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Supardan, SN, Das, P 
ORCID: 0000-0003-1147-6541, Major, JD ORCID: 0000-0002-5554-1985, Hannah, A, Zaidi, ZH, Mahapatra, R, Lee, KB, Valizadeh, R, Houston, PA, Hall, S ORCID: 0000-0001-8387-1036 et al (show 2 more authors)
(2020)
Band alignments of sputtered dielectrics on GaN.
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 53 (7).
075303-075303.
Partida-Manzanera, T, Zaidi, ZH, Roberts, JW, Dolmanan, SB, Lee, KB, Houston, PA, Chalker, PR ORCID: 0000-0002-2295-6332, Tripathy, S and Potter, RJ ORCID: 0000-0003-0896-4536
(2019)
Comparison of atomic layer deposited Al2O3 and (Ta2O5)(0.12)(Al2O3)(0.88) gate dielectrics on the characteristics of GaN-capped AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors.
JOURNAL OF APPLIED PHYSICS, 126 (3).
034102-034102.
Zaidi, ZH, Lee, KB, Roberts, JW, Guiney, I, Qian, H, Jiang, S, Cheong, JS, Li, P, Wallis, DJ, Humphreys, CJ et al (show 2 more authors)
(2018)
Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs.
JOURNAL OF APPLIED PHYSICS, 123 (18).
p. 184503.