Applicability of Sc2O3 versus Al2O3 in MIM rectifiers for IR rectenna

Almalki, S, Tekin, SB, Sedghi, N ORCID: 0000-0002-2004-6159, Hall, S ORCID: 0000-0001-8387-1036 and Mitrovic, IZ ORCID: 0000-0003-4816-8905
(2021) Applicability of Sc2O3 versus Al2O3 in MIM rectifiers for IR rectenna. SOLID-STATE ELECTRONICS, 184. p. 108082.

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Impedance matching between the terahertz antenna and ultra-fast Metal-Insulator-Metal (MIM) diode is a crucial issue in realizing rectenna technology for harvesting infrared (IR) energy spectrum. In this paper, scandium oxide (Sc2O3)-based MIM diodes were fabricated using magnetron sputtering and their rectification performance compared to state-of-the-art Au/Al2O3/Au diodes. The fabricated Al/Sc2O3/Al diode has exhibited around two orders of magnitude lower zero-bias dynamic resistance (RD0 = 956 kΩ) and high zero-bias responsivity (β0 = 1 A/W) in advance to Au/Al2O3/Au diode. The results point to applicability of scandium oxide in MIM rectifiers for IR rectenna.

Item Type: Article
Uncontrolled Keywords: Dielectric, Rectifier, Rectenna, Sc2O3, Al2O3
Divisions: Faculty of Science and Engineering > School of Electrical Engineering, Electronics and Computer Science
Depositing User: Symplectic Admin
Date Deposited: 01 Jun 2021 14:22
Last Modified: 18 Jan 2023 22:37
DOI: 10.1016/j.sse.2021.108082
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