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Roberts, JW, Chalker, PR 
ORCID: 0000-0002-2295-6332, Lee, KB, Houston, PA, Cho, SJ, Thayne, IG, Guiney, I, Wallis, D and Humphreys, CJ
(2016)
Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectrics.
APPLIED PHYSICS LETTERS, 108 (7).