3534-2049, Warren, Paul, Regoutz, Anna
et al (show 5 more authors) (2018) A hard x-ray photoemission study of transparent conducting fluorine-doped tin dioxide. In: 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC), 2018-6-10 - 2018-6-15, Waikoloa, Hawaii.

This list was generated on Sun Mar 10 06:01:31 2024 GMT.