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Sandall, IC 
ORCID: 0000-0003-3532-0373, Bastiman, F, White, B, Richards, R, Mendes, D, David, JPR and Tan, CH
(2014)
Demonstration of InAsBi photoresponse beyond 3.5 μm.
Applied Physics Letters, 104 (17).
171109-.
Sandall, IC ORCID: 0000-0003-3532-0373, Ng, JS, David, JPR, Liu, H and Tan, CH
(2013)
Evaluation of InAs quantum dots on Si as optical modulator.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 28 (9).
094002-094002.
Velichko, AV, Patane, A, Capizzi, M, Sandall, IC ORCID: 0000-0003-3532-0373, Giubertoni, D, Makarovsky, O, Polimeni, A, Krier, A, Zhuang, Q and Tan, CH
(2015)
H-tailored surface conductivity in narrow band gap In(AsN).
APPLIED PHYSICS LETTERS, 106 (2).
022111-.
White, BS, Sandall, IC ORCID: 0000-0003-3532-0373, Zhou, X, Krysa, A, McEwan, K, David, JPR and Tan, CH
(2016)
High-Gain InAs Planar Avalanche Photodiodes.
JOURNAL OF LIGHTWAVE TECHNOLOGY, 34 (11).
pp. 2639-2644.
Segercrantz, N, Slotte, J, Makonnen, I, Tuomisto, F, Sandall, IC ORCID: 0000-0003-3532-0373, Ashwin, MJ ORCID: 0000-0001-8657-8097 and Veal, TD ORCID: 0000-0002-0610-5626
(2017)
Hole density and acceptor-type defects in MBE-grown GaSb1-x Bi x.
Journal of Physics D: Applied Physics, 50 (29).
Sandall, IC ORCID: 0000-0003-3532-0373, Porter, NE, Wagner, M, Schneider, H, Winnerl, S, Helm, M and Wilson, L
(2010)
Terahertz optical sideband emission in self-assembled quantum dots.
APPLIED PHYSICS LETTERS, 96 (20).
201105-.