Characterization of Transient Threshold Voltage Shifts in Enhancement- and Depletion-mode AlGaN/GaN Metal-Insulator-Semiconductor (MIS)-HEMTs


Cui, Miao, Cai, Yutao, Lam, Sang, Liu, Wen, Zhao, Chun, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Taylor, Stephen ORCID: 0000-0002-2144-8459, Chalker, Paul R ORCID: 0000-0002-2295-6332 and Zhao, Cezhou (2018) Characterization of Transient Threshold Voltage Shifts in Enhancement- and Depletion-mode AlGaN/GaN Metal-Insulator-Semiconductor (MIS)-HEMTs. In: 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC), 2018-06-06 - 2018-06-08.

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Item Type: Conference or Workshop Item (Unspecified)
Depositing User: Symplectic Admin
Date Deposited: 15 Feb 2019 09:36
Last Modified: 01 Sep 2022 08:26
DOI: 10.1109/edssc.2018.8487160
URI: https://livrepository.liverpool.ac.uk/id/eprint/3032861
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