Influence of annealing on the electrical characteristic of GaSbBi Schottky diodes

Cao, Zhongming, Veal, Tim D ORCID: 0000-0002-0610-5626, Ashwin, Mark J ORCID: 0000-0001-8657-8097, Dawson, Karl ORCID: 0000-0003-3249-8328 and Sandall, Ian ORCID: 0000-0003-3532-0373 (2019) Influence of annealing on the electrical characteristic of GaSbBi Schottky diodes. In: UK Semiconductors 2018, 2018-7-3 - 2018-7-4, Sheffield, UK.

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Abstract

<jats:p>The influence of postgrowth thermal annealing on GaSbBi Schottky barrier diodes has been investigated. The effects of the annealing temperature and time on the material quality and electrical characteristics of the diodes have been studied. The I-V characteristics indicated a better ideality factor and less leakage current at the reverse bias, as the annealing temperature increased up to 500 °C for a duration of 30 min. X-ray diffraction and scanning transmission electron microscope measurements were performed to verify that the bismuth composition was unaffected during the annealing process. Energy dispersive x-ray analysis indicated that Sb clustering occurs at high annealing temperatures, resulting in a concomitant degradation in the electrical performance. The optimum electrical characteristics of the diode were obtained with an annealing temperature of 500 °C for 30 min, resulting in an ideality factor of 1.3 being achieved.</jats:p>

Item Type:	Conference or Workshop Item (Unspecified)
Depositing User:	Symplectic Admin
Date Deposited:	27 Jun 2018 10:25
Last Modified:	15 Mar 2024 03:06
DOI:	10.1063/1.5108870
Related URLs:	Author Publisher
URI:	https://livrepository.liverpool.ac.uk/id/eprint/3023052