Low ON-State Resistance Normally-OFF AlGaN/GaN MIS-HEMTs With Partially Recessed Gate and ZrOx Charge Trapping Layer

Cai, Yutao, Zhang, Yuanlei, Liang, Ye, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Wen, Huiqing, Liu, Wen and Zhao, Cezhou (2021) Low ON-State Resistance Normally-OFF AlGaN/GaN MIS-HEMTs With Partially Recessed Gate and ZrOx Charge Trapping Layer. IEEE TRANSACTIONS ON ELECTRON DEVICES, 68 (9). pp. 4310-4316.

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Official URL: http://dx.doi.org/10.1109/ted.2021.3100002

Abstract

Novel normally-OFF AlGaN/GaN MIS-high electron mobility transistors (HEMTs) with a ZrOx charge trapping layer are proposed. The deposition of the ZrOx charge trapping layer on the partially recessed AlGaN in conjunction with the Al2O3 gate dielectric has been accomplished. The developed MIS-HEMTs exhibit a threshold voltage of 1.55 ± 0.4 V and a maximum drain current of 730 ± 6 mA/mm, while associated low ON-resistance of 7.1 ± 0.2 Ω mm, for a gate to drain separation of 3 μm. The TCAD simulation results are presented to explore the charge trapping and de-trapping behaviors. Moreover, the devices exhibit a high breakdown voltage. The results indicate the merits of employing ZrOx charge trapping layer to realize the normally-OFF GaN devices with low ON-state resistance.

Item Type:	Article
Uncontrolled Keywords:	AlGaN/GaN, breakdown voltage, MIS-high electron mobility transistors (HEMTs), normally-OFF, ON-resistance, ZrOx
Divisions:	Faculty of Science and Engineering > School of Electrical Engineering, Electronics and Computer Science Faculty of Science and Engineering > School of Physical Sciences
Depositing User:	Symplectic Admin
Date Deposited:	31 Jan 2022 08:21
Last Modified:	15 Mar 2024 03:07
DOI:	10.1109/TED.2021.3100002
Related URLs:	Author Publisher
URI:	https://livrepository.liverpool.ac.uk/id/eprint/3147816