![]() | Up a level |
Liu, Qihan, Yin, Li, Zhao, Chun, Wu, Ziang, Wang, Jingyi, Yu, Xiaoran, Wang, Zixin, Wei, Wenxi, Liu, Yina, Mitrovic, Ivona Z et al (show 3 more authors)
(2022)
All-in-one metal-oxide heterojunction artificial synapses for visual sensory and neuromorphic computing systems.
NANO ENERGY, 97.
Shen, Zongjie, Zhao, Chun, Zhao, Tianshi, Xu, Wangying, Liu, Yina, Qi, Yanfei, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Yang, Li
ORCID: 0000-0002-1040-4223 and Zhao, Ce Zhou
(2021)
Artificial Synaptic Performance with Learning Behavior for Memristor Fabricated with Stacked Solution-Processed Switching Layers.
ACS Applied Electronic Materials, 3 (3).
1288 - 1300.
Zhao, Tianshi, Zhao, Chun, Xu, Wangying, Liu, Yina, Gao, Hao, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Lim, Eng Gee
ORCID: 0000-0003-0199-7386, Yang, Li and Zhao, Ce Zhou
(2021)
Bio-Inspired Photoelectric Artificial Synapse based on Two-Dimensional Ti3C2Tx MXenes Floating Gate.
ADVANCED FUNCTIONAL MATERIALS, 31 (45).
Liu, Qihan, Zhao, Chun, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Xu, Wangying, Yang, Li and Zhao, Ce Zhou
(2020)
Comproportionation Reaction Synthesis to Realize High‐Performance Water‐Induced Metal‐Oxide Thin‐Film Transistors.
Advanced Electronic Materials.
2000072 - 2000072.
Liu, Qihan, Zhao, Chun, Zhao, Tianshi, Liu, Yina, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Xu, Wangying, Yang, Li
ORCID: 0000-0002-1040-4223 and Zhao, Ce Zhou
(2021)
Ecofriendly Solution-Combustion-Processed Thin-Film Transistors for Synaptic Emulation and Neuromorphic Computing.
ACS applied materials & interfaces.
Wu, Jingjin, Zhao, Yinchao, Zhao, Ce Zhou, Yang, Li, Lu, Qifeng, Zhang, Qian, Smith, Jeremy ORCID: 0000-0002-0212-2365 and Zhao, Yongming
(2016)
Effects of Rapid Thermal Annealing on the Structural, Electrical, and Optical Properties of Zr-Doped ZnO Thin Films Grown by Atomic Layer Deposition.
MATERIALS, 9 (8).
Lu, Qifeng, Mu, Yifei, Roberts, Joseph W, Althobaiti, Mohammed, Dhanak, Vinod R, Wu, Jingjin, Zhao, Chun, Zhao, Ce Zhou, Zhang, Qian, Yang, Li et al (show 3 more authors)
(2015)
Electrical Properties and Interfacial Studies of HfxTi1-xO2 High Permittivity Gate Insulators Deposited on Germanium Substrates.
MATERIALS, 8 (12).
8169 - 8182.
Zhao, Tianshi, Zhao, Chun, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Gee Lim, Eng, Yang, Li, Qiu, Chenghu and Zhao, Ce Zhou
(2020)
Facile Route for Low-temperature Eco-friendly Solution Processed ZnSnO Thin-film Transistors.
In: 2020 IEEE International Reliability Physics Symposium (IRPS), 2020-04-28 - 2020-05-30.
Zhao, Tianshi, Liu, Chenguang, Zhao, Chun, Xu, Wangying, Liu, Yina, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Lim, Eng Gee, Yang, Li
ORCID: 0000-0002-1040-4223 and Zhao, Ce Zhou
(2021)
High-performance solution-processed Ti3C2Tx MXene doped ZnSnO thin-film transistors via the formation of a two-dimensional electron gas.
JOURNAL OF MATERIALS CHEMISTRY A, 9 (32).
17390 - 17399.
Lu, Qifeng, Zhao, Ce Zhou, Zhao, Chun, Taylor, Steve and Chalker, Paul R ORCID: 0000-0002-2295-6332
(2017)
Investigation of Anomalous Capacitance-Voltage Behavior Caused by Interface Dipoles and the Effect of Post-Metal-Annealing.
.
Mu, Yifei, Zhao, Ce Zhou, Qi, Yanfei, Lam, Sang, Zhao, Chun, Lu, Qifeng, Cai, Yutao, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Taylor, Stephen
ORCID: 0000-0002-2144-8459 and Chalker, Paul R
ORCID: 0000-0002-2295-6332
(2016)
Real-time and on-site gamma-ray radiation response testing system for semiconductor devices and its applications.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 372.
14 - 28.
Zhao, Chun, Zhao, Tianshi, Shen, Zongjie, Cao, Yixin, Liu, Yina, Yang, Li ORCID: 0000-0002-1040-4223, Mitrovic, Ivona Z
ORCID: 0000-0003-4816-8905, Gee Lim, Eng and Zhao, Ce Zhou
(2021)
Research on Two-dimensional MXenes Based Synaptic Devices for the Future In-memory Computing.
In: 2021 IEEE 14th International Conference on ASIC (ASICON), 2021-10-26 - 2021-10-29.
Qi, YF, Shen, ZJ, Zhao, Chun, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Xu, WY, Lim, EG
ORCID: 0000-0003-0199-7386, Yang, L, He, JH, Luo, T, Huang, YB et al (show 1 more authors)
(2020)
Resistive switching behavior of solution-processed AlOx and GO based RRAM at low temperature.
SOLID-STATE ELECTRONICS, 168.
Mu, Yifei, Fang, Yuxiao, Zhao, Ce Zhou, Zhao, Chun, Lu, Qifeng, Qi, Yanfei, Yi, Ruowei, Yang, Li, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Taylor, Stephen
ORCID: 0000-0002-2144-8459 et al (show 1 more authors)
(2017)
Total Dose Effects and Bias Instabilities of (NH4)(2)S Passivated Ge MOS Capacitors With HfxZr1-xOy Thin Films.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 64 (12).
2913 - 2921.
Mu, Yifei, Zhao, Ce Zhou, Lu, Qifeng, Zhao, Chun, Qi, Yanfei, Lam, Sang, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Taylor, Stephen
ORCID: 0000-0002-2144-8459 and Chalker, Paul R
ORCID: 0000-0002-2295-6332
(2017)
Total Ionizing Dose Response of Hafnium-Oxide Based MOS Devices to Low-Dose-Rate Gamma Ray Radiation Observed by Pulse CV and On-Site Measurements.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 64 (1).
673 - 682.
Wang, Haibin, Zhao, Chun, Yin, Li, Li, Xinjian, Tu, Xin ORCID: 0000-0002-6376-0897, Lim, Eng Gee, Liu, Yina and Zhao, Ce Zhou
(2021)
as electron transport layer for high performance solution-processed perovskite solar cells.
APPLIED SURFACE SCIENCE, 563.