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Number of items: 16.


Liu, Qihan, Yin, Li, Zhao, Chun, Wu, Ziang, Wang, Jingyi, Yu, Xiaoran, Wang, Zixin, Wei, Wenxi, Liu, Yina, Mitrovic, Ivona Z
et al (show 3 more authors) (2022) All-in-one metal-oxide heterojunction artificial synapses for visual sensory and neuromorphic computing systems. NANO ENERGY, 97.


Shen, Zongjie, Zhao, Chun, Zhao, Tianshi, Xu, Wangying, Liu, Yina, Qi, Yanfei, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Yang, Li ORCID: 0000-0002-1040-4223 and Zhao, Ce Zhou
(2021) Artificial Synaptic Performance with Learning Behavior for Memristor Fabricated with Stacked Solution-Processed Switching Layers. ACS Applied Electronic Materials, 3 (3). 1288 - 1300.


Zhao, Tianshi, Zhao, Chun, Xu, Wangying, Liu, Yina, Gao, Hao, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Lim, Eng Gee ORCID: 0000-0003-0199-7386, Yang, Li and Zhao, Ce Zhou
(2021) Bio-Inspired Photoelectric Artificial Synapse based on Two-Dimensional Ti3C2Tx MXenes Floating Gate. ADVANCED FUNCTIONAL MATERIALS, 31 (45).


Liu, Qihan, Zhao, Chun, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Xu, Wangying, Yang, Li and Zhao, Ce Zhou
(2020) Comproportionation Reaction Synthesis to Realize High‐Performance Water‐Induced Metal‐Oxide Thin‐Film Transistors. Advanced Electronic Materials. 2000072 - 2000072.


Liu, Qihan, Zhao, Chun, Zhao, Tianshi, Liu, Yina, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Xu, Wangying, Yang, Li ORCID: 0000-0002-1040-4223 and Zhao, Ce Zhou
(2021) Ecofriendly Solution-Combustion-Processed Thin-Film Transistors for Synaptic Emulation and Neuromorphic Computing. ACS applied materials & interfaces.


Wu, Jingjin, Zhao, Yinchao, Zhao, Ce Zhou, Yang, Li, Lu, Qifeng, Zhang, Qian, Smith, Jeremy ORCID: 0000-0002-0212-2365 and Zhao, Yongming
(2016) Effects of Rapid Thermal Annealing on the Structural, Electrical, and Optical Properties of Zr-Doped ZnO Thin Films Grown by Atomic Layer Deposition. MATERIALS, 9 (8).


Lu, Qifeng, Mu, Yifei, Roberts, Joseph W, Althobaiti, Mohammed, Dhanak, Vinod R, Wu, Jingjin, Zhao, Chun, Zhao, Ce Zhou, Zhang, Qian, Yang, Li
et al (show 3 more authors) (2015) Electrical Properties and Interfacial Studies of HfxTi1-xO2 High Permittivity Gate Insulators Deposited on Germanium Substrates. MATERIALS, 8 (12). 8169 - 8182.


Zhao, Tianshi, Zhao, Chun, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Gee Lim, Eng, Yang, Li, Qiu, Chenghu and Zhao, Ce Zhou
(2020) Facile Route for Low-temperature Eco-friendly Solution Processed ZnSnO Thin-film Transistors. In: 2020 IEEE International Reliability Physics Symposium (IRPS), 2020-04-28 - 2020-05-30.


Zhao, Tianshi, Liu, Chenguang, Zhao, Chun, Xu, Wangying, Liu, Yina, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Lim, Eng Gee, Yang, Li ORCID: 0000-0002-1040-4223 and Zhao, Ce Zhou
(2021) High-performance solution-processed Ti3C2Tx MXene doped ZnSnO thin-film transistors via the formation of a two-dimensional electron gas. JOURNAL OF MATERIALS CHEMISTRY A, 9 (32). 17390 - 17399.


Lu, Qifeng, Zhao, Ce Zhou, Zhao, Chun, Taylor, Steve and Chalker, Paul R ORCID: 0000-0002-2295-6332
(2017) Investigation of Anomalous Capacitance-Voltage Behavior Caused by Interface Dipoles and the Effect of Post-Metal-Annealing. .


Mu, Yifei, Zhao, Ce Zhou, Qi, Yanfei, Lam, Sang, Zhao, Chun, Lu, Qifeng, Cai, Yutao, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Taylor, Stephen ORCID: 0000-0002-2144-8459 and Chalker, Paul R ORCID: 0000-0002-2295-6332
(2016) Real-time and on-site gamma-ray radiation response testing system for semiconductor devices and its applications. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 372. 14 - 28.


Zhao, Chun, Zhao, Tianshi, Shen, Zongjie, Cao, Yixin, Liu, Yina, Yang, Li ORCID: 0000-0002-1040-4223, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Gee Lim, Eng and Zhao, Ce Zhou
(2021) Research on Two-dimensional MXenes Based Synaptic Devices for the Future In-memory Computing. In: 2021 IEEE 14th International Conference on ASIC (ASICON), 2021-10-26 - 2021-10-29.


Qi, YF, Shen, ZJ, Zhao, Chun, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Xu, WY, Lim, EG ORCID: 0000-0003-0199-7386, Yang, L, He, JH, Luo, T, Huang, YB
et al (show 1 more authors) (2020) Resistive switching behavior of solution-processed AlOx and GO based RRAM at low temperature. SOLID-STATE ELECTRONICS, 168.


Mu, Yifei, Fang, Yuxiao, Zhao, Ce Zhou, Zhao, Chun, Lu, Qifeng, Qi, Yanfei, Yi, Ruowei, Yang, Li, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Taylor, Stephen ORCID: 0000-0002-2144-8459
et al (show 1 more authors) (2017) Total Dose Effects and Bias Instabilities of (NH4)(2)S Passivated Ge MOS Capacitors With HfxZr1-xOy Thin Films. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 64 (12). 2913 - 2921.


Mu, Yifei, Zhao, Ce Zhou, Lu, Qifeng, Zhao, Chun, Qi, Yanfei, Lam, Sang, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Taylor, Stephen ORCID: 0000-0002-2144-8459 and Chalker, Paul R ORCID: 0000-0002-2295-6332
(2017) Total Ionizing Dose Response of Hafnium-Oxide Based MOS Devices to Low-Dose-Rate Gamma Ray Radiation Observed by Pulse CV and On-Site Measurements. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 64 (1). 673 - 682.


Wang, Haibin, Zhao, Chun, Yin, Li, Li, Xinjian, Tu, Xin ORCID: 0000-0002-6376-0897, Lim, Eng Gee, Liu, Yina and Zhao, Ce Zhou
(2021) as electron transport layer for high performance solution-processed perovskite solar cells. APPLIED SURFACE SCIENCE, 563.

This list was generated on Sat Aug 6 06:22:10 2022 BST.