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Jones, L ORCID: 0000-0002-4654-3882, Gibbon, JT ORCID: 0000-0003-1548-0791, Roberts, JW, Cho, SJ, Thayne, IG, Chalker, PR ORCID: 0000-0002-2295-6332, Dhanak, VR and Mitrovic, IZ ORCID: 0000-0003-4816-8905
(2018) Aluminium doped Ga2O3 for GaN MIS-HEMTs. In: 20th Workshop on Dielectrics in Microelectronics – WODIM 2018, 2018-6-11 - 2018-6-14, Berlin, Germany.


Moloney, J, Tesh, O, Singh, M, Roberts, JW, Jarman, JC, Lee, LC, Huq, TN, Brister, J, Karboyan, S, Kuball, M
et al (show 3 more authors) (2019) Atomic layer deposited α-Ga<sub>2</sub>O<sub>3</sub> solar-blind photodetectors. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 52 (47). p. 475101.


Gibbon, JT ORCID: 0000-0003-1548-0791, Jones, L ORCID: 0000-0002-4654-3882, Roberts, JW, Althobaiti, M, Chalker, PR ORCID: 0000-0002-2295-6332, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905 and Dhanak, VR ORCID: 0000-0001-8053-654X
(2018) Band alignments at Ga2O3 heterojunction interfaces with Si and Ge. AIP Advances, 8 (6). 065011-065011.


Gibbon, JT ORCID: 0000-0003-1548-0791, Jones, L ORCID: 0000-0002-4654-3882, Roberts, JW, Althobaiti, M, Chalker, PR ORCID: 0000-0002-2295-6332, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905 and Dhanak, VR ORCID: 0000-0001-8053-654X
(2018) Band alignments at Ga<sub>2</sub>O<sub>3</sub> heterojunction interfaces with Si and Ge. AIP ADVANCES, 8 (6). 065011-.


Partida-Manzanera, T, Zaidi, ZH, Roberts, JW, Dolmanan, SB, Lee, KB, Houston, PA, Chalker, PR ORCID: 0000-0002-2295-6332, Tripathy, S and Potter, RJ ORCID: 0000-0003-0896-4536
(2019) Comparison of atomic layer deposited Al<sub>2</sub>O<sub>3</sub> and (Ta<sub>2</sub>O<sub>5</sub>)<sub>0.12</sub>(Al<sub>2</sub>O<sub>3</sub>)<sub>0.88</sub> gate dielectrics on the characteristics of GaN-capped AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors. JOURNAL OF APPLIED PHYSICS, 126 (3). 034102-034102.


Zaidi, ZH, Lee, KB, Roberts, JW, Guiney, I, Qian, H, Jiang, S, Cheong, JS, Li, P, Wallis, DJ, Humphreys, CJ
et al (show 2 more authors) (2018) Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs. JOURNAL OF APPLIED PHYSICS, 123 (18). 184503-.


Nicol, D, Oshima, Y, Roberts, JW, Penman, L, Cameron, D, Chalker, PR ORCID: 0000-0002-2295-6332, Martin, RW and Massabuau, FC-P
(2023) Hydrogen-related 3.8 eV UV luminescence in <i>α</i>-Ga<sub>2</sub>O<sub>3</sub>. APPLIED PHYSICS LETTERS, 122 (6). 062102-.


Roberts, JW, Chalker, PR ORCID: 0000-0002-2295-6332, Ding, B, Oliver, RA, Gibbon, JT, Jones, LAH ORCID: 0000-0002-4654-3882, Dhanak, VR, Phillips, LJ ORCID: 0000-0001-5181-1565, Major, JD ORCID: 0000-0002-5554-1985 and Massabuau, FC-P
(2019) Low temperature growth and optical properties of alpha-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition. JOURNAL OF CRYSTAL GROWTH, 528. p. 125254.


Massabuau, Fabien, Roberts, JW, Nicol, D, Edwards, PR, McLelland, M, Dallas, GL, Hunter, DA, Nicolson, EA, Jarman, JC, Kovacs, A
et al (show 3 more authors) (2021) Progress in atomic layer deposited [alpha]-Ga2O3 materials and solar-blind detectors. In: Oxide-based Materials and Devices XII, 2021-3-6 - 2021-3-12.


Roberts, JW, Jarman, JC, Johnstone, DN, Midgley, PA, Chalker, PR ORCID: 0000-0002-2295-6332, Oliver, RA and Massabuau, FC-P
(2018) alpha-Ga2O3 grown by low temperature atomic layer deposition on sapphire. JOURNAL OF CRYSTAL GROWTH, 487. pp. 23-27.

This list was generated on Sat Mar 16 08:10:08 2024 GMT.