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Birkett, M 
ORCID: 0000-0002-6076-6820, Savory, CN, Fioretti, AN, Thompson, P ORCID: 0000-0002-9697-6141, Muryn, CA, Weerakkody, AD, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Hall, S ORCID: 0000-0001-8387-1036, Treharne, R, Dhanak, VR et al (show 3 more authors)
(2017)
Atypically small temperature-dependence of the direct band gap in the metastable semiconductor copper nitride Cu3N.
Physical Review B - Condensed Matter and Materials Physics, 95 (11).
Linhart, WM, Rajpalke, MK, Buckeridge, J, Murgatroyd, PAE, Bomphrey, JJ, Alaria, J ORCID: 0000-0001-5868-0318, Catlow, CRA, Scanlon, DO, Ashwin, MJ ORCID: 0000-0001-8657-8097 and Veal, TD ORCID: 0000-0002-0610-5626
(2016)
Band gap reduction in InN<i><sub>x</sub></i>Sb<sub>1-<i>x</i></sub> alloys: Optical absorption, k . P modeling, and density functional theory.
APPLIED PHYSICS LETTERS, 109 (13).
p. 132104.
Phillips, LJ ORCID: 0000-0001-5181-1565, Savory, CN, Hutter, OS ORCID: 0000-0002-8838-8956, Yates, PJ, Shiel, H, Mariotti, S, Bowen, L, Birkett, M ORCID: 0000-0002-6076-6820, Durose, K ORCID: 0000-0003-1183-3211, Scanlon, DO et al (show 1 more authors)
(2019)
Current enhancement via a TiO2 window layer for CSS Sb2Se3 solar cells: performance limits and high Voc.
IEEE Journal of Photovoltaics, 9 (2).
pp. 544-551.
Rajpalke, MK, Linhart, WM, Birkett, M ORCID: 0000-0002-6076-6820, Yu, KM, Scanlon, DO, Buckeridge, J, Jones, TS, Ashwin, MJ ORCID: 0000-0001-8657-8097 and Veal, TD ORCID: 0000-0002-0610-5626
(2013)
Growth and properties of GaSbBi alloys.
APPLIED PHYSICS LETTERS, 103 (14).
p. 142106.
Buckeridge, J, Veal, TD ORCID: 0000-0002-0610-5626, Catlow, CRA and Scanlon, DO
(2019)
Intrinsic point defects and the <i>n</i>- and <i>p</i>-type dopability of the narrow gap semiconductors GaSb and InSb.
PHYSICAL REVIEW B, 100 (3).
Arca, E, Kehoe, AB, Veal, TD ORCID: 0000-0002-0610-5626, Shmeliov, A, Scanlon, DO, Downing, C, Daly, D, Mullarkey, D, Shvets, IV, Nicolosi, V et al (show 1 more authors)
(2017)
Valence band modification of Cr2O3 by Ni-doping: Creating a high figure of merit p-type TCO.
Journal of Materials Chemistry C, 5 (47).
pp. 12610-12618.
Farahani, SK Vasheghani, Veal, TD ORCID: 0000-0002-0610-5626, Mudd, JJ, Scanlon, DO, Watson, GW, Bierwagen, O, White, ME, Speck, JS and McConville, CF
(2014)
Valence-band density of states and surface electron accumulation in epitaxial SnO<sub>2</sub> films.
PHYSICAL REVIEW B, 90 (15).