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Number of items: 1.
Jones, L 
ORCID: 0000-0002-4654-3882, Gibbon, JT ORCID: 0000-0003-1548-0791, Roberts, JW, Cho, SJ, Thayne, IG, Chalker, PR ORCID: 0000-0002-2295-6332, Dhanak, VR and Mitrovic, IZ ORCID: 0000-0003-4816-8905
(2018)
Aluminium doped Ga2O3 for GaN MIS-HEMTs.
In: 20th Workshop on Dielectrics in Microelectronics – WODIM 2018, 2018-6-11 - 2018-6-14, Berlin, Germany.