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Shen, ZJ, Zhao, C, Zhao, CZ, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Yang, L, Xu, WY, Lim, EG
ORCID: 0000-0003-0199-7386, Luo, T, Huang, YB and IEEE,
(2019)
Al/GO/Si/Al RRAM with Solution-processed GO dielectric at Low Fabrication Temperature.
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Zhao, TS, Zhao, C, Zhao, CZ, Xu, WY, Yang, L, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Hall, S
ORCID: 0000-0001-8387-1036, Lim, EG
ORCID: 0000-0003-0199-7386, Yu, SC and IEEE,
(2019)
Eco-Friendly, Low-temperature Solution-processed InO/AlO Thin-film Transistor with Li-incorporation.
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Liu, QH, Zhao, C, Zhao, CZ, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Hall, S
ORCID: 0000-0001-8387-1036, Xu, WY, Yang, L, Lim, EG
ORCID: 0000-0003-0199-7386, Wang, QN, Wei, YL et al (show 2 more authors)
(2019)
Fully Solution-Processed Sodium Doped ZnO Thin-Film Transistors via a Low-Temperature Aqueous Route.
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Qi, YF, Zhao, CZ, Zhao, C, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Xu, WY, Yang, L, Shen, ZJ, He, JH and IEEE,
(2019)
Improved Resistive Switching Behavior in Solution-processed AlOx based RRAM.
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Qi, YF, Shen, ZJ, Zhao, Chun, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Xu, WY, Lim, EG
ORCID: 0000-0003-0199-7386, Yang, L, He, JH, Luo, T, Huang, YB et al (show 1 more authors)
(2020)
Resistive switching behavior of solution-processed AlOx and GO based RRAM at low temperature.
SOLID-STATE ELECTRONICS, 168.