Characterisation of analogue front end and time walk in CMOS active pixel sensor



Hiti, B, Cindro, V, Gorisek, A, Franks, M, Marco-Hernandez, R, Kramberger, G, Mandic, I, Mikuz, M, Powell, S, Steininger, H
et al (show 3 more authors) (2021) Characterisation of analogue front end and time walk in CMOS active pixel sensor. JOURNAL OF INSTRUMENTATION, 16 (12). P12020-P12020.

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Abstract

In this work we investigated a method to determine time walk in an active silicon pixel sensor prototype using Edge-TCT with infrared laser charge injection. Samples were investigated before and after neutron irradiation to 5e14 neq/cm2. Threshold, noise and calibration of the analogue front end were determined with external charge injection. A spatially sensitive measurement of collected charge and time walk was carried out with Edge-TCT, showing a uniform charge collection and output delay in pixel centre. On pixel edges charge sharing was observed due to finite beam width resulting in smaller signals and larger output delay. Time walk below 25 ns was observed for charge above 2000 electrons at a threshold above the noise level. Time walk measurement with external charge injection yielded identical results.

Item Type: Article
Uncontrolled Keywords: Charge induction, Radiation-hard detectors, Solid state detectors
Divisions: Faculty of Science and Engineering > School of Physical Sciences
Depositing User: Symplectic Admin
Date Deposited: 09 Mar 2022 11:01
Last Modified: 18 Jan 2023 21:11
DOI: 10.1088/1748-0221/16/12/P12020
Related URLs:
URI: https://livrepository.liverpool.ac.uk/id/eprint/3150385