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Number of items: 15.


Sandall, Ian ORCID: 0000-0003-3532-0373, Ng, Jo Shien, David, John PR, Tan, Chee Hing, Wang, Ting and Liu, Huiyun
(2012) 1300 nm wavelength InAs quantum dot photodetector grown on silicon. OPTICS EXPRESS, 20 (10). pp. 10446-10452.


Farrow, Thomas, Laumier, Siriny, Sandall, Ian ORCID: 0000-0003-3532-0373 and van Zalinge, Harm ORCID: 0000-0003-0996-1281
(2022) An Aptamer-Functionalised Schottky-Field Effect Transistor for the Detection of Proteins. Biosensors, 12 (5). p. 347.


Laumier, Siriny
(2023) Dielectrophoresis Control of Semiconductor Nanowires for Sensing Technology. PhD thesis, University of Liverpool.


Sedghi, Naser ORCID: 0000-0002-2004-6159, Limniou, Maria ORCID: 0000-0002-6317-4038, Al-Nuiamy, Waleed, Sandall, Ian ORCID: 0000-0003-3532-0373, Al Ataby, Ali and Duret, Denis ORCID: 0000-0003-2940-8977
(2021) Enhancing the engagement of large cohorts using live interactive polling and feedback. Developing Academic Practice, 2021 (Januar). pp. 31-50.


Mumtaz, Asim ORCID: 0000-0002-8982-5206, Milanova, Malina, Sandall, Ian ORCID: 0000-0003-3532-0373, Cheetham, Kieran, Cao, Zhongming, Bilton, Matthew ORCID: 0000-0002-0475-2942, Piana, Giacomo, Fleck, Nicole ORCID: 0000-0001-7800-056X, Phillips, Laurie ORCID: 0000-0001-5181-1565, Hutter, Oliver
et al (show 2 more authors) (2020) GaAsSbN for Multi-Junction Solar Cells. In: 2020 IEEE 47th Photovoltaic Specialists Conference (PVSC), 2020-6-15 - 2020-8-21.


Cao, Zhongming, Hulme, Sorcha, Veal, Tim D ORCID: 0000-0002-0610-5626, Ashwin, Mark J and Sandall, Ian ORCID: 0000-0003-3532-0373
(2022) GaSbBi Metal Semiconductor Metal Detectors for Mid-Infrared Sensing. Frontiers in Electronic Materials, 2.


Cao, Zhongming, Ashwin, Mark ORCID: 0000-0001-8657-8097, Veal, Tim ORCID: 0000-0002-0610-5626, Sandall, Ian ORCID: 0000-0003-3532-0373 and IEEE,
(2020) GaSbBi metal-semiconductor-metal photodetectors for mid-infrared sensing. In: 2020 IEEE Photonics Conference (IPC), 2020-9-28 - 2020-10-1.


McIntosh, David, Al-Nuaimy, Waleed ORCID: 0000-0001-8927-2368, Ataby, Ali Al, Sandall, Ian ORCID: 0000-0003-3532-0373, Selis, Valerio ORCID: 0000-0002-1856-4707 and Allen, Shawnee
(2023) Gamification Approaches for Improving Engagement and Learning in Small and Large Engineering Classes. International Journal of Information and Education Technology, 13 (9). pp. 1328-1337.


Alshammari, Adeem, van Zalinge, Harm ORCID: 0000-0003-0996-1281 and Sandall, Ian ORCID: 0000-0003-3532-0373
(2023) In Situ Monitoring of Aptamer-Protein Binding on a ZnO Surface Using Spectroscopic Ellipsometry. Sensors (Basel, Switzerland), 23 (14). p. 6353.


Cao, Zhongming, Veal, Tim D ORCID: 0000-0002-0610-5626, Ashwin, Mark J ORCID: 0000-0001-8657-8097, Dawson, Karl ORCID: 0000-0003-3249-8328 and Sandall, Ian ORCID: 0000-0003-3532-0373
(2019) Influence of annealing on the electrical characteristic of GaSbBi Schottky diodes. In: UK Semiconductors 2018, 2018-7-3 - 2018-7-4, Sheffield, UK.


Cao, Zhongming
(2021) Novel Semiconductor Materials for Mid-Infrared Optoelectronic Application. Doctor of Philosophy thesis, University of Liverpool.


Sandall, Ian ORCID: 0000-0003-3532-0373, Tan, Chee Hing, Smith, Andrew and Gwilliam, Russell
(2012) Planar InAs photodiodes fabricated using He ion implantation. OPTICS EXPRESS, 20 (8). pp. 8575-8583.


Laumier, Siriny, Farrow, Thomas, van Zalinge, Harm ORCID: 0000-0003-0996-1281, Seravalli, Luca, Bosi, Matteo and Sandall, Ian ORCID: 0000-0003-3532-0373
(2022) Selection and Functionalization of Germanium Nanowires for Bio- Sensing. ACS OMEGA, 7 (39). pp. 35288-35296.


Milanova, Malina, Donchev, Vesselin, Cheetham, Kieran J, Cao, Zhongming, Sandall, Ian ORCID: 0000-0003-3532-0373, Piana, Giacomo M, Hutter, Oliver S, Durose, Ken ORCID: 0000-0003-1183-3211 and Mumtaz, Asim ORCID: 0000-0002-8982-5206
(2020) Single-junction solar cells based on p-i-n GaAsSbN heterostructures grown by liquid phase epitaxy. SOLAR ENERGY, 208. pp. 659-664.


Cao, Zhongming, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905 and Sandall, Ian ORCID: 0000-0003-3532-0373
(2020) Suppression of Surface Leakage Currents in InAs Avalanche Photodiodes via Sputtering of High-<i>k</i> Dielectric Layers. IEEE TRANSACTIONS ON ELECTRON DEVICES, 67 (10). pp. 4269-4273.

This list was generated on Mon Feb 5 19:24:04 2024 GMT.