Atomic layer deposition of Nb-doped ZnO for thin film transistors



Shaw, A, Wrench, JS, Jin, JD, Whittles, TJ ORCID: 0000-0002-5154-7511, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Raja, M, Dhanak, VR, Chalker, PR ORCID: 0000-0002-2295-6332 and Hall, S ORCID: 0000-0001-8387-1036
(2016) Atomic layer deposition of Nb-doped ZnO for thin film transistors. APPLIED PHYSICS LETTERS, 109 (22).

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Shaw et al APL 2016x.pdf - Accepted Version

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Item Type: Article
Depositing User: Symplectic Admin
Date Deposited: 18 Oct 2016 10:57
Last Modified: 08 Jan 2021 12:42
DOI: 10.1063/1.4968194
Related URLs:
URI: https://livrepository.liverpool.ac.uk/id/eprint/3003799