Effect of High-k Passivation Layer on High Voltage Properties of GaN Metal-Insulator-Semiconductor Devices



Cai, Yutao, Wang, Yang, Liang, Ye, Zhang, Yuanlei, Liu, Wen, Wen, Huiqing, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905 and Zhao, Cezhou
(2020) Effect of High-k Passivation Layer on High Voltage Properties of GaN Metal-Insulator-Semiconductor Devices. IEEE Access, 8. 95642 - 95649.

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Item Type: Article
Depositing User: Symplectic Admin
Date Deposited: 03 Jun 2020 08:58
Last Modified: 17 Jun 2021 11:52
DOI: 10.1109/access.2020.2995906
URI: https://livrepository.liverpool.ac.uk/id/eprint/3089318