Cui, Miao, Cai, Yutao, Lam, Sang, Liu, Wen, Zhao, Chun, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Taylor, Stephen
ORCID: 0000-0002-2144-8459, Chalker, Paul R
ORCID: 0000-0002-2295-6332 and Zhao, Cezhou
(2018)
Characterization of Transient Threshold Voltage Shifts in Enhancement- and Depletion-mode AlGaN/GaN Metal-Insulator-Semiconductor (MIS)-HEMTs.
In: 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC), 2018-06-06 - 2018-06-08.
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IEEE-EDSSC-2018.pdf - Accepted Version Download (562kB) |
Item Type: | Conference or Workshop Item (Unspecified) |
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Depositing User: | Symplectic Admin |
Date Deposited: | 15 Feb 2019 09:36 |
Last Modified: | 09 Jan 2021 09:48 |
DOI: | 10.1109/edssc.2018.8487160 |
URI: | https://livrepository.liverpool.ac.uk/id/eprint/3032861 |
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