A monolithic GaN driver with a deadtime generator (DTG) for high‐temperature (HT) GaN DC‐DC buck converters


Cui, Miao, Zhu, Yuhao, Cao, Pingyu, Li, Ang ORCID: 0000-0002-1872-5005, Bu, Qinglei, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Su, Xujun, Zhao, Yinchao, Wen, Huiqing, Liu, Wen et al (show 1 more authors) (2023) A monolithic GaN driver with a deadtime generator (DTG) for high‐temperature (HT) GaN DC‐DC buck converters. IET Power Electronics, 16 (9). pp. 1582-1594.

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Abstract

<jats:title>Abstract</jats:title><jats:p>This paper presents a monolithic GaN driver with a deadtime generator (DTG) for half‐bridge DC‐DC buck converters. The proposed GaN integrated circuits (ICs) were fabricated in a 3 µm enhancement‐mode GaN MIS‐HEMTs process. The integrated DTG converter can operate at 250°C with a large gate swing of 10 V, and it exhibits a maximum efficiency of 80% at high temperatures, with <jats:italic>V<jats:sub>IN</jats:sub></jats:italic>= 30 V at 100 kHz. The monolithic GaN DTG driver requires one control signal and generates a deadtime of fewer than 0.13 µs at high temperatures up to 250°C. The proposed DTG converter is compared to an integrated GaN converter without DTG (w/o) under various conditions. At high temperatures, the optimized GaN DTG converter shows better performance than the GaN converter w/o at high load currents, in terms of smaller voltage overshoots and better efficiency as well. This work demonstrates a simple GaN deadtime method for high temperature (HT) GaN power converters.</jats:p>

Item Type: Article
Uncontrolled Keywords: DC-DC power convertors, MOS integrated circuits, wide band gap semiconductors
Divisions: Faculty of Science and Engineering > School of Electrical Engineering, Electronics and Computer Science
Depositing User: Symplectic Admin
Date Deposited: 16 May 2023 09:39
Last Modified: 30 Aug 2023 22:54
DOI: 10.1049/pel2.12498
Related URLs:
URI: https://livrepository.liverpool.ac.uk/id/eprint/3170396
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